Results 11 to 20 of about 5,102 (147)

Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory

Micromachines, 2021
In contrast to conventional 2-dimensional (2D) NAND flash memory, in 3D NAND flash memory, cell-to-cell interference stemming from parasitic capacitance between the word-lines (WLs) is difficult to control because the number of WLs, achieved for better ...
Woo-Jin Jung, Jun-Young Park
doaj   +1 more source

Modeling of 3D NAND Characteristics for Cross‐Temperature by Using Graph Neural Network and Its Application

Advanced Intelligent Systems, 2023
Herein, the impact of cross‐temperature on 3D NAND flash memory is modeled by considering adjacent cells using machine learning. The cells comprising NAND flash memory exhibit diverse states and connectivity patterns.
Kyeongrae Cho, Jeong-Sik Lee, Chanyang Park, Hyeok Yun, Hyundong Jang, Seungjoon Eom, Min Sang Park, Hyun-Chul Choi, Rock-Hyun Baek   +8 more
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Analytical Modeling of Threshold Voltage and Subthreshold Slope for 3-D NAND Flash Memory With a Non-Uniform Doping Profile

IEEE Journal of the Electron Devices Society, 2023
The emergence of data-driven technologies including Internet of Things (IoT), artificial intelligence (AI), and cloud computing has led to a surge in data generation and mining.
Amit Kumar, Shubham Sahay
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3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage

Nanomaterials, 2022
As a strong candidate for computing in memory, 3D NAND flash memory has attracted great attention due to the high computing efficiency, which outperforms the conventional von-Neumann architecture. To ensure 3D NAND flash memory is truly integrated in the
Xinyue Yu, Zhongyuan Ma, Zixiao Shen, Wei Li, Kunji Chen, Jun Xu, Ling Xu   +6 more
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Self-Learning Hot Data Prediction: Where Echo State Network Meets NAND Flash Memories [PDF]

, 2020
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new ...
Ai, Jiaqiu, Fang, Xiaoxin, Luo, Qiwu, Sun, Yichuang, Yang, Chunhua   +4 more
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Hydrogen Source and Diffusion Path for Poly-Si Channel Passivation in Xtacking 3D NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2020
Poly-Si channels need well passivated by using hydrogen passivation process in 3D NAND flash memories for better poly-Si quality with low trap density.
Xinshuai Shen, Zhiliang Xia, Tao Yang, Lei Liu, Jinwen Dong, Wenxi Zhou, Chunlong Li, Zongliang Huo   +7 more
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A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2022
Experimental results indicate that the conventional program suspend scheme in 3D NAND flash memory chip can generate unexpected additional read fail bits and reduce the reliability of 3D NAND flash memory. These extra read fail bits are observed when the
Zhichao Du, Zhipeng Dong, Kaikai You, Xinlei Jia, Ye Tian, Yu Wang, Zhaochun Yang, Xiang Fu, Fei Liu, Qi Wang, Lei Jin, Zongliang Huo   +11 more
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Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories

Micromachines, 2021
Temperature effects should be well considered when designing flash-based memory systems, because they are a fundamental factor that affect both the performance and the reliability of NAND flash memories.
Fei Chen, Bo Chen, Hongzhe Lin, Yachen Kong, Xin Liu, Xuepeng Zhan, Jiezhi Chen   +6 more
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Self-Adaption of the GIDL Erase Promotes Stacking More Layers in 3D NAND Flash

Micromachines, 2023
The bit density is generally increased by stacking more layers in 3D NAND Flash. Gate-induced drain leakage (GIDL) erase is a critical enabler in the future development of 3D NAND Flash.
Tao Yang, Bao Zhang, Qi Wang, Lei Jin, Zhiliang Xia   +4 more
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Reliable and energy-efficient 3D NAND flash storage system design using run-time device and system interaction [PDF]

, 2023
NAND Flash memory is a non-volatile solid-state data storage technology widely used in electronic devices such as smartphones, tablets, laptops, digital cameras, USB drives, solid-state drives (SSDs), autonomous vehicles, space applications, and data ...
Raquibuzzaman, Md
core   +1 more source