Results 51 to 60 of about 5,102 (147)

Systematic Analysis of Spacer and Gate Length Scaling on Memory Characteristics in 3D NAND Flash Memory

Applied Sciences
This study investigates the impact of oxide/nitride (ON) pitch scaling on the memory performance of 3D NAND flash memory. We aim to enhance 3D NAND flash memory by systematically reducing the spacer length (Ls) and gate length (Lg) to achieve improved ...
Hee Young Bae, Seul Ki Hong, Jong Kyung Park   +2 more
doaj   +1 more source

Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider V_th Window in 3D NAND Flash Using a Machine-Learning Method

Nanomaterials, 2022
A machine-learning (ML) technique was used to optimize the energetic-trap distributions of nano-scaled charge trap nitride (CTN) in 3D NAND Flash to widen the threshold voltage (Vth) window, which is crucial for NAND operation.
Kihoon Nam, Chanyang Park, Jun-Sik Yoon, Hyeok Yun, Hyundong Jang, Kyeongrae Cho, Ho-Jung Kang, Min-Sang Park, Jaesung Sim, Hyun-Chul Choi, Rock-Hyun Baek   +10 more
doaj   +1 more source

Using 3D NAND Flash Memory in SSDs to Improve Storage and Performance [PDF]

, 2020
[excerpt] In the rapid development process of data storage, 3D NAND is the next generation of this technology in which the semiconductor flash cells of the solid-state drive (SSD) are stacked vertically to increase storage density and read / write ...
Welch, Daniel
core   +1 more source

Flexible Memory: Progress, Challenges, and Opportunities

Advanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan, Sen Chen, Minghui Guo, Ziliang Cui, Yujie Du, Jing Liu   +5 more
wiley   +1 more source

Amber: Enabling Precise Full-System Simulation with Detailed Modeling of All SSD Resources

, 2018
SSDs become a major storage component in modern memory hierarchies, and SSD research demands exploring future simulation-based studies by integrating SSD subsystems into a full-system environment.
Choi, Wonil, Gouk, Donghyun, Jung, Myoungsoo, Kandemir, Mahmut, Kim, Nam Sung, Koh, Sungjoon, Kwon, Miryeong, Zhang, Jie   +7 more
core   +1 more source

Cryogenic Neuromorphic Synaptic Behavior in 180 nm Silicon Transistors for Emerging Computing Systems

Advanced Intelligent Systems, EarlyView.
This study investigates the neuromorphic plasticity behavior of 180 nm bulk complementary metal oxide semiconductor (CMOS) transistors at cryogenic temperatures. The observed hysteresis data reveal a signature of synaptic behavior in CMOS transistors at 4 K.
Fiheon Imroze, Bhavani Yalagala, Naveen Kumar, Mostafa Elsayed, Meraj Ahmad, Robert Graham, Vihar Georgiev, Hadi Heidari, Martin Weides   +8 more
wiley   +1 more source

Novel Pattern-Centric Solution for XtackingTM AFM Metrology

Journal of Microelectronic Manufacturing, 2019
3D NAND (three-dimensional NAND type) has rapidly become the standard technology for enterprise flash memories, and is also gaining widespread use in other applications.
Sicong Wang, Jian Mi, Abhishek Vikram, Gao Xu, Guojie Chen, Liming Zhang, Pan Liu   +6 more
doaj   +1 more source

Analysis and Comparation of SSD and HDD Technologies [PDF]

, 2015
Import 22/07/2015Jedním z faktorů, který limituje efektivní činnost počítačové jednotky, je výkonnost její klíčové součásti – pevného disku (hardwaru). Proto se výzkum v oblasti informačních technologií soustřeďuje na problematiku kapacity, rychlosti a ...
Hansel, Lukáš
core  

Transient Analysis of Warm Electron Injection Programming of Double Gate SONOS Memories by means of Full Band Monte Carlo Simulation

, 2008
In this paper we investigate "Warm Electron Injection" as a mechanism for NOR programming of double-gate SONOS memories through 2D full band Monte Carlo simulations.
Furnemont A., G. Giusi, G. Iannaccone, Hagenbeck R., Han Z., Lin H., Lombardo S., Ohkura Y., Pang H., Razafmdramora J., U. Ravaioli, Vianello E., Yih C. M.   +12 more
core   +1 more source

Investigation of the Connection Schemes between Decks in 3D NAND Flash

Micromachines, 2023
Dual-deck stacking technology is an effective solution for solving the contradiction between the demand for increasing storage layers and the challenge of the deep hole etching process in 3D NAND flash. The connection scheme between decks is a key technology for the dual-deck structure.
Jianquan Jia, Lei Jin, Kaikai You, Anyi Zhu   +3 more
openaire   +3 more sources