Results 71 to 80 of about 1,500,059 (236)
Nonvolatile memory with molecule-engineered tunneling barriers
, 2008 We report a novel field-sensitive tunneling barrier by embedding C60 in SiO2 for nonvolatile memory applications. C60 is a better choice than ultra-small nanocrystals due to its monodispersion.
Baik S. J. +10 more
core +1 more source
Programming Next‐Generation Synthetic Biosensors by Genetic Circuit Design
Advanced Science, EarlyView.Synthetic biology enables genetic circuit‐based biosensing to detect diverse targets, process signals, and transduce them into readable outputs or intracellular regulatory activities. However, field deployment and real‐world application of such synthetic biosensors face considerable challenges in sensitivity, specificity, speed, stability, and ...
Yuanli Gao +4 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong +4 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Metal halide perovskite field‐effect transistors (PeFETs) offer great promise for flexible, low‐cost, and high‐performance due to their excellent charge carrier properties. However, challenges like ion migration, hysteresis, and instability limit their performance.
Georgios Chatzigiannakis +13 more
wiley +1 more source
EngIn order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim +2 more
doaj +1 more source
The QWalk Simulator of Quantum Walks
, 2008 Several research groups are giving special attention to quantum walks recently, because this research area have been used with success in the development of new efficient quantum algorithms.
Aharonov +15 more
core +1 more source
Advanced Electronic Materials, EarlyView.Coercive voltage enhancement in hafnia‐based ferroelectric–dielectric heterostructures is shown to originate from leakage‐governed voltage division between the ferroelectric and dielectric layers. Through experiments, circuit modeling, and defect‐based simulations, a universal framework is established to engineer large memory windows without altering ...
Prasanna Venkatesan +21 more
wiley +1 more source
IEEE Journal of the Electron Devices SocietyRandom telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift in
Eunseok Oh, Hyungcheol Shin
doaj +1 more source
Particle Computation: Complexity, Algorithms, and Logic
, 2017 We investigate algorithmic control of a large swarm of mobile particles (such as robots, sensors, or building material) that move in a 2D workspace using a global input signal (such as gravity or a magnetic field). We show that a maze of obstacles to the
Becker, Aaron T. +4 more
core +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source