Results 131 to 140 of about 1,247 (194)

An ultra energy-efficient hardware platform for neuromorphic computing enabled by 2D-TMD tunnel-FETs. [PDF]

Nat Commun
Pal A, Chai Z, Jiang J, Cao W, Davies M, De V, Banerjee K.   +6 more
europepmc   +1 more source

Fringe-fields-modulated double-gate tunnel-FET biosensor. [PDF]

Sci Rep
Chahardah Cherik I, Mohammadi S.
europepmc   +1 more source

Silicon-Based Biosensors: A Critical Review of Silicon's Role in Enhancing Biosensing Performance. [PDF]

Biosensors (Basel)
Muhammad W, Song J, Kim S, Ahmed F, Cho E, Lee H, Kim J.   +6 more
europepmc   +1 more source

Neuromorphic Floating-Gate Memory Based on 2D Materials. [PDF]

Cyborg Bionic Syst
Hu C, Liang L, Yu J, Cheng L, Zhang N, Wang Y, Wei Y, Fu Y, Wang ZL, Sun Q.   +9 more
europepmc   +1 more source

Overview of the Properties and Formation Process of Interface Traps in MOS and Linear Bipolar Devices. [PDF]

Micromachines (Basel)
Ren Y, Zhu M, Dai X, Li L, Liu M.
europepmc   +1 more source

Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for Thermal Effects. [PDF]

Nanomaterials (Basel)
Yugender P, Singh S, Kumar K, Dhar RS, Seteikin AY, Banerjee A, Samusev IG.   +6 more
europepmc   +1 more source

Al₂O₃/ZrO₂ dual-dielectric Gr/CNT nanoribbon vertical tunnel FET based biosensor for genomic classification and S-protein detection in SARS-CoV-2.

Heliyon
Venkatesh M, Parthasarathy P.
europepmc   +1 more source

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Symmetric tunnel field-effect transistor (S-TFET)

Current Applied Physics, 2015
Abstract A novel heterojunction symmetric tunnel field-effect transistor (S-TFET) has been proposed and investigated, for the first time, in order to address the inborn technical challenges of the conventional p-i-n TFET ( i.e., asymmetric TFET). With a band-to-band tunneling process between the germanium source/drain region and the silicon channel ...
Hyohyun Nam, Min Hee Cho, Changhwan Shin
openaire   +1 more source

Ambipolarity Factor of Tunneling Field-Effect Transistors (TFETs)

JSTS:Journal of Semiconductor Technology and Science, 2011
The ambipolar behavior of tunneling field- effect transistors (TFETs) has been investigated quantitatively by introducing a novel parameter: ambipolarity factor (ν). It has been found that the malfunction of TFET can result from the ambipolar state which is not on- or off- state.
Jung-Shik Jang, Woo-Young Choi
openaire   +1 more source

Simulation Studies of Tunnel Field Effect Transistor (TFET)

2012 International Conference on Advances in Computing and Communications, 2012
TFET is proposed as an alternative to Metal Oxide Semiconductor Field Effect Transistor. In these devices, tunneling currents are no longer considered as unwanted parasitics. In this work, the device architecture and performance of both n-type and p-type TFETs with a channel length of 30nm are studied.
Aswathy M., Nitha M. Biju, Rama Komaragiri   +2 more
openaire   +1 more source