Results 51 to 60 of about 1,500,059 (236)

Framework to Enhance Teaching and Learning in System Analysis and Unified Modelling Language [PDF]

, 2018
Cowling, MA ORCiD: 0000-0003-1444-1563; Munoz Carpio, JC ORCiD: 0000-0003-0251-5510Systems Analysis modelling is considered foundational for Information and Communication Technology (ICT) students, with introductory and advanced units included in nearly ...
Birt, James R., Cowling, Michael A., Munoz, Juan Carlos   +2 more
core   +2 more sources

Self-Organizing Mapping Neural Network Implementation Based on 3-D NAND Flash for Competitive Learning

IEEE Journal of the Electron Devices Society
Self-organizing Map (SOM) neural network is a prominent algorithm in unsupervised machine learning, which is widely used for data clustering, high-dimensional visualization, and feature extraction.
Anyi Zhu, Lei Jin, Wen Zhou, Tianchun Ye, Zongliang Huo   +4 more
doaj   +1 more source

Universal Three Dimensional Optical Logic

, 2014
Modern integrated circuits are essentially two-dimensional (2D). Partial three-dimensional (3D) integration and 3D-transistor-level integrated circuits have long been anticipated as routes to improve the performance, cost and size of electronic computing
Ensley, Mcleod, Miller, Minardi, Solli
core   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Total Ionizing Dose Effects in Advanced 28 nm Charge Trapping 3D NAND Flash Memory

Electronics
The impacts of total ionizing dose (TID) were investigated in 28 nm 3D charge trapping (CT) NAND Flash memories. This study focused on the variations in the raw bit error rate (RBER) of irradiated flash across different operational modes and bias states.
Xuesong Zheng, Yuhang Wang, Rigen Mo, Chaoming Liu, Tianqi Wang, Mingxue Huo, Liyi Xiao   +6 more
semanticscholar   +1 more source

An Improved Dimensional Measurement Method of Staircase Patterns With Higher Precision in 3D NAND

IEEE Access, 2020
3D NAND is a great architectural innovation in the field of flash memory. The staircase for control gate is a unique and important process in the manufacturing of 3D NAND.
Peizhen Hong, Zhiguo Zhao, Jun Luo, Zhiliang Xia, Xiaojing Su, Libin Zhang, Chunlong Li, Zongliang Huo   +7 more
doaj   +1 more source

Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory

IEEE Access, 2021
In charge-trap (CT) three-dimensional (3D) NAND flash memory, the transition layer between Si3N4 CT layer and SiO2 tunneling layer is inevitable, and the defects in the transition layer are expected to cause both lateral and vertical charge loss.
Fei Wang, Yuan Li, Xiaolei Ma, Jiezhi Chen   +3 more
doaj   +1 more source

Coding scheme for 3D vertical flash memory

, 2015
Recently introduced 3D vertical flash memory is expected to be a disruptive technology since it overcomes scaling challenges of conventional 2D planar flash memory by stacking up cells in the vertical direction.
Bandic, Zvonimir, Kim, Yongjune, Kumar, B. V. K. Vijaya, Mateescu, Robert, Song, Seung-Hwan   +4 more
core   +1 more source

Intrinsic Nanopore‐Assisted SnP2S6 Memristors With Ti Ion Dynamics for Compact Logic‐In‐Memory Hardware

Advanced Functional Materials, EarlyView.
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun, Sanchali Mitra, Hongxi Su, Jiali Huo, Haofei Zheng, Michel Bosman, Yee Sin Ang, Kah‐Wee Ang   +7 more
wiley   +1 more source

Light‐Driven Reconfigurable Logic in a Monolithic Perovskite Device via Nonlinear Photoresponse Switching

Advanced Materials, EarlyView.
This study demonstrates a monolithic perovskite OELG device that performs all eight logic operations, including XOR and XNOR, without external bias. Enabled by trap‐engineered MAPbI3:PLL and dual photogates, it achieves reconfigurable logic and parallel decoding of amplitude–frequency signals, supporting scenario‐configured logic‐level separation for ...
Dante Ahn, Youngsoo Jang, Minz Lee, WooKyung Jeon, Yohan Yoon, Heon Lee, Assa Aravindh Sasikala, Namsoo Lim, Chandran Balamurugan, Hyeonghun Kim, Gun‐Young Jung, Sooncheol Kwon, Minah Seo, Yusin Pak   +13 more
wiley   +1 more source