Results 51 to 60 of about 9,695,497 (239)
Results in Physics, 2018 We report energy band bending of methylammonium lead halide (MAPbI3) perovskite film in contact with indium-tin-oxide (ITO) surface using photoelectron spectroscopy in air (PESA) and ultraviolet photoelectron spectroscopy (UPS) measurements.
Yujin Park, Byoungnam Park
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Silver Ions as Ambipolar Dopants in InAs Nanocrystal Solids. [PDF]
Adv MaterAg⁺ ions post‐introduced into InAs nanocrystal films act as ambipolar dopants whose effect depends on host polarity and dopant concentration. In n‐type InAs nanocrystal films, Ag⁺ occupies interstitial sites to yield n‐type doping effect, whereas in Zn‐doped p‐type InAs nanocrystal films, it first forms p‐type surface doping effect and later induces n ...
Cho H +11 more
europepmc +2 more sources
Trapped Particle Stability for the Kinetic Stabilizer
, 2011 A kinetically stabilized axially symmetric tandem mirror (KSTM) uses the momentum flux of low-energy, unconfined particles that sample only the outer end-regions of the mirror plugs, where large favorable field-line curvature exists.
Berk H.L. +12 more
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Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Advanced Functional Materials, EarlyView.Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
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Advanced Electronic MaterialsAmbipolar transistors facilitate concurrent transport of both positive (holes) and negative (electrons) charge carriers in the semiconducting channel.
Vaishali Vardhan +7 more
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Advanced Electronic Materials, 2023 A dual‐gate anti‐ambipolar transistor (AAT) with a two‐dimensional ReS2 and WSe2 heterojunction is developed. The characteristic Λ‐shaped transfer curves yielded by the bottom‐gate voltage are effectively controlled by the top‐gate voltage.
Yoshitaka Shingaya +7 more
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A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors
, 2003 We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is attached to an ...
Datta, Supriyo +2 more
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Advanced Functional Materials, EarlyView.Topological van der Waals contacts represent a new class of electrodes for 2D semiconductors, enabling precise control of the Schottky barrier height (SBH) and contact resistance (RC) through interlayer distance and orbital hybridization engineering. In Se‐based transition metal dichalcogenides, these contacts achieve an ultralow SBH of 7 meV, RC of 0.
Soheil Ghods +15 more
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AIP Advances, 2012 Choosing novel materials and structures is important for enhancing the on-state current in tunnel field-effect transistors (TFETs). In this paper, we reveal that the on-state performance of TFETs is mainly determined by the energy band profile of the ...
Ning Cui +3 more
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Analysis on Tunnel Field-Effect Transistor with Asymmetric Spacer
Applied Sciences, 2020 Tunnel field-effect transistor (Tunnel FET) with asymmetric spacer is proposed to obtain high on-current and reduced inverter delay simultaneously.
Hyun Woo Kim, Daewoong Kwon
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