Results 81 to 90 of about 606,110 (277)

Large‐Area 2D Metasurface‐Based Triboelectric E‐Skin Arrays: Contact & Proximity Tactile Mapping with Broadband Acoustic Readouts

Advanced Materials, EarlyView.
Metasurface‐engineered NC‐TENG arrays integrate tactile pressure mapping, non‐contact gesture sensing, and acoustic signal readouts in one ultrathin module, and outperforms pristine PDMS in terms of electrical output and real‐time spatial mapping for next‐gen wearables.
Injamamul Arief, Swagato Sarkar, Anik Kumar Ghosh, Osvalds Verners, Kamal Kumar Meena, Su‐Hyeong Lee, Soosang Chae, Tobias A. F. König, Beate Krause, Andreas Fery, Mehmet Sait Özer, Anindya Nag, Amit Das   +12 more
wiley   +1 more source

Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si

, 2014
We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5Ge3C0.8/Al2O3/n^{+}-Ge tunneling contacts for spin injection and detection.
Chang, Li-Te, Chiussi, Stefano, Fischer, Inga Anita, Reiter, Sebastian, Rolseth, Erlend, Schulze, Jörg, Stefanov, Stefan, Sürgers, Christoph, Tang, Jianshi, Wang, Kang L.   +9 more
core   +1 more source

Wearable and Implantable Devices for Continuous Monitoring of Muscle Physiological Activity: A Review

Advanced Science, EarlyView.
Recent advances in materials and device engineering enable continuous, real‐time monitoring of muscle activity via wearable and implantable systems. This review critically summarizes emerging technologies for tracking electrophysiological, biomechanical, and oxygenation signals, outlines fundamental principles, and highlights key challenges and ...
Zhengwei Liao, Ata Golparvar, Mohammad Javad Bathaei, Filipe Arroyo Cardoso, Clementine M. Boutry   +4 more
wiley   +1 more source

V-Shaped InAs/Al0.5Ga0.5Sb Vertical Tunnel FET on GaAs (001) Substrate With I $_{\text {ON}}=\text {433}\,\,\mu$ A. $\mu$ m $^{-\text {1}}$ at V $_{\text {DS}}= \text {0.5}$ V

IEEE Journal of the Electron Devices Society, 2017
We report on the fabrication of a near broken InAs/Al0.5Ga0.5Sb vertical TUNNEL field effect transistor (TFET). The epitaxial structure is grown on a GaAs (001) substrate thanks to large mismatch accommodation at the GaSb/GaAs interface.
Vinay Kumar Chinni, Mohammed Zaknoune, Christophe Coinon, Laurence Morgenroth, David Troadec, Xavier Wallart, Ludovic Desplanque   +6 more
doaj   +1 more source

Improvement of the poly-3-hexylthiophene transistor performance using small molecule contact functionalization

, 2009
We demonstrate an approach to improve poly-3-hexylthiophene field effect transistors by modifying the gold contacts with monolayer thick pentacenequinone (PQ) or naphthalene (NL). The effective contact resistance is reduced by a factor of two and sixteen
Deibel, Carsten, Hammer, Maria S, Pflaum, Jens, Winter, Rebecca   +3 more
core   +1 more source

Heterosynaptic Memtransistors Based on Switching Operation Mechanism Using Designed Organic/Inorganic Heterostructures for Neuromorphic Electronics

Advanced Science, EarlyView.
Heteroysynaptic memtransistors are fabricated using a combination of π‐conjugated organic semiconductor TCTA and TMDC MoS2 heterostructure with bottom‐contact architecture. Non‐volatile heterosynaptic and homosynaptic functions such as long‐term plasticity and spike‐timing‐dependent plasticity are emulated by drain and gate pulses based on conduction ...
Taek Joon Kim, Hye Lim Jeong, Sang Wook Song, Dayeong Kwon, Sang‐hun Lee, Jinsoo Joo   +5 more
wiley   +1 more source

Nanotransistor-based gas sensing with record-high sensitivity enabled by electron trapping effect in nanoparticles

Nature Communications
Highly sensitive, low-power, and chip-scale H2 gas sensors are of great interest to both academia and industry. Field-effect transistors (FETs) functionalized with Pd nanoparticles (PdNPs) have recently emerged as promising candidates for such H2 sensors.
Qitao Hu, Paul Solomon, Lars Österlund, Zhen Zhang   +3 more
doaj   +1 more source

Decoding Trap States in Working 2D Perovskite Multi‐Functional Devices

Advanced Science, EarlyView.
Illustration of the photoluminescence spectrum and energy‐level landscape governing trap‐mediated carrier dynamics in 2D F‐PEAI photodetectors. A novel approach capturing dynamic trap occupation and retrapping in devices under operating conditions, directly links defect energetics to carrier transport and enhanced photoresponse in multifunctional ...
Ioannis Leontis, Karl Jonas Riisnaes, Hoi Tung Lam, Rosanna Mastria, Luisa De Marco, Annalisa Coriolano, Steven Hepplestone, Monica Felicia Craciun, Saverio Russo   +8 more
wiley   +1 more source

Thermionic emission-dominated sub-60 mV dec−1 operation in BSb/CNT van der Waals heterostructure transistors

New Journal of Physics
The continuous scaling of metal–oxide–semiconductor field-effect transistors (MOSFETs) is fundamentally limited by short-channel effects and the Boltzmann tyranny, which imposes a minimum subthreshold swing (SS) of 60 mV dec ^−1 at room temperature.
Kai Shi, Shuai Lang, Shun Song, Shaoqiang Guo, Haishan Zhang, Juan Lyu, Jian Gong   +6 more
doaj   +1 more source

Low temperature field-effect in crystalline organic material

, 2004
Molecular organic materials offer the promise of novel electronic devices but also present challenges for understanding charge transport in narrow band systems. Low temperature studies elucidate fundamental transport processes.
A. F. Ioffe, A. P. Ramirez, I. H. Campbell, J. C. Lashley, V. Y. Butko   +4 more
core   +1 more source