On-Orbit Performance of Pd/4H-SiC Schottky UV Detectors in a Low-Earth Orbit
, 2023 openalex +1 more source
Erratum: “Effects of interface state density on 4H-SiC n-channel field-effect mobility” [Appl. Phys. Lett. 104, 083516 (2014)] [PDF]
, 2015 Hironori Yoshioka +4 more
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Comparison of temperature-dependent resistivity of heavily Al- and N-codoped 4H-SiC grown by physical vapor transport and heavily Al-doped 4H-SiC grown by chemical vapor deposition [PDF]
, 2023 Atsuki Hidaka +9 more
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Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method
, 2006 L. Latu‐Romain +8 more
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Low On-Resistance in Normally-Off 4H-SiC Accumulation MOSFET
, 2005 Eiichi Okuno +4 more
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The effect of rotation on the macro-steps formation during 4H-SiC solution growth
, 2019 Shin Yunji +3 more
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Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC
, 2007 M. Obernhofer +5 more
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Research on Stress Variations During the 4H-SiC Indentation Process. [PDF]
Micromachines (Basel)Wang W, Lin S, Yu Y, Duan N.
europepmc +1 more source