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Recent Progress on 3D NAND Flash Technologies [PDF]

open access: yesElectronics (Switzerland), 2021
Since 3D NAND was introduced to the industry with 24 layers, the areal density has been successfully increased more than ten times, and has exceeded 10 Gb/mm2 with 176 layers. The physical scaling of XYZ dimensions including layer stacking and footprint scaling enabled the density scaling. Logical scaling has been successfully realized, too.
Akira Goda
exaly   +2 more sources

Random Telegraph Noise in 3D NAND Flash Memories [PDF]

open access: yesMicromachines, 2021
In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the ...
Alessandro S. Spinelli   +3 more
doaj   +3 more sources

3D NAND Flash Based on Planar Cells [PDF]

open access: yesComputers, 2017
In this article, the transition from 2D NAND to 3D NAND is first addressed, and the various 3D NAND architectures are compared. The article carries out a comparison of 3D NAND architectures that are based on a “punch-and-plug” process—with gate-all ...
Andrea Silvagni
doaj   +2 more sources

Architecture and Process Integration Overview of 3D NAND Flash Technologies

open access: yesApplied Sciences (Switzerland), 2021
In the past few decades, NAND flash memory has been one of the most successful nonvolatile storage technologies, and it is commonly used in electronic devices because of its high scalability and reliable switching properties.
Geun Ho Lee, Sungmin Hwang, Junsu Yu
exaly   +3 more sources

Channel Modeling and Quantization Design for 3D NAND Flash Memory

open access: yesEntropy, 2023
As the technology scales down, two-dimensional (2D) NAND flash memory has reached its bottleneck. Three-dimensional (3D) NAND flash memory was proposed to further increase the storage capacity by vertically stacking multiple layers.
Cheng Wang   +5 more
doaj   +3 more sources

A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories [PDF]

open access: yesMicromachines, 2021
Data randomization has been a widely adopted Flash Signal Processing technique for reducing or suppressing errors since the inception of mass storage platforms based on planar NAND Flash technology.
Michele Favalli   +4 more
doaj   +3 more sources

Architectural and Integration Options for 3D NAND Flash Memories [PDF]

open access: yesComputers, 2017
Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in ...
Rino Micheloni   +3 more
doaj   +3 more sources

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

open access: yesComputers, 2017
We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field.
Alessandro Sottocornola Spinelli   +2 more
exaly   +3 more sources

Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization

open access: yesIEEE Journal of the Electron Devices Society, 2022
In flash memory technology, mechanical stress is considered as one of the major factors that can influence the device performance. Furthermore, mechanical stress can have a greater impact on the electrical performance in 3D NAND than in 2D NAND because ...
Eun-Kyeong Jang   +4 more
doaj   +1 more source

Analytical Modeling of 3D NAND Flash Cell With a Gaussian Doping Profile

open access: yesIEEE Access, 2022
The incessantly increasing demand for highly dense storage medium in this era of big-data has led to the development of 3D NAND Flash memories. 3D NAND Flash based SSDs have revolutionized edge storage and become an integral part of the data warehouses ...
Amit Kumar, Raushan Kumar, Shubham Sahay
doaj   +1 more source

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