4H‐SiC photoconductive semiconductor based ultra‐wideband microwave generation with MHz tunable repetition rate [PDF]
, 2022 Xu Chu +5 more
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Applied Physics Express4H-SiC is a pivotal semiconductor for high-power, high-temperature devices, where Auger recombination significantly affects performance under high carrier injection. While previously studied in lightly doped material, data for heavily doped n-type 4H-SiC
Endong Zhang +2 more
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Novel Power Si/4H-SiC Heterojunction Tunneling Transistor (HETT)
, 2006 Tetsuya Hayashi +5 more
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Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al
, 2020 Gabriel Ferro, Didier Chaussende
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Silicon oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Anodization Method [PDF]
, 2007 Kai-Chieh Chuang, Jenn‐Gwo Hwu
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Influence Of Growth Conditions on Irradiation Induced Defects in 4H-SiC
, 2007 Ioana Pintilie +4 more
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Thermal properties of AlGaN/GaN high electron mobility transistors on 4H and 6H SiC substrates [PDF]
, 2014 N. Killat +3 more
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Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser [PDF]
, 2020 Jiayu Liu +12 more
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Simulation and Analysis of Static Temperature Characteristics of 4H-SiC MOSFET
机车电传动, 2020 SiC materials have excellent properties such as large forbidden band width, high critical electric field, high carrier saturation drift speed and high thermal conductivity, making them widely used in high temperature, high voltage, high power and other ...
Liang ZENG +5 more
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DFT modelling of the edge dislocation in 4H-SiC [PDF]
, 2019 Jan Łażewski +7 more
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