Results 41 to 50 of about 261,592 (260)
Micromachines, 2023 Although many refractory metals have been investigated as the choice of contact metal in 4H-SiC devices, palladium (Pd) as a Schottky barrier contact for 4H-SiC radiation detectors for harsh environment applications has not been investigated adequately ...
Krishna C. Mandal +2 more
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Integrated photoanode based on silicon carbide nanowire arrays for efficient water splitting
工程科学学报, 2023 In the context of rapid social development, it is urgent to address the increasingly prominent issues of fossil energy depletion and environmental pollution.
Lin-lin ZHOU +4 more
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Native point defects and carbon clusters in 4H-SiC: A hybrid functional study [PDF]
Journal of Applied Physics, 2019 We report first-principles calculations that clarify the formation energies and charge transition levels of native point defects and carbon clusters in the 4H polytype of silicon carbide (4H-SiC) under a carbon-rich condition.
Takuma Kobayashi +4 more
semanticscholar +1 more source
Anisotropic hole drift velocity in 4H-SiC [PDF]
Materials Science and Engineering: B, 2019 A theoretical study on the nonlinear transport of holes in the transient and steady state of p-doped 4H-SiC under the influence of high electric fields is presented. It is based on a nonlinear quantum kinetic theory which provides a clear description of the dissipative phenomena that are evolving in the system.
Vasconcelos, Jackelinne L. +2 more
openaire +2 more sources
Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer
Micromachines, 2019 In this work, the piezoresistive properties of heavily doped p-type 4H-SiC at room temperature were investigated innovatively. It was verified by a field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), and laser Raman spectroscopy
Yongwei Li +8 more
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Holos, 2019 AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-power and high-frequency applications of microwave device. In this paper, the impact of silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and
Masoud Sabaghi
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Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined by Surface Micro-Nano Steps
Crystals, 2023 In this study, we used a horizontal hot-wall CVD epitaxy apparatus to grow epitaxial layers on 4° off-axis 4H-SiC substrates. Epitaxial films were grown by adjusting the flow rate of the source gas at different levels.
Ning Guo +7 more
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Advanced Functional Materials, EarlyView.Cu‐based catalysts as a cornerstone in advancing sustainable energy technologies are fully reviewed in this manuscript, highlighting their potential in photo‐ and electrocatalysis. It includes metallic copper, copper oxides, copper sulfides, copper halide perovskites, copper‐based metal–organic frameworks (MOFs), and covalent organic frameworks (COFs),
Jéssica C. de Almeida +16 more
wiley +1 more source
Simple method for the growth of 4H silicon carbide on silicon substrate
AIP Advances, 2016 In this study we report thermal evaporation technique as a simple method for the growth of 4H silicon carbide on p-type silicon substrate. A mixture of Si and C60 powder of high purity (99.99%) was evaporated from molybdenum boat.
M. Asghar +6 more
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Advanced Functional Materials, EarlyView.This review highlights recent advances in label‐free optical biosensors based on 2D materials and rationally designed mixed‐dimensional nanohybrids, emphasizing their synergistic effects and novel functionalities. It also discusses multifunctional sensing platforms and the integration of machine learning for intelligent data analysis.
Xinyi Li, Yonghao Fu, Yuehe Lin, Dan Du
wiley +1 more source