Results 61 to 70 of about 1,500,059 (236)

Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines [PDF]

, 2010
Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems.
Derek Abbott, Kamran Eshraghian, Kyoung-rok Cho, Omid Kavehei, Soon-ku Kang, Student Member, Sung-mo Steve Kang   +6 more
core  

High‐κ Perovskite‐Like Ternary Niobium Oxide Dielectrics for 2D Electronics

Advanced Materials, EarlyView.
High‐κ dielectrics are vital for scaled electronics. Here, a family of 2D high‐κ perovskite‐like ternary niobium oxides is synthesized via a molten salt‐assisted method. Their integration into FETs and logic gates reveals superior switching characteristics, providing a fresh material platform and new insights for the advancement of high‐performance 2D ...
Biao Zhang, Jianmiao Guo, Jianmin Yan, Jialiang Wang, Chao Yun, Guang Zeng, Jie Li, Cong Wang, Zhengdao Xie, Yanglong Hou, Yang Chai   +10 more
wiley   +1 more source

Rethinking Split Manufacturing: An Information-Theoretic Approach with Secure Layout Techniques

, 2017
Split manufacturing is a promising technique to defend against fab-based malicious activities such as IP piracy, overbuilding, and insertion of hardware Trojans. However, a network flow-based proximity attack, proposed by Wang et al.
Ashraf, Mohammed, Garg, Siddharth, Knechtel, Johann, Patnaik, Satwik, Sengupta, Abhrajit, Sinanoglu, Ozgur   +5 more
core   +1 more source

Forensic Analysis of the Nintendo 3DS NAND

Digital Investigation, 2019
Abstract Games consoles present a particular challenge to the forensics investigator due to the nature of the hardware and the inaccessibility of the file system. Many protection measures are put in place to make it deliberately difficult to access raw data in order to protect intellectual property, enhance digital rights management of software and ...
Pessolano, Gus, Read, Huw O. L., Sutherland, Iain, Xynos, Konstantinos   +3 more
openaire   +2 more sources

All‐Hydrogel‐Based Organic Electrochemical Transistors for Implantable Physiological Signal Monitoring

Advanced Science, EarlyView.
All‐hydrogel based n‐type depletion‐mode OECTs is developed using a semiconductor hydrogel formed via ionic‐liquid‐mediated phase separation, combining efficient ion‐electron transport, tissue‐like softness, and long‐term biocompatibility. The device can monitor EOG and ECG on human skin and record real‐time ECG subcutaneously in rats, providing a ...
Qicheng Liang, Yue Wang, Ruizhe Wang, Wanfang Zhang, Runcheng Hao, Yueheng Zhong, Jingling Zhang, Xiang Li, Weichu Chen, Chunyu Fan, Yuwen Zhu, Yu Sun, Hong Jiang, Hengda Sun, Gang Wang   +14 more
wiley   +1 more source

Analysis of High-Temperature Data Retention in 3D Floating-Gate nand Flash Memory Arrays

IEEE Journal of the Electron Devices Society, 2023
In this paper, we present a detailed experimental investigation of high-temperature data retention in 3D floating-gate NAND Flash memory arrays. Data reveal that charge detrapping from the cell tunnel oxide and depassivation of traps in the string ...
Gerardo Malavena, Mattia Giulianini, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni   +4 more
doaj   +1 more source

Dissolution Study of Biodegradable Magnesium Silicide Thin Films for Transient Electronic Applications

Advanced Science, EarlyView.
Magnesium silicide (Mg2Si) is introduced as a narrow‐bandgap, biodegradable semiconductor for transient electronics. RF‐sputtered and annealed Mg2Si thin films show high intrinsic electrical conductivity and low thermal conductivity. The polycrystalline material undergoes hydrolysis in aquatic and composting environments with minimal cytotoxicity ...
Ji‐Woo Gu, Jun‐Seok Shim, Minjung Chae, Yoonseong Jung, Su‐Min Kim, Young‐In Ryu, Jae‐Hwan Lee, Sung‐Woo Kim, Kyung‐Sub Kim, Tae‐Woo Lee, Edyta Wyszkowska, Jungho Shin, Hyejin Jang, Ju‐Young Kim, Myoung‐Ryul Ok, Jong‐hyoung Kim, Jae‐Young Bae, Seung‐Kyun Kang   +17 more
wiley   +1 more source

All‐Optical Control of Bidirectional Polarization Switching in Ferroelectric Heterostructures for Neuromorphic and In‐Memory Computing

Advanced Science, EarlyView.
We propose an optical ferroelectric field‐effect transistor, composed of a MoS2/CIPS heterostructure, demonstrates the feasibility of all‐optical nonvolatile memory, neuromorphic computing, and logic‐in‐memory operations. The device exhibits reversible light‐controlled memory states, retina‐like synaptic plasticity, and wavelength‐selective ...
Jingjie Niu, Jiahui Lyu, Jie Li, Koyal Suman Samantaray, Cheolhwa Jang, Yoonmyung Lee, Ji‐Sang Park, Sungjoo Lee   +7 more
wiley   +1 more source

Oxide Semiconductor Thin‐Film Transistors for Low‐Power Electronics

Advanced Science, EarlyView.
This review explores the progress of oxide semiconductor thin‐film transistors in low‐power electronics. It illustrates the inherent material advantages of oxide semiconductor, which enable it to meet the low‐power requirements. It also discusses current strategies for reducing power consumption, including interface and structure engineering.
Shuhui Ren, Qi Huang, Dingwei Li, Saisai Wang, Yitong Chen, Huihui Ren, Yan Wang, Yingjie Tang, Bowen Zhu   +8 more
wiley   +1 more source

Modeling Retention Errors of 3D NAND Flash for Optimizing Data Placement

ACM Trans. Design Autom. Electr. Syst.
Considering 3D NAND flash has a new property of process variation (PV), which causes different raw bit error rates (RBER) among different layers of the flash block.
Huan Tian, Jiewen Tang, Jun Li, Zhibing Sha, Fan Yang, Zhigang Cai, Jianwei Liao   +6 more
semanticscholar   +1 more source