Results 71 to 80 of about 4,160 (185)
Analysis and Comparation of SSD and HDD Technologies [PDF]
Import 22/07/2015Jedním z faktorů, který limituje efektivní činnost počítačové jednotky, je výkonnost její klíčové součásti – pevného disku (hardwaru). Proto se výzkum v oblasti informačních technologií soustřeďuje na problematiku kapacity, rychlosti a ...
Hansel, Lukáš
core
Duality between erasures and defects
We investigate the duality of the binary erasure channel (BEC) and the binary defect channel (BDC). This duality holds for channel capacities, capacity achieving schemes, minimum distances, and upper bounds on the probability of failure to retrieve the ...
Kim, Yongjune, Kumar, B. V. K. Vijaya
core +1 more source
Keggin‐type Al‐POM‐coated silica achieves selective surface oxidation of amorphous carbon through electrostatic attraction and proton‐coupled oxidation, tailoring interfacial properties for lithium‐ion batteries and semiconductor processes. ABSTRACT Amorphous carbon is widely used in energy storage and semiconductor technologies, where surface ...
Ganggyu Lee +13 more
wiley +1 more source
Data storage in electronic devices has been revolutionised by 3D NAND flash memory. However, polycrystalline silicon and grain boundaries offer issues that greatly affect memory performance in terms of string current and Program-Erase Threshold Voltage ...
Dikendra Verma +2 more
doaj +1 more source
Processing‐in‐memory (PIM) architectures based on memristors offer significant potential for low‐power computation and the realization of novel computing paradigms by performing logic operations directly within memory. This review summarizes recent advances in memristor‐based logic techniques, with particular emphasis on reliability considerations and ...
Thomas Neuner +5 more
wiley +1 more source
Random telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift in
Eunseok Oh, Hyungcheol Shin
doaj +1 more source
Ferroelectric HZO Thin Films for FEFETs: Crystal Structure‐Device Performance Relationship
Crystal Structure of HZO Thin Films Methods of Thin Film Deposition 1T‐FeFET Design Influence on Ferroelectric Properties FeFET Applications Recent Advances and Challenges ORTHORHOMBIC HEARTBEAT. Abstract The rapid development of hafnium zirconium oxide (HZO) thin films has established ferroelectric field‐effect transistors (FeFETs) as strong ...
Harsha Ragini Aturi +2 more
wiley +1 more source
Building Reliable Massive Capacity SSDs through a Flash Aware RAID-Like Protection
The demand for mass storage devices has become an inevitable consequence of the explosive increase in data volume. The three-dimensional (3D) vertical NAND (V-NAND) and quad-level cell (QLC) technologies rapidly accelerate the capacity increase of flash ...
Jaeho Kim, Jung Kyu Park
doaj +1 more source
This review surveys how PVDF's ferroelectric behavior emerges from structure, processing, and phase engineering, and how it translates into memory, neuromorphic, and sensing technologies. Performance is benchmarked against leading inorganic ferroelectrics, while composites and hybrid systems are discussed as routes to improved endurance and ...
Achidi Frick +3 more
wiley +1 more source
Photodoping has emerged as a promising alternative, offering non‐destructive, reversible, and highly tunable performance modulation of atomically thin two‐dimensional (2D) materials while overcoming the limitations of traditional silicon‐based doping methods.
Zhe Zhang +7 more
wiley +1 more source

