Results 91 to 100 of about 261,592 (260)

Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region

APL Materials, 2013
In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substrates were thermally oxidized under different conditions of time and pressure.
E. Pitthan, L. D. Lopes, R. Palmieri, S. A. Corrêa, G. V. Soares, H. I. Boudinov, F. C. Stedile   +6 more
doaj   +1 more source

A Commercial-Simulator-Based Numerical-Analysis Methodology for 4H-SiC Power Devices Formed on Misoriented (0001) Substrates

IEEE Journal of the Electron Devices Society, 2015
A commercial-simulator-based numerical-analysis methodology for 4H-SiC power devices formed on misoriented (0001) substrates is proposed and applied for analyzing avalanche breakdown of floating-field-ring-terminated p-n diodes.
Kazuhiro Mochizuki, Hiroyuki Okino, Hiroyuki Matsushima, Renichi Yamada   +3 more
doaj   +1 more source

Dependence of the incorporated boron concentration near SiO2/4H–SiC interface on trap passivation reduction

AIP Advances
By systematically varying the boron concentration near the oxide/4H–SiC interface within a specifically designed boron-diffusion layer oxide structure, this paper explores the influence of boron concentration on interface state density and near-interface
Runze Wang, Munetaka Noguchi, Hiroshi Watanabe, Koji Kita   +3 more
doaj   +1 more source

Advanced Functional Materials Research: Paving the Way for Technological Innovation and Beyond

Small, EarlyView.
Huaping Zhao, Yong Lei
wiley   +1 more source

Improved MRD 4H-SiC MESFET with High Power Added Efficiency

Micromachines, 2019
An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology ...
Shunwei Zhu, Hujun Jia, Xingyu Wang, Yuan Liang, Yibo Tong, Tao Li, Yintang Yang   +6 more
doaj   +1 more source

Environment-friendly electrochemical mechanical polishing using solid polymer electrolyte/CeO2 composite pad for highly efficient finishing of 4H-SiC (0001) surface

, 2023
Junji Murata, Kenshin Hayama, Masaru Takizawa   +2 more
openalex   +1 more source

Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations

AIP Advances, 2014
Polytype stability is very important for high quality SiC single crystal growth. However, the growth conditions for the 4H, 6H and 15R polytypes are similar, and the mechanism of polytype stability is not clear. The kinetics aspects, such as surface-step
Hui-Jun Guo, Wei Huang, Xi Liu, Pan Gao, Shi-Yi Zhuo, Jun Xin, Cheng-Feng Yan, Yan-Qing Zheng, Jian-Hua Yang, Er-Wei Shi   +9 more
doaj   +1 more source

4H‐SiC trench MOSFET with integrated fast recovery MPS diode [PDF]

, 2017
Tianxiang Dai, C.W. Chan, Xc Deng, Huaping Jiang, Peter Michael Gammon, Michael R. Jennings, Philip Mawby   +6 more
openalex   +1 more source

Design, Fabrication, Characterization, and Evaluation of X-ray Detectors Based on n-type 4H-SiC Epilayers [PDF]

, 2012
Krishna C. Mandal, Peter G. Muzykov, J. R. Terry   +2 more
openalex   +1 more source

Immobilization of Partial Dislocations Bounding Double Shockley Stacking Faults in 4h-Sic Observed by in Situ Synchrotron X-Ray Topography

, 2021
Fumihiro Fujie, Shunta Harada, Hiromasa Suo, Balaji Raghothamachar, Michael Dudley, Kenji Hanada, H. Koizumi, Tomohisa Kato, Miho Tagawa, Toru Ujihara   +9 more
openalex   +1 more source