Results 31 to 40 of about 261,592 (260)
Effect of hexagonality on the pressure-dependent lattice dynamics of 4H-SiC
New Journal of Physics, 2022 The pressure-dependent lattice dynamics of 4H-SiC is investigated using diamond anvil cell, and compared with those of 3C- and 6H-SiC. It is found that both the zone-center longitudinal optical (LO) and transverse optical (TO) modes shift to higher ...
Junran Zhang +9 more
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In situ high-pressure spectroscopic studies using moissanite (4H-SiC) anvils
AIP Advances, 2018 We examined the Raman scattering and IR absorption spectroscopy of 4H-SiC and its performance as an anvil material for high-pressure UV-visible absorption spectroscopic measurements.
Jinbo Zhang +7 more
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International Journal of Extreme Manufacturing, 2020 Single crystal silicon carbide (SiC) is widely used for optoelectronics applications. Due to the anisotropic characteristics of single crystal materials, the C face and Si face of single crystal SiC have different physical properties, which may fit for ...
Zige Tian, Xun Chen, Xipeng Xu
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Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate
IEEE Journal of the Electron Devices Society, 2023 In this study, we investigate the deposition of high-k dielectric materials, namely Al2O3 and HfO2, using atomic layer deposition for 4H-SiC metal-oxide-semiconductor applications.
Hao Huang +3 more
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Nanomaterials, 2022 Silicon carbide (SiC) is a promising semiconductor material for making high-performance power electronics with higher withstand voltage and lower loss. The development of cost-effective machining technology for fabricating SiC wafers requires a complete ...
Haoxiang Wang +4 more
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First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction
Advances in Condensed Matter Physics, 2018 First-principles calculation is employed to investigate atomic and electronic properties of Ge/SiC heterojunction with different Ge orientations. Based on the density functional theory, the work of adhesion, relaxation energy, density of states, and ...
Bei Xu +7 more
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Design Considerations for 4H-SiC Lateral BJTs for High Temperature Logic Applications
IEEE Journal of the Electron Devices Society, 2018 4H-silicon carbide (SiC)-based bipolar integrated circuits (ICs) are suitable alternatives to silicon (Si)-based ICs in high temperature applications, owing to superior properties of 4H-SiC and the robust performance of SiC bipolar junction transistors ...
Amna Siddiqui +2 more
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On-State Voltage Drop Analytical Model for 4H-SiC Trench IGBTs
Crystals, 2022 In this paper, a model for the forward voltage drop in a 4H-SiC trench IGBT is developed. The analytical model is based on the 4H-SiC trench MOSFET voltage model and the hole-carrier concentration profile in the N-drift region for a conventional 4H-SiC ...
Yanjuan Liu, Dezhen Jia, Junpeng Fang
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A look underneath the SiO2/4H-SiC interface after N2O thermal treatments
Beilstein Journal of Nanotechnology, 2013 The electrical compensation effect of the nitrogen incorporation at the SiO2/4H-SiC (p-type) interface after thermal treatments in ambient N2O is investigated employing both scanning spreading resistance microscopy (SSRM) and scanning capacitance ...
Patrick Fiorenza +6 more
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Thermal Evolution of Deuterium in 4H-Sic [PDF]
MRS Proceedings, 2002 Abstract4H-SiC samples were implanted at room temperature with 30 keV D+ ions at a dose of 5×1016 D+/cm2. Nuclear reaction analysis (NRA) and secondary ion mass spectroscopy (SIMS) measurements were performed to study the deuterium profiles after subsequent annealing at 1000-1250°C for 10min.Also, analytical techniques: RBS/C and thermal desorption ...
Delamare, Romain +5 more
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