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3D VG-Type NAND Flash Memories
2016The common feature among the different 3D NAND solutions is constituted by very deep vertical (z direction) etching steps that define the Flash cells geometries simultaneously. Transistor geometries are formed by the deep trench through a multiple polysilicon/oxide stack.
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Wafer Thinning and Dicing Technology for 3D Nand Flash
2019 China Semiconductor Technology International Conference (CSTIC), 2019It is a main stream for 3-dimensional (3D) NAND flash which has the advantage of large storage capacity, excellent and reliable performance. Several different wafer architectures for 3D NAND flash including BICS (Bit Cost Scalable), TACT (Terabit Cell Array Transistor) and VG (Vertical Gate) etc. are all in mass production mode in current market. These
Qian Ma +3 more
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3D NAND Flash Status and Trends
2022 IEEE International Memory Workshop (IMW), 2022Lars Heineck, Jin Liu
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Study on cell shape in 3D NAND flash memory
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2015All kinds of cell structures are appeared in 3D NAND flash technologies and all seem to be promising. In this paper, detail comparisons among the cell structures of them are presented. The theoretical derivation and simulation results both support that the cylindrical cell structure has better program/erase speed and memory window.
Wei Feng, Nine Deng
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Full 3D string-level simulation of NAND flash device
2008 International Conference on Simulation of Semiconductor Processes and Devices, 2008We present results of full 3D sting-level process and device simulation for a typical 60nm NAND flash device, whose read/program/erase characteristics are successfully simulated using the quasi-steady state simulation method. Self boosting and local-self boosting phenomena are also successfully simulated in string-level applying realistic pulse waves ...
U.-H. Kwon +4 more
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3D-NAND Flash and Its Manufacturing Process
2016Flash memory chips are nonvolatile memory (NVM) chips, which can keep memory without power supply. In comparison, DRAM is volatile memory and needs a power supply. Flash memory chips, especially NAND flash memory chips, are commonly used in universal serial bus (USB) drives, secure digital (SD) cards, and SSDs.
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3-Dimensional Terraced NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array
IEICE Transactions on Electronics, 2009We propose a 3-dimensional terraced NAND flash memory. It has a vertical channel so it is possible to make a long enough channel in 1F 2 size. And it has 3-dimensional structure whose channel is connected vertically along with two stairs. So we can obtain high density as in the stacked array structure, without silicon stacking process.
Yoon KIM +6 more
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Error Generation for 3D NAND Flash Memory
2022 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2022Weihua Liu +4 more
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Scaling Perspectives on 3D NAND Flash
Extended Abstracts of the 2022 International Conference on Solid State Devices and Materials, 2022openaire +1 more source