Results 51 to 60 of about 4,160 (185)

Self-Organizing Mapping Neural Network Implementation Based on 3-D NAND Flash for Competitive Learning

open access: yesIEEE Journal of the Electron Devices Society
Self-organizing Map (SOM) neural network is a prominent algorithm in unsupervised machine learning, which is widely used for data clustering, high-dimensional visualization, and feature extraction.
Anyi Zhu   +4 more
doaj   +1 more source

Materials Design Principles for Large Memory Windows: Coercive Voltage Engineering in Ferroelectric– Dielectric Heterostructures

open access: yesAdvanced Electronic Materials, EarlyView.
Coercive voltage enhancement in hafnia‐based ferroelectric–dielectric heterostructures is shown to originate from leakage‐governed voltage division between the ferroelectric and dielectric layers. Through experiments, circuit modeling, and defect‐based simulations, a universal framework is established to engineer large memory windows without altering ...
Prasanna Venkatesan   +21 more
wiley   +1 more source

Smart Electrical Screening Methodology for Channel Hole Defects of 3D Vertical NAND (VNAND) Flash Memory

open access: yesEng
In order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim   +2 more
doaj   +1 more source

Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines [PDF]

open access: yes, 2010
Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems.
Derek Abbott   +6 more
core  

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Channel-Stacked NAND Flash Memory with High-κ Charge Trapping Layer for High Scalability [PDF]

open access: yes, 2016
학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2016. 2. 박병국.Exploding demands for mobile devices induce the drastic expansion of the market of NAND flash memory as high density storage devices.
서주연
core  

Flexible Memory: Progress, Challenges, and Opportunities

open access: yesAdvanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan   +5 more
wiley   +1 more source

Improvement of memory performance of 3-D NAND flash memory with retrograde channel doping

open access: yesMemories - Materials, Devices, Circuits and Systems, 2023
The examination of the effect of retrograde channel doping on reliability and performance of 3-D junction-free NAND based flash memory is done for this paper.
Deepika Gupta   +3 more
doaj   +1 more source

Cryogenic Neuromorphic Synaptic Behavior in 180 nm Silicon Transistors for Emerging Computing Systems

open access: yesAdvanced Intelligent Systems, EarlyView.
This study investigates the neuromorphic plasticity behavior of 180 nm bulk complementary metal oxide semiconductor (CMOS) transistors at cryogenic temperatures. The observed hysteresis data reveal a signature of synaptic behavior in CMOS transistors at 4 K.
Fiheon Imroze   +8 more
wiley   +1 more source

NAND Flash Memory Characterization [PDF]

open access: yes, 2019
The NAND technology has become a popular research area and implementation choice due to its non-volatile flash memory characteristics. There are many engineering challenges when it comes to NAND technology.
Heer, Tanvir Singh
core  

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