Results 21 to 30 of about 261,592 (260)
Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures [PDF]
Bulletin of the Polish Academy of Sciences Technical Sciences, 2016 Abstract The paper presents the results of characterization of MOS structures with aluminum oxide layer deposited by ALD method on silicon carbide substrates. The effect of the application of thin SiO2 buffer layer on the electrical properties of the MOS structures with Al2O3 layer has been examined. Critical electric field values at the level of 7.5–8
A. Taube +7 more
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Journal of Applied Physics, 2021 Advances in the growth processes of 4H-SiC epitaxial layers have led to the continued expansion of epilayer thickness, allowing for the detection of more penetrative radioactive particles. We report the fabrication and characterization of high-resolution
Joshua W. Kleppinger +3 more
semanticscholar +1 more source
Anisotropic Defect Distribution in He+-Irradiated 4h-Sic: Effect of Stress on Defect Distribution
Acta Materialia, 2021 Irradiation-induced anisotropic swelling in hexagonal α-SiC is known to degrade the mechanical properties of SiC; however, the associated physical mechanism and microstructural process remain insufficiently understood.
Subing Yang +3 more
semanticscholar +1 more source
M-Center in Neutron-Irradiated 4H-SiC [PDF]
Crystals, 2021 We report on the metastable defects introduced in the n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation-induced defects. In addition to the carbon vacancy (Vc), silicon vacancy (Vsi) and carbon antisite-carbon
Ivana Capan +4 more
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Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4H - SiC [PDF]
Physical Review Applied, 2020 Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum technology applications due to their excellent optical and spin properties.
P. Udvarhelyi +11 more
semanticscholar +1 more source
Thermal Behaviors and Optical Parametric Oscillation in 4H‐Silicon Carbide Integrated Platforms
Advanced Photonics Research, 2021 4H‐silicon carbide (SiC) integrated platforms have shown great potential in quantum and nonlinear photonics. However, the thermal properties of 4H‐SiC waveguides are still unknown, even though thermo‐optic effects can play an important role in ...
Xiaodong Shi +7 more
doaj +1 more source
High Single-Event Burnout Resistance 4H-SiC Junction Barrier Schottky Diode
IEEE Journal of the Electron Devices Society, 2021 This paper presents a single-event burnout (SEB) resistance method for 4H-SiC Junction Barrier Schottky Diode (JBS) under high bias voltage and linear energy transfer (LET) conditions.
Mao-Bin Li +5 more
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Spectroscopy studies of 4H-SiC [PDF]
Materials Research, 2003 Calculations of the total dielectric functions and the optical bandgap energy (OBGE) of 4HSiC were performed by the full-potential linear muffin-tin-orbital method. The results are compared to spectroscopic ellipsometry dielectric measurements agreeing closely over in a wide range of energies.
Oliveira, A.C. de +12 more
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AIP Advances, 2019 We have investigated the relationship between the electrical properties and interfacial atomic structure of SiO2/4H-SiC interfaces, prepared by dry and wet thermal oxidation procedures with 4H-SiC (0001) and 4H-SiC (000-1) substrates, using extended x ...
Efi Dwi Indari +4 more
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Influences of Nonaqueous Slurry Components on Polishing 4H-SiC Substrate with a Fixed Abrasive Pad
Crystals, 2023 4H-SiC wafers are more likely to sustain a lower material removal rate (MRR) and severe subsurface damage in conventional chemical mechanical polishing (CMP) methods.
Jiyuan Zhong +6 more
doaj +1 more source