Results 21 to 30 of about 1,500,059 (236)

Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation

Small Structures
Oxide semiconductors (OSs) are promising materials for NAND flash memory, offering the advantages of high field‐effect mobility and superior large‐area uniformity but suffering from low thermal stability, trade‐off between mobility and stability, and the
Su‐Hwan Choi, Jae‐Min Sim, Jeongmin Shin, Seong‐Hwan Ryu, Taewon Hwang, So Young Lim, Hye‐Jin Oh, Jae‐Hyeok Kwag, Jun‐Yeoub Lee, Ki‐Cheol Song, Yeonhee Lee, Minju Song, Junghwan Kim, Chang‐Kyun Park, Yun‐Heub Song, Jin‐Seong Park   +15 more
doaj   +2 more sources

Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability [PDF]

Micromachines
Three-dimensional charge-trapping (CT) NAND flash memory has attracted extensive attention owing to its unique merits, including huge storage capacities, large memory densities, and low bit cost.
Xuesong Zheng, Yifan Wu, Haitao Dong, Yizhi Liu, Pengpeng Sang, Liyi Xiao, Xuepeng Zhan   +6 more
doaj   +2 more sources

Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization

IEEE Journal of the Electron Devices Society, 2022
In flash memory technology, mechanical stress is considered as one of the major factors that can influence the device performance. Furthermore, mechanical stress can have a greater impact on the electrical performance in 3D NAND than in 2D NAND because ...
Eun-Kyeong Jang, Ik-Jyae Kim, Cheon An Lee, Chiweon Yoon, Jang-Sik Lee   +4 more
doaj   +1 more source

Analytical Modeling of 3D NAND Flash Cell With a Gaussian Doping Profile

IEEE Access, 2022
The incessantly increasing demand for highly dense storage medium in this era of big-data has led to the development of 3D NAND Flash memories. 3D NAND Flash based SSDs have revolutionized edge storage and become an integral part of the data warehouses ...
Amit Kumar, Raushan Kumar, Shubham Sahay
doaj   +1 more source

Modeling of 3D NAND Characteristics for Cross‐Temperature by Using Graph Neural Network and Its Application

Advanced Intelligent Systems, 2023
Herein, the impact of cross‐temperature on 3D NAND flash memory is modeled by considering adjacent cells using machine learning. The cells comprising NAND flash memory exhibit diverse states and connectivity patterns.
Kyeongrae Cho, Jeong-Sik Lee, Chanyang Park, Hyeok Yun, Hyundong Jang, Seungjoon Eom, Min Sang Park, Hyun-Chul Choi, Rock-Hyun Baek   +8 more
doaj   +1 more source

Investigation of Re-Program Scheme in Charge Trap-Based 3D NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2021
Early retention or initial threshold voltage shift (IVS) is one of the key reliability challenges in charge trapping memory (CTM) based 3D NAND flash. Re-program scheme was introduced in quad-level-cell (QLC) NAND (Shibata et al., 2007, Lee et al., 2018,
Ting Cheng, Jianquan Jia, Lei Jin, Xinlei Jia, Shiyu Xia, Jianwei Lu, Kaiwei Li, Zhe Luo, Da Li, Hongtao Liu, Qiguang Wang, An Zhang, Daohong Yang, Zongliang Huo   +13 more
doaj   +1 more source

3D NAND Flash Memory Cell Current and Interference Characteristics Improvement With Multiple Dielectric Spacer

IEEE Access, 2023
To achieve high density, the spacer length of three dimensional (3D) NAND device has been scaled down. When the program/erase cycle repeats, problems such as electrons accumulation in the inter-cell region are occurred. To solve this problem, a method of
Yun-Jae Oh, Inyoung Lee, Yunejae Suh, Daewoong Kang, Il Hwan Cho   +4 more
doaj   +1 more source

Self-Learning Hot Data Prediction: Where Echo State Network Meets NAND Flash Memories [PDF]

, 2020
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new ...
Ai, Jiaqiu, Fang, Xiaoxin, Luo, Qiwu, Sun, Yichuang, Yang, Chunhua   +4 more
core   +2 more sources

Balancing Page Endurance Variation Between Layers to Extend 3D NAND Flash Memory Lifetime. [PDF]

Micromachines (Basel)
With vertical stacking, 3D NAND’s flash memory can achieve continuous capacity growth. However, the endurance variation between the stacked layers becomes more and more significant due to process variation, which will lead to the underutilization of many
Wang J, Fan Y, Du Y, Huang S, Wan Y.
europepmc   +2 more sources

Metrology Challenges in 3D NAND Flash Technical Development and Manufacturing

Journal of Microelectronic Manufacturing, 2020
3D NAND technical development and manufacturing face many challenges to scale down their devices, and metrology stands out as much more difficult at each turn. Unlike planar NAND, 3D NAND has a three-dimensional vertical structure with high-aspect ratio.
Wei Zhang, Jun Xu, Sicong Wang, Yi Zhou, Jian Mi   +4 more
doaj   +1 more source