Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor [PDF]
Micromachines, 2019 L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel.
Junsu Yu +7 more
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Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain
IEEE Journal of the Electron Devices Society, 2014 In this paper, we have demonstrated that overlapping the gate on the drain can suppress the ambipolar conduction, which is an inherent property of a tunnel field effect transistor (TFET).
Dawit B. Abdi, M. Jagadesh Kumar
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Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension [PDF]
Journal of Optoelectronical Nanostructures, 2023 :For the first time, in this research, we introduce ajunctionless tunneling FET (J-TFET) on a uniform p+starting junctionless FET to realize appreciable immunityagainst inherent high ambipolar current (Iamb).
Morteza Rahimian
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Performance Analysis and Optimization of an InGaAs/GaAsSb Heterojunction Dopingless Tunnel FET with a Heterogate Dielectric [PDF]
MicromachinesAn InGaAs/GaAsSb heterojunction dopingless Tunnel FET with a heterogate dielectric is proposed and investigated in this work, aiming to extend the advantages of dopingless TFETs in low-power applications.
JunJie Huang +5 more
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Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design [PDF]
Scientific ReportsThe performance of a Dual-Metal-InAs-GaSb Vertical Tunnel Field Effect Transistor (DM-InAs-GaSb VTFET) with an InAs source pocket was investigated in relation to the gate dielectric materials.
M. Saravanan +3 more
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On-site biosignal amplification using a single high-spin conjugated polymer [PDF]
Nature CommunicationsOn-site or in-sensor biosignal transduction and amplification can offer several benefits such as improved signal quality, reduced redundant data transmission, and enhanced system integration.
Gao-Yang Ge +14 more
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Current-density fluctuations and ambipolarity of transport [PDF]
Physical Review Letters, 1992 The fluctuation in the plasma current density is measured in the MIST reversed field pinch experiment. Such fluctuations, and the measured radial profile of the k spectrum of magnetic fluctuations, supports the view and that low frequency fluctuations (f ) demonstrates that radial particle transport from particle motion parallel to a fluctuating ...
, Shen, , Dexter, , Prager
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Controlling Drain Side Tunneling Barrier Width in Electrically Doped PNPN Tunnel FET
Micromachines, 2023 In this paper, we propose and investigate an electrically doped (ED) PNPN tunnel field effect transistor (FET), in which the drain side tunneling barrier width is effectively controlled to obtain a suppressed ambipolar current.
Chan Shan +4 more
doaj +1 more source
Journal of Engineering Technology and Applied Physics, 2023 To meet the performance requirements of low power mobile devices, a device with a high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their low subthreshold slope and high transconductance compared to MOSFETs.
Tan Chun Fui, Ajay Kumar Singh
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Doping-less tunnel field-effect transistors by compact Si drain frame/Si0.6Ge0.4-channel/Ge source
AIP Advances, 2021 Tunnel field-effect transistors (TFETs) have attracted immense interest as a promising alternative to complementary metal–oxide semiconductors for low-power-consumption applications.
Byoung-Seok Lee +6 more
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