Results 181 to 190 of about 9,695,497 (239)

Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization. [PDF]

Nat Commun
Feng G, Liu Y, Zhu Q, Feng Z, Luo S, Qin C, Chen L, Xu Y, Wang H, Zubair M, Qu K, Yang C, Hao S, Yue F, Duan C, Chu J, Tian B.   +16 more
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High-Performance Silicon Nanowire Reconfigurable Field Effect Transistors Using Flash Lamp Annealing. [PDF]

ACS Appl Electron Mater
Ghosh S, Khan MB, Prucnal S, Hübner R, Chava P, Mauersberger T, Mikolajick T, Erbe A, Georgiev YM.   +8 more
europepmc   +1 more source

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Methods to Reduce Ambipolar Current of Various TFET Structures: a Review

Silicon, 2021
As far as miniaturization of devices are being continue in semiconductor market, there are alternative option has been discovered by the researcher. It is well known that Metal Oxide Semiconductor (MOS) devices have vast applications in various emerging fields from medical to defense. However, there are certain drawbacks of MOSFET such as limited value
Shreyas Tiwari, Rajesh Saha
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Suppressing Ambipolar Current in UTFET by Auxiliary Gate

Iranian Journal of Science and Technology, Transactions of Electrical Engineering, 2020
In this paper, a new U-shaped channel tunneling-based field-effect transistor (UTFET) with auxiliary gate above drain is proposed. The ambipolar current in the proposed is investigated, in which simulation results show that ambipolar current takes place, due to drain-to-drain tunneling similar to gate-induced drain leakage in conventional MOSFETs.
Kaveh Eyvazi, Mohammad Azim Karami
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Tapered-Shape Channel Engineering for Suppression of Ambipolar Current in TFET

2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM), 2020
This paper proposes a novel Si-TFET based on a tapered channel structure. The taper-channel design presented in this work provides a higher thickness at the source side than at the drain side, whereas the gate oxide is lesser at the source than at the drain side.
Yasmin Morgan, Mohamed Abouelatta, Mohamed El-Banna, Ahmed Shaker   +3 more
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Controlling ambipolar current of dopingless tunnel field-effect transistor

Applied Physics A, 2018
Ambipolarity in tunnel field-effect transistor (TFET) is a subject of grave concern in the current scenario of the semiconductor industry as this property of device limits its usability in CMOS circuit applications. In this concern, this paper presents a new approach to suppress the ambipolar behavior of dopingless TFET (DL TFET) by controlling the ...
Sukeshni Tirkey, Dharmendra Singh Yadav, Dheeraj Sharma   +2 more
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A Novel Step-shaped Gate Tunnel FET with Low Ambipolar Current

2019 2nd International Symposium on Devices, Circuits and Systems (ISDCS), 2019
In this paper, a novel TFET architecture named the step-shaped gate TFET (SSG-TFET) has been proposed for the suppression of the ambipolar current. By adjusting the energy band, the SSG-TFET can evidently reduce the ambipolar current. We compare the proposed SSG-TFET with the conventional DGTFET, gate overlap on drain TFET (OGTFET) and gate underlap ...
Mingjun Liu, Qian Xie, Shuang Xia, Zheng Wang   +3 more
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Suppression of Ambipolar current in Tunnel Field-Effect Transistor using Field-Plate

2020 24th International Symposium on VLSI Design and Test (VDAT), 2020
This paper proposes a tunnel field-effect transistor (TFET) with an additional field-plate over the drain region in the device. Using 2-D device simulations, it is shown that, by introducing a field-plate with an appropriate work function, placed on the top of the drain region, the ambipolar current of the device can be effectively suppressed ...
Subhadip Poria, Shelly Garg, Sneh Saurabh   +2 more
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Effects of Drain Doping Profile and Gate Structure on Ambipolar Current of TFET

2020 IEEE 3rd International Conference on Electronics Technology (ICET), 2020
In this paper, the effects of drain doping profile and gate structure on ambipolar behavior of tunnel field effect transistor (TFET) are investigated. The Gaussian doping drain region TFET (GD TFET) ambipolar current is lower than abrupt junction doping TFET.
Jie Li, Qian Xie, Anpeng Huang, Zheng Wang   +3 more
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Band-to-band tunneling limited ambipolar current in black phosphorus MOSFETs

2017 75th Annual Device Research Conference (DRC), 2017
Black phosphorus (BP) has emerged as a promising channel material for highly scaled transistors with a high mobility (1000 cm2/Vs), tunable band gap (0.3 eV–2.0 eV), and anisotropic effective mass [1]-[4] at ultra-thin body thicknesses. While devices with high performance in the ON-state have been demonstrated by using Schottky contacts, the ...
Matthew C. Robbins, Nazila Haratipour, Steven J. Koester   +2 more
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