Channel Modeling and Quantization Design for 3D NAND Flash Memory. [PDF]
Entropy (Basel), 2023 As the technology scales down, two-dimensional (2D) NAND flash memory has reached its bottleneck. Three-dimensional (3D) NAND flash memory was proposed to further increase the storage capacity by vertically stacking multiple layers.
Wang C +5 more
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3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage. [PDF]
Nanomaterials (Basel), 2022 As a strong candidate for computing in memory, 3D NAND flash memory has attracted great attention due to the high computing efficiency, which outperforms the conventional von-Neumann architecture. To ensure 3D NAND flash memory is truly integrated in the
Yu X +6 more
europepmc +2 more sources
Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory. [PDF]
Micromachines (Basel), 2021 In contrast to conventional 2-dimensional (2D) NAND flash memory, in 3D NAND flash memory, cell-to-cell interference stemming from parasitic capacitance between the word-lines (WLs) is difficult to control because the number of WLs, achieved for better ...
Jung WJ, Park JY.
europepmc +2 more sources
Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors. [PDF]
Sensors (Basel), 2023 Three-dimensional NAND flash memory is widely used in sensor systems as an advanced storage medium that ensures system stability through fast data access. However, in flash memory, as the number of cell bits increases and the process pitch keeps scaling,
Fan H +6 more
europepmc +2 more sources
Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory [PDF]
Micromachines (Basel), 2023 The instability in threshold voltage (VTH) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated.
Go D +6 more
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Architecture and Process Integration Overview of 3D NAND Flash Technologies
Applied Sciences (Switzerland), 2021 In the past few decades, NAND flash memory has been one of the most successful nonvolatile storage technologies, and it is commonly used in electronic devices because of its high scalability and reliable switching properties.
Geun Ho Lee, Sungmin Hwang, Junsu Yu
exaly +3 more sources
Controlling the Carrier Injection Efficiency in 3D Nanocrystalline Silicon Floating Gate Memory by Novel Design of Control Layer. [PDF]
Nanomaterials (Basel), 2023 Three-dimensional NAND flash memory with high carrier injection efficiency has been of great interest to computing in memory for its stronger capability to deal with big data than that of conventional von Neumann architecture.
Hu H +8 more
europepmc +2 more sources
Modeling methodology for thermo-structural analysis of V-NAND flash memory structure. [PDF]
Sci RepThis study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect.
Kim Y, Ryu S, Lee S.
europepmc +2 more sources
Impact of Program-Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability. [PDF]
Micromachines (Basel)Three-dimensional charge-trapping (CT) NAND flash memory has attracted extensive attention owing to its unique merits, including huge storage capacities, large memory densities, and low bit cost.
Zheng X +6 more
europepmc +2 more sources
Wordline Input Bias Scheme for Neural Network Implementation in 3D-NAND Flash. [PDF]
Biomimetics (Basel)In this study, we propose a neuromorphic computing system based on a 3D-NAND flash architecture that utilizes analog input voltages applied through wordlines (WLs).
Hwang H, Kim G, Yu D, Kim H.
europepmc +2 more sources