Results 21 to 30 of about 4,160 (185)

Self-Learning Hot Data Prediction: Where Echo State Network Meets NAND Flash Memories [PDF]

, 2020
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new ...
Ai, Jiaqiu, Fang, Xiaoxin, Luo, Qiwu, Sun, Yichuang, Yang, Chunhua   +4 more
core   +2 more sources

Analytical Modeling of Threshold Voltage and Subthreshold Slope for 3-D NAND Flash Memory With a Non-Uniform Doping Profile

IEEE Journal of the Electron Devices Society, 2023
The emergence of data-driven technologies including Internet of Things (IoT), artificial intelligence (AI), and cloud computing has led to a surge in data generation and mining.
Amit Kumar, Shubham Sahay
doaj   +1 more source

Band and Field Coengineered Charge Trap Memristor via Au Nanoparticle Layer for Programming Speed Enhancement. [PDF]

Small Sci
The Pt/Ta2O5/Nb2O5−x/Au nanoparticles/Al2O3−y/Ti charge trap memristor (CTM) demonstrates faster and energy‐efficient operation compared to its counterpart without Au nanoparticles. This improvement is attributed to the synergistic effects of localized electric field enhancement and optimized electron trapping via band engineering. The findings present
Kim G, Park J, Park W, Ko M, Lee MG, Cho H, Kim KM.   +6 more
europepmc   +2 more sources

Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories

Micromachines, 2021
Temperature effects should be well considered when designing flash-based memory systems, because they are a fundamental factor that affect both the performance and the reliability of NAND flash memories.
Fei Chen, Bo Chen, Hongzhe Lin, Yachen Kong, Xin Liu, Xuepeng Zhan, Jiezhi Chen   +6 more
doaj   +1 more source

Hydrogen Source and Diffusion Path for Poly-Si Channel Passivation in Xtacking 3D NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2020
Poly-Si channels need well passivated by using hydrogen passivation process in 3D NAND flash memories for better poly-Si quality with low trap density.
Xinshuai Shen, Zhiliang Xia, Tao Yang, Lei Liu, Jinwen Dong, Wenxi Zhou, Chunlong Li, Zongliang Huo   +7 more
doaj   +1 more source

A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2022
Experimental results indicate that the conventional program suspend scheme in 3D NAND flash memory chip can generate unexpected additional read fail bits and reduce the reliability of 3D NAND flash memory. These extra read fail bits are observed when the
Zhichao Du, Zhipeng Dong, Kaikai You, Xinlei Jia, Ye Tian, Yu Wang, Zhaochun Yang, Xiang Fu, Fei Liu, Qi Wang, Lei Jin, Zongliang Huo   +11 more
doaj   +1 more source

3D NAND flash memory based on junction-less a-Si:H channel with high on/off current ratio

AIP Advances, 2022
As the key hardware unit of computing in memory, 3D NAND flash memory has been the focus of the artificial intelligence (AI) era due to its high efficiency in processing massive and diverse data, which is superior to the conventional von-Neumann ...
Xinyue Yu, Zhongyuan Ma, Kangmin Leng, Tong Chen, Wei Li, Kunji Chen, Jun Xu, Ling Xu   +7 more
doaj   +1 more source

3D-NAND flash memory based neuromorphic computing

Acta Physica Sinica, 2022
A neuromorphic chip is an emerging AI chip. The neuromorphic chip is based on non-Von Neumann architecture, and it simulates the structure and working principle of the human brain. Compared with non-Von Neumann architecture AI chips, the neuromorphic chips have significant improvement of efficiency and energy consumption advantages.
Yang-Yang Chen, Yu-Hui He, Xiang-Shui Miao, Dao-Hong Yang   +3 more
openaire   +1 more source

Vertical Self-Rectifying Memristive Arrays for Page-Wise Parallel Logic and Arithmetic Processing. [PDF]

Adv Mater
This study proposes a page‐wise logic‐in‐memory architecture realized in a 3D vertical resistvie random‐access memory array of self‐rectifying memristors. By introducing intra‐ and inter‐page logic primitives, the system enables Boolean and arithmetic operations to be executed directly within the memory.
Son K, Cho JM, Shin DH, Kim YR, Ghenzi N, Cheong S, Kim BS, Lee JK, Kim S, Choi W, Lee SH, Han J, Hwang CS.   +12 more
europepmc   +2 more sources

Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature Write–Read Operations in 3-D NAND Flash

IEEE Journal of the Electron Devices Society, 2021
Reading data at a temperature which different from writing can cause a large number of failed bits in 3D NAND Flash memory. In this work, the threshold voltage (Vth) temperature effect of 3D NAND flash memory cell was investigated and a method was ...
Dan Wu, Hailong You, Xiaoguang Wang, Shujing Zhong, Qi Sun   +4 more
doaj   +1 more source