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Advanced RTN Analysis on 3D NAND Trench Devices Using Physics-Informed Machine Learning Framework
IEEE International Reliability Physics Symposium3D NAND Trench cells have been proposed for further cost reduction by achieving lateral scaling. However, further dimension scaling of the memory cells raises concerns about random telegraph noise (RTN).
Y. Higashi +19 more
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3D RRAM design and benchmark with 3d NAND FLASH
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014The monolithic 3D integration of resistive switching random access memory (RRAM) is one attractive approach to build high-density non-volatile memory. In this paper, the design considerations of 3D vertical RRAM architecture are presented from the device, circuit to system level. Due to the voltage drop and sneak path problem, the sub-array size of the
Pai-Yu Chen +3 more
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IEEE International Solid-State Circuits Conference
3D-NAND Flash memory is evaluated as a key device that is handling the explosive data growth, showing steady bit growth and areal density increases >30% every year.
Won-Chang Jung +53 more
semanticscholar +1 more source
3D-NAND Flash memory is evaluated as a key device that is handling the explosive data growth, showing steady bit growth and areal density increases >30% every year.
Won-Chang Jung +53 more
semanticscholar +1 more source
3D analysis of high-aspect ratio features in 3D-NAND
Metrology, Inspection, and Process Control for Microlithography XXXIV, 2020We demonstrate the application of 3D tomography by FIB-SEM to analyze channel holes in 3D-NAND. We automatically analyze the 3D channel profiles for size, shape, and placement from the reconstructed full 3D volume. As the data contains thousands of holes, and each hole is sampled with a resolution of a few nanometer in 3D, this method provides a vast ...
Jens-Timo Neumann +8 more
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A 321-Layer 2Tb 4b/cell 3D-NAND-Flash Memory with a 75MB/s Program Throughput
IEEE International Solid-State Circuits ConferenceThe rising demand for high-density and high-performance NAND Flash is unprecedented, due to the expansion of data within enterprise SSDs, which fueled by the growth of the artificial intelligence industry.
Wanik Cho +48 more
semanticscholar +1 more source
Trends and Future Challenges of 3D NAND Flash Memory
International Memory Workshop, 2023NAND flash memory industry has made significant progress in the density and technology since the introduction of 3D NAND flash memory. It took only a few years to change the mainstream of the NAND flash memory from 2D NAND to 3D NAND thanks to its ...
S. Shim, J. Jang, J. Song
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30.1 A 28Gb/mm24XX-Layer 1Tb 3b/Cell WF-Bonding 3D-NAND Flash with 5.6Gb/s/Pin IOs
IEEE International Solid-State Circuits ConferenceWith the ever-increasing demand for AI and data-intensive applications, $3\mathrm{D}$ NAND Flash memories [1]–[6] need to achieve both high-density and high-speed IOS.
Sang-Soo Park +55 more
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MGC: Multiple-Gray-Code for 3D NAND Flash based High-Density SSDs
International Symposium on High-Performance Computer Architecture, 2023QLC (4-bit-per-cell) and more-bit-per-cell 3D NAND flash memories are increasingly adopted in large storage systems. While achieving significant cost reduction, these memories face degraded performance and reliability issues. The industry has adopted two-
Yina Lv +6 more
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Reliability challenges in 3D NAND Flash memories
2019 IEEE 11th International Memory Workshop (IMW), 2019The reliability of 3D NAND Flash memory technology is depending on many factors. Most of them are related to the process-induced variability of the layers. Endurance, data retention capabilities, and cross-temperature immunity are the metrics that become affected by this, turning in peculiar reliability challenges that are difficult to be tackled ...
Zambelli C., Micheloni R., Olivo P.
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IEEE Electron Device Letters
In this letter, we investigated the boosted channel potential (V $_{\mathbf {\textit {ch}}}$ ) in inhibited strings with dimple (concave and convex) structures and analyzed the program (PGM) disturbance caused by $V_{\mathbf {{ch}}}$ .
Jesun Park, Myounggon Kang
semanticscholar +1 more source
In this letter, we investigated the boosted channel potential (V $_{\mathbf {\textit {ch}}}$ ) in inhibited strings with dimple (concave and convex) structures and analyzed the program (PGM) disturbance caused by $V_{\mathbf {{ch}}}$ .
Jesun Park, Myounggon Kang
semanticscholar +1 more source