Results 101 to 110 of about 1,500,059 (236)

Organic Electrochemical Transistors for Neuromorphic Devices and Applications

Advanced Materials, Volume 38, Issue 9, 12 February 2026.
Organic electrochemical transistors are emerging as promising platforms for neuromorphic devices that emulate neuronal and synaptic activities and can seamlessly integrate with biological systems. This review focuses on resultant organic artificial neurons, synapses, and integrated devices, with an emphasis on their ability to perform neuromorphic ...
Kexin Xiang, Jiajun Song, Hong Liu, Junxin Chen, Feng Yan   +4 more
wiley   +1 more source

White Light Interference Solution for Novel 3D NAND VIA Dishing Metrology

Journal of Microelectronic Manufacturing, 2019
In traditional 3D NAND design, peripheral circuit accounts for 20-30% of the chip real-estate, which reduces the memory density of flash memory. As 3D NAND technology stacks to 128 layers or higher, peripheral circuits may account for more than 50% of ...
Xiaoye Ding, Sicong Wang, Yi Zhou, Yanzhong Ma, Le Yang, Chi Chen   +5 more
doaj   +1 more source

Investigation of Erase Cycling Induced Joint Dummy Cell Disturbance in Dual-Deck 3D NAND Flash Memory. [PDF]

Micromachines (Basel), 2023
You K, Jin L, Jia J, Huo Z.
europepmc   +1 more source

Liquid‐in‐Liquid Prints: High‐Density Biochemically Encoded Information Preserved in Microdroplet Arrays

Advanced Materials, Volume 38, Issue 7, 2 February 2026.
This work introduces a novel approach for encoding and storing information in the liquid state in microdroplet arrays. These liquid‐in‐liquid prints are generated by a droplet printing system capable of dynamically setting the composition of each droplet pixel.
Maximilian Breitfeld, Robert Strutt, Leonard Fröhlich, Claudius L. Dietsche, Sebastian Bargfrede, Petra S. Dittrich   +5 more
wiley   +1 more source

Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era

Advanced Materials, Volume 38, Issue 7, 2 February 2026.
In this Review, the state of art of ferroelectric hybrid systems—combining ferroelectrics, 2D semiconductors, and molecular switches is presented—as next‐generation platforms for high‐density, multifunctional electronics. By discussing 2D FeFET applications, nanoscale material downscaling, M3D integration, and emerging ferroelectrics, it highlights ...
Haixin Qiu, Xiaoshi Qian, Dahong Qian, Paolo Samorì   +3 more
wiley   +1 more source

Optimizing Cell Structure to Improve Cell Characteristics in IGZO Channel-Based 3D NAND Flash With p-Type Gate

IEEE Access
For the first time, a novel IGZO channel-based 3D NAND Flash structure with an embedded p-type poly-Si injection layer is proposed, using integrated structural, material, and operational modifications to address the limitations of the conventional IGZO ...
Sungho Park, Youngho Jung, Daewoong Kang
doaj   +1 more source

Low-Power Stack-Level Programming Enabled by Optimized Dummy Word Line Voltage in 3-D NAND Flash Memory

IEEE Journal of the Electron Devices Society
In this paper, we propose a low-power stack-level programming scheme for ultrahigh stack 3D NAND flash memory. As the number of word lines (WLs) increases beyond 300 layers, the increased pass voltage leads to excessive power consumption and reliability ...
Kyungmin Lee, Gunwook Yoon, Seung Jae Baik, Myounggon Kang   +3 more
doaj   +1 more source

Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider V_th Window in 3D NAND Flash Using a Machine-Learning Method. [PDF]

Nanomaterials (Basel), 2022
Nam K, Park C, Yoon JS, Yun H, Jang H, Cho K, Kang HJ, Park MS, Sim J, Choi HC, Baek RH.   +10 more
europepmc   +1 more source

A Novel Structure Between WL Spaces to Improve the Retention Characteristics in 3D NAND Flash

IEEE Access
As NAND flash evolved from two-dimensional (2D) to three-dimensional (3D), all cells have been changed to share a charge trap layer (CTL). This change has a lateral charge spreading effect, which is the trapped charge spreading laterally.
Yunejae Suh, Hyewon Kyung, Youngho Jung, Daewoong Kang   +3 more
semanticscholar   +1 more source

Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories. [PDF]

Micromachines (Basel), 2021
Ramesh S, Ajaykumar A, Ragnarsson LÅ, Breuil L, El Hajjam GK, Kaczer B, Belmonte A, Nyns L, Soulié JP, Van den Bosch G, Rosmeulen M.   +10 more
europepmc   +1 more source