Results 61 to 70 of about 4,160 (185)
A fully complementary metal–oxide–semiconductor process‐compatible novel 3‐T embedded NOR flash is demonstrated on a 28 nm fully depleted silicon‐on‐insulator platform. The proposed memory achieves record‐fast 28‐long‐term potentiation and depression , offering high‐speed and highly reliable synaptic behavior for online training in neuromorphic ...
Jae Seung Woo +4 more
wiley +1 more source
A Review of Cell Operation Algorithm for 3D NAND Flash Memory
The size of the memory market is expected to continue to expand due to the digital transformation triggered by the fourth industrial revolution. Among various types of memory, NAND flash memory has established itself as a major data storage medium based ...
Jong Kyung Park, Sarah Eunkyung Kim
doaj +1 more source
Amber: Enabling Precise Full-System Simulation with Detailed Modeling of All SSD Resources
SSDs become a major storage component in modern memory hierarchies, and SSD research demands exploring future simulation-based studies by integrating SSD subsystems into a full-system environment.
Choi, Wonil +7 more
core +1 more source
Large‐scale Hopfield neural networks (HNNs) for associative computing are implemented using vertical NAND (VNAND) flash memory. The proposed VNAND HNN with the asynchronous update scenario achieve robust image restoration performance despite fabrication variations, while significantly reducing chip area (≈117× smaller than resistive random‐access ...
Jin Ho Chang +4 more
wiley +1 more source
Novel Pattern-Centric Solution for XtackingTM AFM Metrology
3D NAND (three-dimensional NAND type) has rapidly become the standard technology for enterprise flash memories, and is also gaining widespread use in other applications.
Sicong Wang +6 more
doaj +1 more source
Methods for Threshold Voltage Setting of String Select Transistors in Channel Stacked NAND Flash Memory [PDF]
학위논문 (박사)-- 서울대학교 대학원 공과대학 전기·컴퓨터공학부, 2017. 8. 박병국.Since recent mobile electronic devices such as tablets, laptops, smartphones, or solid-state drives (SSDs) have started to adopt the NAND flash memory as their main data storage device, the demand for ...
김도빈
core
In this paper we investigate "Warm Electron Injection" as a mechanism for NOR programming of double-gate SONOS memories through 2D full band Monte Carlo simulations.
Furnemont A. +12 more
core +1 more source
A Behavioral Compact Model of 3D NAND Flash Memory
We present a behavioral compact model of 3D NAND flash memory for integrated circuits and system-level applications. This model is easy to implement, computationally efficient, fast, accurate and effectively accounts for the different parasitic capacitance coupling effects applicable to the 3D geometry of the vertical channel Macaroni body charge-trap ...
Sahay, Shubham, Strukov, Dmitri
openaire +2 more sources
Review of Memristors for In‐Memory Computing and Spiking Neural Networks
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari +2 more
wiley +1 more source
A fully integrated analog processing‐in‐memory system is demonstrated, combining charge‐trap flash synapse arrays with a successive integration‐and‐rescaling neuron circuit. The architecture performs bit‐sliced analog accumulation with high linearity and low power, achieving efficient and scalable analog in‐memory computing and bridging device‐level ...
Sojoong Kim +4 more
wiley +1 more source

