Results 81 to 90 of about 19,738 (219)

Thermal Stability of Gate Driver Circuits Based on 4H-SiC MOSFETs at 300°C for High-Power Applications

IEEE Journal of the Electron Devices Society
The operation and reliability of gate driver circuits based on 4H-SiC MOSFETs at temperatures up to 300°C were reported. Due to the advantages of 4H-SiC MOSFETs, the driver circuit can overcome limitations in complicated circuit design and power ...
Vuong Van Cuong, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Shin-Ichiro Kuroki   +5 more
doaj   +1 more source

Characterization of Nitrogen-Boron doped 4H-SiC substrates

International Journal of Electrochemical Science, 2013
Nitrogen-Boron doped 4H-SiC single crystal was prepared by physical vapor transport method and the doping concentration was determined by secondary ion mass spectroscopy. The resistivity of 4H-SiC substrate was measured by contactless method.
Rusheng Wei, Xiufang Chen, Lihuan Wang, Sheng Song, Kun Yang, Xiaobo Hu, Yan Peng, Xiangang Xu   +7 more
doaj   +1 more source

All-optical coherent population trapping with defect spin ensembles in silicon carbide [PDF]

, 2014
Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions, with properties that are similar to the nitrogen-vacancy defect in diamond. We report experiments on 4H-SiC that investigate all-optical addressing
O'Shea, Danny, Onur, Alexander R., van der Wal, Caspar H., Zwier, Olger V.   +3 more
core   +2 more sources

2D Iron Oxide at the Graphene/SiC(0001) Interface

Small Methods, EarlyView.
2D iron oxide was successfully formed via intercalation of Fe and O into the graphene/SiC(0001) interface. Atomic‐resolution electron microscopy revealed that the 2D iron oxide is encapsulated by graphene and sharply interfaced with SiC. This material is suggested to exhibit antiferromagnetic behavior at low temperatures.
Ryotaro Sakakibara, Tomo‐o Terasawa, Taizo Kawauchi, Katsuyuki Fukutani, Takahiro Ito, Wataru Norimatsu   +5 more
wiley   +1 more source

Amorphous interface layer in thin graphite films grown on the carbon face of SiC [PDF]

, 2011
Cross-sectional transmission electron microscopy (TEM) is used to characterize an amorphous layer observed at the interface in graphite and graphene films grown via thermal decomposition of C-face 4H-SiC.
Bolen, M. L., Capano, M. A., Colby, R., Stach, E. A.   +3 more
core   +3 more sources

Incipient plasticity in 4H-SiC during quasistatic nanoindentation [PDF]

Journal of the Mechanical Behavior of Biomedical Materials, 2014
Silicon carbide (SiC) is an important orthopedic material due to its inert nature and superior mechanical and tribological properties. Some of the potential applications of silicon carbide include coating for stents to enhance hemocompatibility, coating for prosthetic-bearing surfaces and uncemented joint prosthetics. This study is the first to explore
Saurav Goel, Jiwang Yan, Xichun Luo, Anupam Agrawal   +3 more
openaire   +3 more sources

A new catfish species of Microcambeva Costa & Bockmann, 1994 (Siluriformes: Trichomycteridae) from southern Brazil, with a redescription of M. ribeirae Costa, Lima & Bizerril, 2004

Journal of Fish Biology, EarlyView.
Abstract Among the few species of Microcambeva reported as occurring in more than one hydrographic basin, M. ribeirae has been previously listed from both the Ribeira de Iguape and the Guaraqueçaba basins. However, morphological and molecular analyses revealed that the specimens from Guaraqueçaba represent a new species, which is described in this ...
Lucas S. de Medeiros, Igor C. A. Souto‐Santos, Paulo A. Buckup, Juliano Ferrer, Vinicius J. C. Reis, Mario de Pinna, Sergio M. Q. Lima   +6 more
wiley   +1 more source

Effect of surface roughness on the nucleation of diamond on a 4H-SiC substrate

Functional Diamond
Diamond has the highest thermal conductivity among all materials and can be applied to overcome the heat dissipation problem in radio frequency devices based on the heterojunction of gallium nitride (GaN) and 4H silicon carbide (4H-SiC). However, growing
Hanchang Hu, Yuhao Zheng, Pan Deng, Tianqi Deng, Deren Yang, Xiaodong Pi   +5 more
doaj   +1 more source

Investigation into electrochemical oxidation behavior of 4H-SiC with varying anodizing conditions

Electrochemistry Communications, 2019
Electrochemical-assisted hybrid machining has been widely utilized for processing of single crystal SiC, which is a very promising next-generation semiconductor material for high power, high frequency and high temperature applications.
Zhaojie Chen, Yonghua Zhao
doaj   +1 more source

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

Micromachines, 2020
Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environment application have been studied extensively and reviewed in this article.
Krishna C. Mandal, Joshua W. Kleppinger, Sandeep K. Chaudhuri   +2 more
doaj   +1 more source