Results 41 to 50 of about 19,738 (219)
Nanomaterials, 2022 Silicon carbide (SiC) is a promising semiconductor material for making high-performance power electronics with higher withstand voltage and lower loss. The development of cost-effective machining technology for fabricating SiC wafers requires a complete ...
Haoxiang Wang +4 more
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First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction
Advances in Condensed Matter Physics, 2018 First-principles calculation is employed to investigate atomic and electronic properties of Ge/SiC heterojunction with different Ge orientations. Based on the density functional theory, the work of adhesion, relaxation energy, density of states, and ...
Bei Xu +7 more
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Quantum well state of self-forming 3C-SiC inclusions in 4H SiC determined by ballistic electron emission microscopy [PDF]
, 2015 High-temperature-processing-induced double-stacking-fault 3C-SiC inclusions in 4H SiC were studied with ballistic electron emission microscopy in ultrahigh vacuum.
A. Fissel +35 more
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Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser
Crystals, 2022 The physical properties of silicon carbide (SiC) are excellent as a third-generation semiconductor. Nevertheless, diamond wire cutting has many drawbacks, including high loss, long cutting time and prolonged processing time.
Hanwen Wang +6 more
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Design Considerations for 4H-SiC Lateral BJTs for High Temperature Logic Applications
IEEE Journal of the Electron Devices Society, 2018 4H-silicon carbide (SiC)-based bipolar integrated circuits (ICs) are suitable alternatives to silicon (Si)-based ICs in high temperature applications, owing to superior properties of 4H-SiC and the robust performance of SiC bipolar junction transistors ...
Amna Siddiqui +2 more
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Thermal properties of AlGaN/GaN high electron mobility transistors on 4H and 6H SiC substrates [PDF]
, 2014 Micro-Raman thermography was employed to study the difference in thermal properties of identical, state-of-the-art AlGaN/GaN devices grown onto 4H SiC and 6H SiC substrates.
Jimenez, Jose L. +3 more
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Micromachines, 2023 Although many refractory metals have been investigated as the choice of contact metal in 4H-SiC devices, palladium (Pd) as a Schottky barrier contact for 4H-SiC radiation detectors for harsh environment applications has not been investigated adequately ...
Krishna C. Mandal +2 more
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Thermal Evolution of Deuterium in 4H-Sic [PDF]
MRS Proceedings, 2002 Abstract4H-SiC samples were implanted at room temperature with 30 keV D+ ions at a dose of 5×1016 D+/cm2. Nuclear reaction analysis (NRA) and secondary ion mass spectroscopy (SIMS) measurements were performed to study the deuterium profiles after subsequent annealing at 1000-1250°C for 10min.Also, analytical techniques: RBS/C and thermal desorption ...
Delamare, Romain +5 more
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A look underneath the SiO2/4H-SiC interface after N2O thermal treatments
Beilstein Journal of Nanotechnology, 2013 The electrical compensation effect of the nitrogen incorporation at the SiO2/4H-SiC (p-type) interface after thermal treatments in ambient N2O is investigated employing both scanning spreading resistance microscopy (SSRM) and scanning capacitance ...
Patrick Fiorenza +6 more
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On-State Voltage Drop Analytical Model for 4H-SiC Trench IGBTs
Crystals, 2022 In this paper, a model for the forward voltage drop in a 4H-SiC trench IGBT is developed. The analytical model is based on the 4H-SiC trench MOSFET voltage model and the hole-carrier concentration profile in the N-drift region for a conventional 4H-SiC ...
Yanjuan Liu, Dezhen Jia, Junpeng Fang
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