Results 21 to 30 of about 19,738 (219)
Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review [PDF]
Energies, 2019 This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular, the work compares the benefits and drawbacks of different techniques to assess the physical parameters describing the electronic properties and the current transport at ...
Fiorenza Patrick +2 more
openaire +2 more sources
Advanced Materials Interfaces, 2023 High‐efficiency and low‐loss processing is the mainstay to reduce the cost and deepen the application of 4H silicon carbide (4H‐SiC) wafers in high‐power and high‐frequency electronics.
Wenhao Geng +7 more
doaj +1 more source
Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures [PDF]
Bulletin of the Polish Academy of Sciences Technical Sciences, 2016 Abstract The paper presents the results of characterization of MOS structures with aluminum oxide layer deposited by ALD method on silicon carbide substrates. The effect of the application of thin SiO2 buffer layer on the electrical properties of the MOS structures with Al2O3 layer has been examined. Critical electric field values at the level of 7.5–8
A. Taube +7 more
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Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC
Micromachines, 2021 Single-crystal 4H-SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. A novel polishing technique that combines plasma electrolytic processing and mechanical polishing (PEP-MP)
Gaoling Ma +5 more
doaj +1 more source
Thermoresistance of p-Type 4H–SiC Integrated MEMS Devices for High-Temperature Sensing [PDF]
, 2019 There is an increasing demand for the development and integration of multifunctional sensing modules into power electronic devices that can operate in high temperature environments.
Dao, Dzung Viet +7 more
core +2 more sources
M-Center in Neutron-Irradiated 4H-SiC [PDF]
Crystals, 2021 We report on the metastable defects introduced in the n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation-induced defects. In addition to the carbon vacancy (Vc), silicon vacancy (Vsi) and carbon antisite-carbon
Ivana Capan +4 more
openaire +4 more sources
Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes [PDF]
, 2002 The avalanche multiplication and excess noise characteristics of thin 4H-SiC avalanche photodiodes with an i-region width of 0.1 µm have been investigated. The diodes are found to exhibit multiplication characteristics which change significantly when the
David, J.P.R. +6 more
core +1 more source
Nonlocal effects in thin 4H-SiC UV avalanche photodiodes [PDF]
, 2003 The avalanche multiplication and excess noise characteristics of 4H-SiC avalanche photodiodes with i-region widths of 0.105 and 0.285 mum have been investigated using 230-365-nm light, while the responsivities of the photodiodes at unity gain were ...
David, J.P.R. +6 more
core +1 more source
Thermal Behaviors and Optical Parametric Oscillation in 4H‐Silicon Carbide Integrated Platforms
Advanced Photonics Research, 2021 4H‐silicon carbide (SiC) integrated platforms have shown great potential in quantum and nonlinear photonics. However, the thermal properties of 4H‐SiC waveguides are still unknown, even though thermo‐optic effects can play an important role in ...
Xiaodong Shi +7 more
doaj +1 more source
High Single-Event Burnout Resistance 4H-SiC Junction Barrier Schottky Diode
IEEE Journal of the Electron Devices Society, 2021 This paper presents a single-event burnout (SEB) resistance method for 4H-SiC Junction Barrier Schottky Diode (JBS) under high bias voltage and linear energy transfer (LET) conditions.
Mao-Bin Li +5 more
doaj +1 more source