Results 41 to 50 of about 1,500,059 (236)
Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells [PDF]
, 2005 A device physics model has been developed for radial p-n junction nanorod solar cells, in which densely packed nanorods, each having a p-n junction in the radial direction, are oriented with the rod axis parallel to the incident light direction.
Atwater, Harry A. +2 more
core +1 more source
3D NAND flash memory based on junction-less a-Si:H channel with high on/off current ratio
AIP Advances, 2022 As the key hardware unit of computing in memory, 3D NAND flash memory has been the focus of the artificial intelligence (AI) era due to its high efficiency in processing massive and diverse data, which is superior to the conventional von-Neumann ...
Xinyue Yu +7 more
doaj +1 more source
Ratchet Cellular Automata [PDF]
, 2002 In this work we propose a ratchet effect which provides a general means of performing clocked logic operations on discrete particles, such as single electrons or vortices. The states are propagated through the device by the use of an applied AC drive. We
C. Buzea +6 more
core +1 more source
Imaging velocities of a vibrating object by stroboscopic sideband holography [PDF]
, 2012 We propose here to combine sideband holography with stroboscopic illumination synchronized with the vibration of an object. By sweeping the optical frequency of the reference beam such a way the holographic detection is tuned on the successive sideband ...
Atlan, Michael +3 more
core +4 more sources
Architectural and Integration Options for 3D NAND Flash Memories
Computers, 2017 Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in ...
Rino Micheloni +3 more
doaj +1 more source
Investigation of Poly Silicon Channel Variation in Vertical 3D NAND Flash Memory
IEEE Access, 2022 Since the most of three dimensional (3D) NAND devices’ channel is composed of polysilicon grain, the actual 3D NAND channel has a wave-shaped channel, not uniform shape.
Inyoung Lee +3 more
doaj +1 more source
Offset-compensated comparator with full-input range in 150nm FDSOI CMOS-3d technology [PDF]
, 2010 This paper addresses an offset-compensated comparator with full-input range in the 150nm FDSOI CMOS- 3D technology from MIT- Lincoln Laboratory. The comparator discussed here makes part of a vision system.
Brea Sánchez, Víctor Manuel +5 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2021 For triple-level or quad-level 3D NAND flash memory, narrowing the Vth distribution of each state without influencing page program performance is one of the challenges.
Zhichao Du +6 more
doaj +1 more source
3D-NAND flash memory based neuromorphic computing
Acta Physica Sinica, 2022 A neuromorphic chip is an emerging AI chip. The neuromorphic chip is based on non-Von Neumann architecture, and it simulates the structure and working principle of the human brain. Compared with non-Von Neumann architecture AI chips, the neuromorphic chips have significant improvement of efficiency and energy consumption advantages.
Yang-Yang Chen +3 more
openaire +1 more source
Electronics Letters, 2022 This letter presents an efficient built‐in error detection methodology for 3D NAND flash memories, in which fast page‐oriented data comparison and column parallel error detection are firstly proposed.
HM. Cao +5 more
doaj +1 more source