Results 11 to 20 of about 104,391 (313)

Study of Electronic and Transport Properties in Double-Barrier Resonant Tunneling Systems

Nanomaterials, 2022
Resonant tunneling devices are still under study today due to their multiple applications in optoelectronics or logic circuits. In this work, we review an out-of-equilibrium GaAs/AlGaAs double-barrier resonant tunneling diode system, including the effect
John A. Gil-Corrales, Juan A. Vinasco, Miguel E. Mora-Ramos, Alvaro L. Morales, Carlos A. Duque   +4 more
doaj   +2 more sources

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width [PDF]

Applied Physics Letters, 2011
The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for nonsegregated contacts separated by micrometer-sized gaps.
Reckinger, N., Tang, Xing, Dubois, Emmanuel, Larrieu, G., Flandre, D., Raskin, J.P., Afzalian, A.   +6 more
openaire   +7 more sources

Long-range quantum tunneling via matter waves [PDF]

Communications Physics
Quantum tunneling is a quantum phenomenon in which a microscopic object crosses through a potential barrier even if its energy cannot overcome the barrier. A general belief is that tunneling occurs only when the barrier width is comparable to, or smaller
Yuan-Xing Yang, Si-Yuan Bai, Jun-Hong An
doaj   +2 more sources

Klein Tunneling in β₁₂ Borophene

Nanomaterials
Motivated by the recent observation of Klein tunneling in 8-Pmmn borophene, we delve into the phenomenon in β12 borophene by employing tight-binding approximation theory to establish a theoretical mode.
Jinhao Lai, Lekang Wang, Fu Li, Hongbin Zhang, Qingtian Zhang   +4 more
doaj   +2 more sources

Klein Tunneling through Triple Barrier in AB Bilayer Graphene [PDF]

Annals of Physics, 2022
The transport properties of charge carriers in AB bilayer graphene through a triple electrostatic barrier are investigated. The transmission and reflection using the boundary conditions together with the transfer matrix method are calculated.
Mouhamadou Hassane Saley, Abderrahim El Mouhafid, A. Jellal, A. Siari   +3 more
semanticscholar   +1 more source

Space-time-resolved quantum field approach to Klein-tunneling dynamics across a finite barrier [PDF]

Physical Review A, 2022
We investigate Klein tunneling through finite potential barriers with space-time resolved solutions to relativistic quantum field equations. We find that no particle actually tunnels through a finite supercritical barrier, even in the case of resonant ...
M. Alkhateeb, A. Matzkin
semanticscholar   +1 more source

Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts

International Electron Devices Meeting, 2022
We investigate several options for metal contacts to monolayer 2D semiconductors with an in-house developed, ab-initio transport methodology. We identify an optimum separation between the metal and the semiconductor resulting in minimum contact ...
D. Lizzit, P. Khakbaz, F. Driussi, M. Pala, D. Esseni   +4 more
semanticscholar   +1 more source

Investigation on a novel SiC Schottky barrier diode hydrogen sensor with trench-insulator structure

Materials Research Express, 2021
A novel SiC Schottky barrier diode (SBD) hydrogen gas sensor with trench-insulator structure was proposed in this paper. A physical model is built for this hydrogen sensor based on 4H-SiC SBD thermionic emission theory, tunneling effect of carriers ...
Yonglan Qi, Kaiyuan Lai, Haojie Lv, Bao Qi, Yuheng Zhao   +4 more
doaj   +1 more source

Electron tunneling time measured by photoluminescence excitation correlation spectroscopy [PDF]

, 1989
The tunneling time for electrons to escape from the lowest quasibound state in the quantum wells of GaAs/AlAs/GaAs/AlAs/GaAs double-barrier heterostructures with barriers between 16 and 62 Å has been measured at 80 K using photoluminescence excitation ...
Chow, D. H., Jackson, M. K., Johnson, M. B., McGill, T. C., Nieh, C. W.   +4 more
core   +1 more source

A Novel Low On–State Resistance Si/4H–SiC Heterojunction VDMOS with Electron Tunneling Layer Based on a Discussion of the Hetero–Transfer Mechanism

Crystals, 2023
In this study, we propose a novel silicon (Si)/silicon carbide (4H–SiC) heterojunction vertical double–diffused MOSFET with an electron tunneling layer (ETL) (HT–VDMOS), which improves the specific on–state resistance (RON), and examine the hetero ...
Hang Chen, Yourun Zhang, Rong Zhou, Zhi Wang, Chao Lu, Zehong Li, Bo Zhang   +6 more
doaj   +1 more source