Results 111 to 120 of about 19,738 (219)

Dependence of the incorporated boron concentration near SiO2/4H–SiC interface on trap passivation reduction

AIP Advances
By systematically varying the boron concentration near the oxide/4H–SiC interface within a specifically designed boron-diffusion layer oxide structure, this paper explores the influence of boron concentration on interface state density and near-interface
Runze Wang, Munetaka Noguchi, Hiroshi Watanabe, Koji Kita   +3 more
doaj   +1 more source

Effect of C-face 4H-SiC(0001) deposition on thermopower of single and multilayer graphene in AA, AB and ABC stacking

, 2014
The Seebeck coefficient in multilayer graphene is investigated within the density-functional theory, using the semiclassical Boltzmann equations and interpolating the bands in a maximally-localized Wannier functions basis set. We compare various graphene
Dominiak, Adam, Pizzi, Giovanni, Wierzbowska, Malgorzata   +2 more
core   +1 more source

Vector magnetometry using silicon vacancies in 4H-SiC at ambient conditions

, 2016
Point defects in solids promise precise measurements of various quantities. Especially magnetic field sensing using the spin of point defects has been of great interest recently.
Janzén, Erik, Kordina, Olof, Lee, Sang-Yun, Niethammer, Matthias, Ohshima, Takeshi, Son, Nguyen Tien, Stenberg, Pontus, Widmann, Matthias, Wrachtrup, Jörg   +8 more
core   +1 more source

Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations

AIP Advances, 2014
Polytype stability is very important for high quality SiC single crystal growth. However, the growth conditions for the 4H, 6H and 15R polytypes are similar, and the mechanism of polytype stability is not clear. The kinetics aspects, such as surface-step
Hui-Jun Guo, Wei Huang, Xi Liu, Pan Gao, Shi-Yi Zhuo, Jun Xin, Cheng-Feng Yan, Yan-Qing Zheng, Jian-Hua Yang, Er-Wei Shi   +9 more
doaj   +1 more source

Recent Results from Epitaxial Growth on Step Free 4H-SiC Mesas [PDF]

This paper updates recent progress made in growth, characterization, and understanding of high quality homoepitaxial and heteroepitaxial films grown on step-free 4H-SiC mesas.
Bassim, Nabil D., Du, Hui, Eddy, Charles R., Jr., Henry, Richard L., Holm, Ronald T., Mastro, Michael A., Neudeck, Philip G., Powell, J. Anthony, Skowronski, Marek, Spry, David J., Trunek, Andrew J., Twigg, Mark E.   +11 more
core   +1 more source

Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions

Applied Physics Express
4H-SiC is a pivotal semiconductor for high-power, high-temperature devices, where Auger recombination significantly affects performance under high carrier injection. While previously studied in lightly doped material, data for heavily doped n-type 4H-SiC
Endong Zhang, Hiroko Matsuyama, Masashi Kato   +2 more
doaj   +1 more source

Research on Stress Variations During the 4H-SiC Indentation Process. [PDF]

Micromachines (Basel)
Wang W, Lin S, Yu Y, Duan N.
europepmc   +1 more source

DFT Investigation of PFOS Interaction with 4H-SiC: A Feasibility Study for Environmental Sensing Applications. [PDF]

ACS Omega
Sookhak Lari K, Brown JJ, Reinhardt A, Qian B, Rayner JL, Davis GB.   +5 more
europepmc   +1 more source

Application of UV Laser for Ohmic Contact Formation on 4H-SiC. [PDF]

Materials (Basel)
Kubiak A, Wozny J, Bobowska I, Verdolotti A.   +3 more
europepmc   +1 more source

Optimization and Simulation on Gas Flow and Temperature Fields on the Homoepitaxial Growth of N-Doped 4H-SiC Wafers. [PDF]

Micromachines (Basel)
Zhang G, Li T, Liu Y, Sun J, Zhang S.
europepmc   +1 more source