Results 121 to 130 of about 19,738 (219)

Laser Processing of Ti Contacts for Ohmic Behavior on P‑Type 4H-SiC. [PDF]

ACS Appl Electron Mater
Vabres R, Bellocchi G, Bongiorno C, Vivona M, Roccaforte F, Badalà P, Mancuso P, Puglisi V, Rascunà S, Crupi I.   +9 more
europepmc   +1 more source

Structural Optimization and Trap Effects on the Output Performance of 4H-SiC Betavoltaic Cell. [PDF]

Nanomaterials (Basel)
Kim KM, Kang IM, Seo JH, Yoon YJ, Kim K.
europepmc   +1 more source

Oxygen-Plasma Defect Engineering of Epitaxial Graphene on 4H-SiC for Enhanced NO₂ Sensing. [PDF]

ACS Omega
Trinh XT, Nguyen AT, Nguyen TTH, Dang TQ, Tran HD, Nguyen PT, Dao TM, Truong LH, Le CQ, Pham TT, Nguyen-Si V, Ngo HT.   +11 more
europepmc   +1 more source

Numerical Simulation and Experimental Study on Picosecond Laser Polishing of 4H-SiC Wafer. [PDF]

Micromachines (Basel)
Yan Y, Cheng Y, Chen S, Tang Y, Zhang F, Gao P.   +5 more
europepmc   +1 more source

Formation of luminescent defects in 4H-SiC upon ion irradiation and ns laser annealing. [PDF]

Sci Rep
Zanelli G, Fontan I, Andrini G, Corte E, Nieto Hernández E, Varzi V, Amine NH, Sturari S, Redolfi E, Rigato V, Campostrini M, Traina P, Picollo F, Genovese M, Ditalia Tchernij S, Forneris J.   +15 more
europepmc   +1 more source

Modified divacancies in 4H-SiC

Modified divacancies in 4H-SiC
Divacancies near or at lattice defects in SiC, the PL5?PL7 photoluminescence centers, are known to have more favorable optical and spin properties for applications in quantum technology compared to the usual divacancies. These centers were previously predicted to be divacancies near stacking faults. Using electron paramagnetic resonance, we observe PL5,
openaire  

Atomic-Scale Revelation of Voltage-Modulated Electrochemical Corrosion Mechanism in 4H-SiC Substrate. [PDF]

Micromachines (Basel)
Luo Q, Lin D, Lu J, Ke C, Tian Z, Jiang F, Zhu J, Huang H.   +7 more
europepmc   +1 more source

Laser-Induced Liquid-Phase Boron Doping of 4H-SiC. [PDF]

Materials (Basel)
Kulkarni G, Bougdid Y, Sugrim CJ, Kumar R, Kar A.   +4 more
europepmc   +1 more source

Non-Destructive Evaluation of Damage and Electricity Characteristics in 4H-SiC Induced by Ion Irradiation via Raman Spectroscopy. [PDF]

Materials (Basel)
Dai H, Hou Z, Han X, Liang J, Jiao A, Wei Z, Wu C, Sun K, Liu Y, Wang X.   +9 more
europepmc   +1 more source

Extraction of Electron and Hole Drift Velocities in Thin 4H-SiC PIN Detectors Using High-Frequency Readout Electronics. [PDF]

Sensors (Basel)
Gsponer A, Onder S, Gundacker S, Burin J, Knopf M, Radmanovac D, Waid S, Bergauer T.   +7 more
europepmc   +1 more source