Results 21 to 30 of about 9,695,497 (239)

Dielectric and work function engineered TFET for ambipolar suppression and RF performance enhancement

Electronics Letters, 2016
A novel approach to suppress the ambipolar behaviour and enhance RF parameters is proposed for the first time. For this, the dielectric and gate material work function engineering is used to suppress the ambipolar behaviour individually.
B. Raad, K. Nigam, D. Sharma, P. Kondekar   +3 more
doaj   +1 more source

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

Micromachines, 2023
In this paper, a new SiGe/Si heterojunction double-gate heterogate dielectric tunneling field-effect transistor with an auxiliary tunneling barrier layer (HJ-HD-P-DGTFET) is proposed and investigated using TCAD tools. SiGe material has a smaller band gap
Qing Chen, Rong Sun, Ruixia Miao, Hanxiao Liu, Lulu Yang, Zengwei Qi, Wei He, Jianwei Li   +7 more
doaj   +1 more source

Improving the Scalability of SOI-Based Tunnel FETs Using Ground Plane in Buried Oxide

IEEE Journal of the Electron Devices Society, 2019
Tunnel field-effect transistors (TFETs) are known to exhibit degraded electrical characteristics at smaller channel lengths, primarily due to direct source-to-drain band-to-band tunneling (BTBT).
Shelly Garg, Sneh Saurabh
doaj   +1 more source

Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors [PDF]

ACS Nano, 2023
Ambipolar dual-gate transistors based on low-dimensional materials, such as graphene, carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs), enable reconfigurable logic circuits with a suppressed off-state current. These
Xintong Li, Peng Zhou, Xuan Hu, Ethan Rivers, Kenji Watanabe, T. Taniguchi, D. Akinwande, J. Friedman, J. Incorvia   +8 more
semanticscholar   +1 more source

Impact of gate misalignment on the performance of CNTFET: TFET vs MOSFET

Alexandria Engineering Journal, 2023
CNTFET device structures are gaining more research interest as conventional FET structures are reaching their scaling limits. One of the most crucial effects that could occur in the fabrication on the nanometer scale is the gate misalignment.
A. Salah, M. El Banna, A. Shaker, M. Ossaimee   +3 more
doaj   +1 more source

Tuning the ambipolar behaviour of organic field effect transistors via band engineering

AIP Advances, 2019
We report on a method for fabricating balanced hole and electron transport in ambipolar organic field-effect transistors (OFETs) based on the co-evaporation of zinc-phthalocyanine (ZnPc) and its fluorinated derivative (F8ZnPc).
P. R. Warren, J. F. M. Hardigree, A. E. Lauritzen, J. Nelson, M. Riede   +4 more
doaj   +1 more source

A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement [PDF]

مجله مدل سازی در مهندسی
In this paper, a novel heterostructure junctionless tunnel field effect transistor with silicon-on-nothing technology (SON HS-JLTFET) is proposed. The proposed device has two advantages over conventional JLTFET.
Amin Vanak, Amir Amini
doaj   +1 more source

Ambipolar diffusion in superfluid neutron stars [PDF]

, 2011
In this paper we reconsider the problem of magnetic field diffusion in neutron star cores. We model the star as consisting of a mixture of neutrons, protons and electrons, and allow for particle reactions and binary collisions between species.
Alpar, Andersson, Andersson, Arras, Baiko, Baym, Braithwaite, Carter, Ciolfi, Cumming, D. I. Jones, Feibelman, Glampedakis, Goldreich, Haensel, Haensel, Hall, Haskell, Hoyos, Hoyos, K. Glampedakis, L. Samuelsson, Lander, Link, Pons, Prix, Ruderman, Sauls, Sauls, Sawyer, Thompson, Thompson, Thompson, Tilley, Yakovlev   +34 more
core   +1 more source

High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling

Micromachines, 2019
The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (Ion) and low subthreshold swing (SS) with reasonable ambipolar characteristics.
Garam Kim, Jaehong Lee, Jang Hyun Kim, Sangwan Kim   +3 more
doaj   +1 more source

Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain

Micromachines, 2019
In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (
Jang Hyun Kim, Hyun Woo Kim, Garam Kim, Sangwan Kim, Byung-Gook Park   +4 more
doaj   +1 more source