Results 21 to 30 of about 104,391 (313)

Hartman effect in presence of Aharanov Bohm flux [PDF]

, 2003
The Hartman effect for the tunneling particle implies the independence of group delay time on the opaque barrier width, with superluminal velocities as a consequence.
A.M. Jayannavar, Anantha Ramakrishna, Anantha Ramakrishna, Benjamin, Benjamin, Benjamin, Büttiker, Büttiker, Büttiker, Büttiker, Comtet, Datta, de Bianchi, Deo, Enders, Enders, Fletcher, Fyodorov, Gefen, Gopar, Griffith, Gupta, Hartman, Hauge, Jayannavar, Jayannavar, Jayannavar, Jayannavar, Joshi, Joshi, Joshi, Landauer, Nimtz, Olkhovsky, Olkhovsky, Pareek, Raishma Krishnan, Spielmann, Steinberg, Swarnali Bandopadhyay, Washburn, Wigner, Winful, Winful, Winful, Winful, Xia   +46 more
core   +2 more sources

Electron tunnelling through a quantifiable barrier of variable width

Journal of Physics: Conference Series, 2009
This is the first study of electron tunnelling through a quantifiable barrier of adjustable width. We find quantitative agreement between the measured and calculated tunnelling probability with no adjustable constants. The tunnel barrier is a thin film of 3He on Cs1 which it wets.
A F G Wyatt, H Bromberger, J Klier, P Leiderer, M Zech   +4 more
openaire   +1 more source

Tunneling Time in Attosecond Experiments and Time Operator in Quantum Mechanics

Mathematics, 2018
Attosecond science is of a fundamental interest in physics. The measurement of the tunneling time in attosecond experiments, offers a fruitful opportunity to understand the role of time in quantum mechanics (QM).
Ossama Kullie
doaj   +1 more source

Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain

IEEE Journal of the Electron Devices Society, 2014
In this paper, we have demonstrated that overlapping the gate on the drain can suppress the ambipolar conduction, which is an inherent property of a tunnel field effect transistor (TFET).
Dawit B. Abdi, M. Jagadesh Kumar
doaj   +1 more source

Low working loss Si/4H–SiC heterojunction MOSFET with analysis of the gate-controlled tunneling effect

Journal of Electronic Science and Technology, 2023
A silicon (Si)/silicon carbide (4H–SiC) heterojunction double-trench metal-oxide-semiconductor field effect transistor (MOSFET) (HDT-MOS) with the gate-controlled tunneling effect is proposed for the first time based on simulations.
Hang Chen, You-Run Zhang
doaj   +1 more source

Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate [PDF]

Journal of Optoelectronical Nanostructures, 2022
In this paper, we demonstrate an electrostatically dopedjunctionless tunnel field effect transistor which iscomposed of a staggered band alignment at theheterojunction.
Mahdi Mohammadkhani Ghiasvand, Zahra Ahangari, Hamed Nematian   +2 more
doaj   +1 more source

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier [PDF]

, 2013
Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics.
Dankert, André, Dash, Saroj P., Dulal, Ravi S.   +2 more
core   +2 more sources

Programmable Skyrmion Logic Gates Based on Skyrmion Tunneling [PDF]

Physical Review Applied, 2022
Magnetic skyrmions are promising candidates as elementary nanoscale bits in logic-in-memory devices, intrinsically merging high density memory and computing capabilities.
Naveen Sisodia, J. Pelloux-Prayer, L. Buda-Prejbeanu, L. Anghel, G. Gaudin, O. Boulle   +5 more
semanticscholar   +1 more source

Comparison of a direct measure of barrier crossing times with indirect measures such as the Larmor time

New Journal of Physics, 2021
Different approaches for considering barrier crossing times are analyzed, with special emphasis on recent experiments which attempt to measure what is commonly referred to as the Larmor tunneling time.
Tom Rivlin, Eli Pollak, Randall S Dumont
doaj   +1 more source

A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement [PDF]

مجله مدل سازی در مهندسی
In this paper, a novel heterostructure junctionless tunnel field effect transistor with silicon-on-nothing technology (SON HS-JLTFET) is proposed. The proposed device has two advantages over conventional JLTFET.
Amin Vanak, Amir Amini
doaj   +1 more source