Results 31 to 40 of about 1,500,059 (236)

Hydrogen Source and Diffusion Path for Poly-Si Channel Passivation in Xtacking 3D NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2020
Poly-Si channels need well passivated by using hydrogen passivation process in 3D NAND flash memories for better poly-Si quality with low trap density.
Xinshuai Shen, Zhiliang Xia, Tao Yang, Lei Liu, Jinwen Dong, Wenxi Zhou, Chunlong Li, Zongliang Huo   +7 more
doaj   +1 more source

Impact of Cycling Induced Intercell Trapped Charge on Retention Charge Loss in 3-D NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2020
As the 3D NAND technology developing toward more and more stack layers, it is essential to shrink the gate length (Lg) and inter-gate space (Ls). However, one of key concerns of scaling Lg/Ls 3D NAND flash is post-cycling data retention characteristics ...
Xinlei Jia, Lei Jin, Wei Hou, Zhiyu Wang, Songmin Jiang, Kaiwei Li, Dejia Huang, Hongtao Liu, Wenzhe Wei, Jianwei Lu, An Zhang, Zongliang Huo   +11 more
doaj   +1 more source

A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2022
Experimental results indicate that the conventional program suspend scheme in 3D NAND flash memory chip can generate unexpected additional read fail bits and reduce the reliability of 3D NAND flash memory. These extra read fail bits are observed when the
Zhichao Du, Zhipeng Dong, Kaikai You, Xinlei Jia, Ye Tian, Yu Wang, Zhaochun Yang, Xiang Fu, Fei Liu, Qi Wang, Lei Jin, Zongliang Huo   +11 more
doaj   +1 more source

Additively manufacturable micro-mechanical logic gates. [PDF]

, 2019
Early examples of computers were almost exclusively based on mechanical devices. Although electronic computers became dominant in the past 60 years, recent advancements in three-dimensional micro-additive manufacturing technology provide new fabrication ...
Chizari, Samira, Hopkins, Jonathan B, Jackson, Julie A, Panas, Robert M, Pascall, Andrew J, Shaw, Lucas A, Song, Yuanping   +6 more
core   +2 more sources

Biomimetic microelectronics for regenerative neuronal cuff implants [PDF]

, 2015
Smart biomimetics, a unique class of devices combining the mechanical adaptivity of soft actuators with the imperceptibility of microelectronics, is introduced.
Baunack, Stefan, Karnaushenko, Daniil, Karnaushenko, Dmitriy D, Koch, Britta, Makarov, Denys, Meyer, Anne K, Münzenrieder, Niko, Petti, Luisa, Schmidt, Oliver G, Tröster, Gerhard   +9 more
core   +1 more source

Analytical Modeling of Threshold Voltage and Subthreshold Slope for 3-D NAND Flash Memory With a Non-Uniform Doping Profile

IEEE Journal of the Electron Devices Society, 2023
The emergence of data-driven technologies including Internet of Things (IoT), artificial intelligence (AI), and cloud computing has led to a surge in data generation and mining.
Amit Kumar, Shubham Sahay
doaj   +1 more source

Novel Pattern-Centric Solution for XtackingTM AFM Metrology

Journal of Microelectronic Manufacturing, 2019
3D NAND (three-dimensional NAND type) has rapidly become the standard technology for enterprise flash memories, and is also gaining widespread use in other applications.
Sicong Wang, Jian Mi, Abhishek Vikram, Gao Xu, Guojie Chen, Liming Zhang, Pan Liu   +6 more
doaj   +1 more source

Simulation Acceleration of Bit Error Rate Prediction and Yield Optimization of 3D V-NAND Flash Memory

IEEE Access, 2023
When designing 3D V-NAND technologies with a gate induced drain leakage (GIDL) assisted erase scheme, many experiments must be conducted to determine the optimal GIDL design targets to achieve fast erase performance and secure yield characteristics ...
Yohan Kim, Soyoung Kim
doaj   +1 more source

Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature Write–Read Operations in 3-D NAND Flash

IEEE Journal of the Electron Devices Society, 2021
Reading data at a temperature which different from writing can cause a large number of failed bits in 3D NAND Flash memory. In this work, the threshold voltage (Vth) temperature effect of 3D NAND flash memory cell was investigated and a method was ...
Dan Wu, Hailong You, Xiaoguang Wang, Shujing Zhong, Qi Sun   +4 more
doaj   +1 more source

A novel gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance with disturbance-less program operation

Memories - Materials, Devices, Circuits and Systems, 2023
In this paper, we propose a gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance and reliability. First, in the selected string, we confirmed that the proposed structure can improve program performance using negative ...
Jae-Min Sim, In-Ku Kang, Sung-In Hong, Changhan Kim, Changhyun Cho, Kyunghoon Min, Yun-Heub Song   +6 more
doaj   +1 more source