Results 111 to 120 of about 1,500,059 (236)

Effective Reduction of Hydrogen Diffusion and Reliability Degradation in Peripheral Transistor of Peripheral-Under-Cell (PUC) NAND Flash Memory

IEEE Journal of the Electron Devices Society
Recently, a new structure called PUC has been introduced, in which the periphery is located below the NAND cell to reduce chip area. However, as the SiN-based cell alloy process progresses during the NAND manufacturing process, there is a problem in that
Eunyoung Park, Hyun-Yong Yu
doaj   +1 more source

Enhanced programming efficiency in vertical NAND flash using self-boosting hot carrier injection. [PDF]

Sci Rep
Kim M, Hong J, Kim C, Kim SJ, Hwang S, Baik SJ, Jeon J.   +6 more
europepmc   +1 more source

Enabling scalable ferroelectric-based future generation vertical NAND flash with bonding-friendly architecture: strategies for erase and disturb optimization. [PDF]

Nanoscale Adv
Song I, Kim J, Lee S, Myeong I.
europepmc   +1 more source

Spatially programmable origami networks enable high-density mechanical computing for autonomous robotics. [PDF]

Nat Commun
Hu X, Tan T, Chen Y, Yan Z.
europepmc   +1 more source

A functionally complete logic gate in a soft photoresponsive hydrogel. [PDF]

Nat Commun
Mahmood F, Yashin VV, Balazs AC, Saravanamuttu K.   +3 more
europepmc   +1 more source

MoS₂ Channel-Enhanced High-Density Charge Trap Flash Memory and Machine Learning-Assisted Sensing Methodologies for Memory-Centric Computing Systems. [PDF]

Adv Sci (Weinh)
Kim KH, Park JH, Lee KJ, Seo JW, Kim YK, Choi J, Seo MJ, Jang BC.   +7 more
europepmc   +1 more source

Hafnium-Based Ferroelectric Diodes for Logic-in-Memory Application. [PDF]

Micromachines (Basel)
Han S, Zhang Y, Wang X, Tong P, Liu C, Zeng Q, Liu J, Huang X, Li Q, Cao R, Wang W.   +10 more
europepmc   +1 more source

Advancing the Frontiers of HfO₂-Based Ferroelectric Memories: Innovative Concepts from Materials to Applications. [PDF]

Adv Mater
Zhou Z, Li L, Feng Y, Wang X, Zheng Z, Jiao L, Zheng H, Shi Y, Ang KW, Gong X.   +9 more
europepmc   +1 more source

Universal Logic-in-Memory Gates Using Reconfigurable Silicon Transistors. [PDF]

Micromachines (Basel)
Kim S, Kim N, Ko Y, Lim D.
europepmc   +1 more source