Results 31 to 40 of about 19,738 (219)

Schottky Barrier Modulation of Metal/4H-SiC Junction with Thin Interface Spacer Driven by Surface Polarization Charge on 4H-SiC Substrate [PDF]

, 2016
The Au/Ni/Al2O3/4H-SiC junction with the Al2O3 film as a thin spacer layer was found to show the electrical characteristics of a typical rectifying Schottky contact, which is considered to be due to the leakiness of the spacer layer. The Schottky barrier
Carter C. H., Gahyun Choi, Hoon Hahn Yoon, Jung Yong Lee, Kibog Park, Sungchul Jung, Verma A. R., Wook Bahng, Youngeun Jeon, Zolnai Z.   +9 more
core   +1 more source

Spectroscopy studies of 4H-SiC [PDF]

Materials Research, 2003
Calculations of the total dielectric functions and the optical bandgap energy (OBGE) of 4HSiC were performed by the full-potential linear muffin-tin-orbital method. The results are compared to spectroscopic ellipsometry dielectric measurements agreeing closely over in a wide range of energies.
Oliveira, A.C. de, Freitas Jr., J.A., Moore, W.J., Silva, A. Ferreira da, Pepe, I., Almeida, J. Souza de, Osório-Guillén, J.M., Ahuja, R., Persson, C., Järrendahl, K., Lindquist, O.P.A., Edwards, N.V., Wahab, Q.   +12 more
openaire   +5 more sources

Isolated oxygen defects in 3C- and 4H-SiC: A theoretical study [PDF]

, 2002
Ab initio calculations in the local-density approximation have been carried out in SiC to determine the possible configurations of the isolated oxygen impurity. Equilibrium geometry and occupation levels were calculated.
A. Gali, A. Uedono, A. Zywietz, B. Aradi, B. Holm, C.G. Van de Walle, C.S. Fuller, D. Heringer, D. Volm, D.M. Ceperley, E. Rauls, G. Makov, G.D. Watkins, G.G. Jernigan, G.Y. Chung, H.J. Monkhorst, J.A. Cooper, Jr., J.W. Corbett, L. Patrick, M. Bockstedte, M. Bockstedte, M. DiVentra, M.A. Roberson, M.O. Aboelfotoh, N. Troullier, N.S. Saks, N.T. Son, O. Klettke, P. Deák, P. Deák, R. Buczko, R. P. Devaty, R.G. Humphreys, T. Dalibor, T. Dalibor, Th. Frauenheim, W. J. Choyke, W. Kohn, Z. Hajnal   +38 more
core   +1 more source

Relationship between electrical properties and interface structures of SiO2/4H-SiC prepared by dry and wet oxidation

AIP Advances, 2019
We have investigated the relationship between the electrical properties and interfacial atomic structure of SiO2/4H-SiC interfaces, prepared by dry and wet thermal oxidation procedures with 4H-SiC (0001) and 4H-SiC (000-1) substrates, using extended x ...
Efi Dwi Indari, Yoshiyuki Yamashita, Ryu Hasunuma, Hiroshi Oji, Kikuo Yamabe   +4 more
doaj   +1 more source

Influences of Nonaqueous Slurry Components on Polishing 4H-SiC Substrate with a Fixed Abrasive Pad

Crystals, 2023
4H-SiC wafers are more likely to sustain a lower material removal rate (MRR) and severe subsurface damage in conventional chemical mechanical polishing (CMP) methods.
Jiyuan Zhong, Jiapeng Chen, Hanqiang Wang, Haibo Chen, Yunyun Gu, Juanfen Shen, Tao Sun   +6 more
doaj   +1 more source

Effect of hexagonality on the pressure-dependent lattice dynamics of 4H-SiC

New Journal of Physics, 2022
The pressure-dependent lattice dynamics of 4H-SiC is investigated using diamond anvil cell, and compared with those of 3C- and 6H-SiC. It is found that both the zone-center longitudinal optical (LO) and transverse optical (TO) modes shift to higher ...
Junran Zhang, Tao Liang, Yunhao Lu, Binjie Xu, Tianqi Deng, Yiqiang Zhang, Zhidan Zeng, Xiaodong Pi, Deren Yang, Rong Wang   +9 more
doaj   +1 more source

The emergence of quantum capacitance in epitaxial graphene [PDF]

, 2016
We found an intrinsic redistribution of charge arises between epitaxial graphene, which has intrinsically n-type doping, and an undoped substrate. In particular, we studied in detail epitaxial graphene layers thermally elaborated on C-terminated $4H ...
Cropper, P., Forrester, D. M., Gaifullin, M. B., Kusmartsev, F. V., Kusmartseva, O. E., Oueslati, M., Trabelsi, A. Ben Gouider   +6 more
core   +2 more sources

Valence band structure and band offset of 3C- and 4H-SiC studied by ballistic hole emission microscopy [PDF]

, 2015
p-type Schottky barriers in Pt/3C-SiC contacts have been measured using ballistic hole emission microscopy (BHEM) and estimated to be ???0.06 eV higher than identically prepared Pt/p-type 4H-SiC contacts.
Ding, Y., Neudeck, P. G., Park, Kibog, Pelz, J. P., Trunek, A. J.   +4 more
core   +1 more source

In situ high-pressure spectroscopic studies using moissanite (4H-SiC) anvils

AIP Advances, 2018
We examined the Raman scattering and IR absorption spectroscopy of 4H-SiC and its performance as an anvil material for high-pressure UV-visible absorption spectroscopic measurements.
Jinbo Zhang, Xinli Zhao, Zhipeng Yan, Ye Yuan, Xin Li, Cuiying Pei, Haiyan Zheng, Lin Wang   +7 more
doaj   +1 more source

Leakage Current Behavior in HfO₂/SiO₂/Al₂O₃ Stacked Dielectric on 4H-SiC Substrate

IEEE Journal of the Electron Devices Society, 2023
In this study, we investigate the deposition of high-k dielectric materials, namely Al2O3 and HfO2, using atomic layer deposition for 4H-SiC metal-oxide-semiconductor applications.
Hao Huang, Ying Wang, Ke-Han Chen, Xin-Xing Fei   +3 more
doaj   +1 more source