Results 101 to 110 of about 19,738 (219)

Synchrotron Radiation for Quantum Technology

Advanced Functional Materials, Volume 36, Issue 15, 19 February 2026.
Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader, Sakura Pascarelli, Klaus Attenkofer, Anna A. Makarova, Karsten Holldack, Kai Rossnagel, Kristiaan Temst, George Kourousias, Stefano Carretta, Caterina Biscari, Helmut Dosch   +10 more
wiley   +1 more source

Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

Crystals, 2020
The diffusion welding (DW) is a comprehensive mechanism that can be extensively used to develop silicon carbide (SiC) Schottky rectifiers as a cheaper alternative to existing mainstream contact forming technologies.
Mehadi Hasan Ziko, Ants Koel, Toomas Rang, Muhammad Haroon Rashid   +3 more
doaj   +1 more source

Single-layer metallicity and interface magnetism of epitaxial graphene on SiC(000$\bar{1}$)

, 2011
We perform density functional theory calculations for the determination of the structural and electronic properties of epitaxial graphene on 4H-SiC(000$\bar{1}$). Using commensurate supercells that minimize non-physical stresses we show that, in contrast
Deretzis, I., La Magna, A.
core   +1 more source

Demonstration of the First 4H-SiC EUV Detector with Large Detection Area [PDF]

, 2005
Ultraviolet (UV) and Extreme Ultraviolet (EUV) detectors are very attractive in astronomy, photolithography and biochemical applications. For EUV applications, most of the semiconductor detectors based on PN or PIN structures suffer from the very short ...
Hu, Jun, Koeth, Timothy W., Xin, Xiaobin, Yan, Feng, Zhao, Jian H.   +4 more
core   +1 more source

Graphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates

, 2009
We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC).
A. F. Hebard, Neamen D. A., S. Tongay, Sze S. M., T. Schumann   +4 more
core   +1 more source

A Commercial-Simulator-Based Numerical-Analysis Methodology for 4H-SiC Power Devices Formed on Misoriented (0001) Substrates

IEEE Journal of the Electron Devices Society, 2015
A commercial-simulator-based numerical-analysis methodology for 4H-SiC power devices formed on misoriented (0001) substrates is proposed and applied for analyzing avalanche breakdown of floating-field-ring-terminated p-n diodes.
Kazuhiro Mochizuki, Hiroyuki Okino, Hiroyuki Matsushima, Renichi Yamada   +3 more
doaj   +1 more source

Growth and Characterization of 3C-SiC and 2H-AIN/GaN Films and Devices Produced on Step-Free 4H-SiC Mesa Substrates [PDF]

While previously published experimental results have shown that the step-free (0 0 0 1) 4H-SiC mesa growth surface uniquely enables radical improvement of 3C-SiC and 2H-AlN/GaN heteroepitaxial film quality (greater than 100-fold reduction in extended ...
Du, H., Neudeck, P. G., Skowronski, M., Spry, D. J., Trunek, A. J.   +4 more
core   +1 more source

Highly-ordered graphene for two dimensional electronics

, 2006
With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial graphene ...
Berger, C., Conrad, E. H., de Heer, W. A., Feng, R., First, P. N., Hass, J., Jeffrey, C. A., Li, T., Li, X., Song, Z.   +9 more
core   +1 more source

Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region

APL Materials, 2013
In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substrates were thermally oxidized under different conditions of time and pressure.
E. Pitthan, L. D. Lopes, R. Palmieri, S. A. Corrêa, G. V. Soares, H. I. Boudinov, F. C. Stedile   +6 more
doaj   +1 more source

Improved MRD 4H-SiC MESFET with High Power Added Efficiency

Micromachines, 2019
An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology ...
Shunwei Zhu, Hujun Jia, Xingyu Wang, Yuan Liang, Yibo Tong, Tao Li, Yintang Yang   +6 more
doaj   +1 more source