Results 171 to 180 of about 1,247 (195)
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The future of ferroelectric field-effect transistor technology
Nature Electronics, 2020Asif Khan, Ali Keshavarzi, Suman Datta
exaly
Journal of nanoscience and nanotechnology
In this paper, we propose a new type of nonvolatile memory (NVM) device based on a tunnel field-effect transistor (TFETs) with Ferroelectric HfO₂ sidewall. By simply utilizing the ferroelectricity of orthorhombic HfO₂ and conventional sidewall spacer technique, TFET can operate as a NVM device.
Ryoongbin, Lee +5 more
openaire +1 more source
In this paper, we propose a new type of nonvolatile memory (NVM) device based on a tunnel field-effect transistor (TFETs) with Ferroelectric HfO₂ sidewall. By simply utilizing the ferroelectricity of orthorhombic HfO₂ and conventional sidewall spacer technique, TFET can operate as a NVM device.
Ryoongbin, Lee +5 more
openaire +1 more source
2D materials for quantum information science
Nature Reviews Materials, 2019Xiaolong Liu, Mark C Hersam
exaly
Tunnel field-effect transistors as energy-efficient electronic switches
Nature, 2011, Heike Riel
exaly
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
Nature Nanotechnology, 2008Simone Pisana, Andre Geim, Ajay K Sood
exaly
Heterojunction Tunnel Field-Effect Transistors (TFETs) and Applications
Asif Rasool +3 moreopenaire +1 more source
Exploring Tunnel Field Effect Transistors (TFETs) as Label-Free Biosensors
Basudha Dewan, Kamal Kishor Choureopenaire +1 more source
Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, 2014
Y. Kondo +8 more
openaire +1 more source
Y. Kondo +8 more
openaire +1 more source