Results 191 to 200 of about 9,695,497 (239)

Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors

Nanoscale, 2016
Multi-layer black phosphorus has emerged as a strong candidate owing to its high carrier mobility with most of the previous research work focused on its p-type properties. Very few studies have been performed on its n-type electronic characteristics which are important not only for the complementary operation for logic, but also crucial for ...
Xuefei, Li, Yuchen, Du, Mengwei, Si, Lingming, Yang, Sichao, Li, Tiaoyang, Li, Xiong, Xiong, Peide, Ye, Yanqing, Wu   +8 more
openaire   +3 more sources

Controlling the ambipolar current in ultrathin SOI tunnel FETs using the back-bias effect

Journal of Computational Electronics, 2020
A two-dimensional (2-D) technology computer-aided design (TCAD)-based simulation study of the back bias in the ultrathin silicon-on-insulator (SOI) tunnel field-effect transistor (TFET) is presented. The transfer characteristics of a conventional TFET called the back-bias TFET (BB-TFET) depend on the back bias and the oxide thickness below the TFET ...
Tripuresh Joshi, Balraj Singh, Yashvir Singh   +2 more
openaire   +2 more sources

Design and Analysis of ION and Ambipolar Current for Vertical TFET

2020
This draft investigates about the vertical tunnel FET (VTFET) with heterostructure at channel/source interface of SiGe layer using Sentaurus Technology computer-aided design simulation. As MOSFET is scaled down to the nanoscale dimensions, the problems arise such as short channel effects, the I-OFF leakage current grow drastically because to the non ...
Shailendra Singh, Balwinder Raj
openaire   +2 more sources

Controlling the Ambipolar current by using Graded drain doped TFET

2023 International Conference on Device Intelligence, Computing and Communication Technologies, (DICCT), 2023
A Graded Doped Drain TFET (GD-TFET) architecture is proposed in this work to suppress the ambipolar current that exists in Conventional TFET (C-TFET).
Priyanka Dhiman, Kavindra Kumar Kavi, Ratneshwar Kumar Ratnesh, Abhishek Kumar   +3 more
openaire   +2 more sources

Investigation of Dual Metal Gate Schottky Barrier MOSFET for Suppression of Ambipolar Current

IETE Journal of Research, 2020
In this paper, I have presented a simulation study to suppress the ambipolar current of the Schottky Barrier (SB) MOSFET. In this work, I have used a dual metal gate device structure.
S. Kale
openaire   +2 more sources

30-nm Tunnel FET With Improved Performance and Reduced Ambipolar Current

IEEE Transactions on Electron Devices, 2011
This paper presents the optimization of double-gate silicon (Si) tunnel field-effect transistors (TFETs). It shows that, for the heterodielectric structure, the ION current is boosted by correctly positioning the source with respect to the gate edge. The second booster used in this paper is the Si thickness that is tuned in order to maximize the ION ...
Costin Anghel, null Hraziia, Anju Gupta, Amara Amara, Andrei Vladimirescu   +4 more
openaire   +2 more sources

An analysis on the ambipolar current in Si double-gate tunnel FETs

Solid-State Electronics, 2012
Abstract This work presents a study on the influence of the design parameters on the ambipolar current (IAMB) of the Tunnel Field Effect Transistors (TFETs). Using numerical device simulations, IAMB is reduced progressively by underlapping the gate and the drain, by using low-k spacers and by placing the contacts in the top and bottom configuration ...
Hraziia, Vladimirescu A., Amara A., Anghel C.   +3 more
openaire   +2 more sources

Extruded source gate TFET for completely suppressed ambipolar current

Micro and Nanostructures
Rohan Rohidas Naik, Lokesh Kumar Bramhane, T. Veerakumar, Amol D. Rahulkar, Jawar Singh   +4 more
openaire   +2 more sources

Ambipolar Current Reduction in SiGe Source Based Heterojunction Tunnel FET

2025 International Conference on Electronics, AI and Computing (EAIC)
Irfan Ahmad Pindoo, Pawandeep Kaur, Balwinder Raj   +2 more
openaire   +2 more sources

Analysis of ON Current and Ambipolar Current for Source Pocket Gate-Drain Underlap Double Gate Tunnel Field Effect Transistor

International Symposium on Smart Electronic Systems, 2022
In this research, a unique gate-drain underlapping source pocket double gate tunnel field effect transistor (SP-DGTFET) has been proposed. The proposed TFET suppresses the ambipolar component when an underlap is used.
K. M. C. Babu, Ekta Goel
semanticscholar   +1 more source