Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET [PDF]
NanomaterialsThis study investigates the degradation mechanisms of 1200 V SiC MOSFETs during High-temperature Reverse Bias (HTRB) reliability testing, focusing on breakdown voltage (BV) reduction.
Mengyuan Yu +3 more
doaj +2 more sources
I–V Characteristics and Electrical Reliability of Metal–SixNy–Metal Capacitors as a Function of Nitrogen Bonding Composition [PDF]
MicromachinesIn this study, we analyzed the electrical characteristics of metal–insulator–metal (MIM) capacitors fabricated with reference to insulator (SixNy) thickness and deposition condition.
Tae-Min Choi +5 more
doaj +2 more sources
A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations [PDF]
MicromachinesSuperjunction (SJ) technology offers a promising solution to the challenges faced by silicon carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) operating at high voltages (>3 kV).
Marco Boccarossa +8 more
doaj +2 more sources
Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices [PDF]
MicromachinesThis study focuses on the impact of negative fixed charge, achieved through fluorine (F) implantation, on breakdown voltage (BV) enhancement in vertical GaN Schottky diodes.
Vishwajeet Maurya +4 more
doaj +2 more sources
Micromachines, 2022 This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (VTH) stability.
Hongyue Wang +5 more
doaj +1 more source
Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
Micromachines, 2021 In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off.
Ki Yeong Kim +3 more
doaj +1 more source
Erratum to: Modeling and experimental study on breakdown voltage (BV) in low speed wire electrical discharge machining (LS-WEDM) of Ti-6Al-4V [PDF]
The International Journal of Advanced Manufacturing Technology, 2017 In this study, the breakdown voltage behavior in low speed wire electrical discharge machining (LS-WEDM) of Ti-6Al-4V (TC4) in the deionized water is investigated. Firstly, the electric field distortion caused by impurity particles including TC4 or brass metal and bubbles is investigated.
Yadong Gong +5 more
openaire +1 more source
GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance
Micromachines, 2023 A novel VDMOS with the GaN/Si heterojunction (GaN/Si VDMOS) is proposed in this letter to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp) by Breakdown Point Transfer (BPT), which transfers the breakdown point from the high ...
Xin Yang, Baoxing Duan, Yintang Yang
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Breakdown voltage characteristics of combined air gaps under negative lightning impulse
Energy Reports, 2022 Long air gaps are the main external insulation medium of overhead transmission lines. When there are floating conductors in the air gap, the gap’s configuration changes, and the combined air gaps is formed. We built an experimental platform to obtain the
Shaocheng Wu +7 more
doaj +1 more source
Results in Physics, 2020 A novel SiC/Si heterojunction lateral double-diffused metal-oxidesemiconductor (LDMOS) with a reversed L-shaped field plate and a stepped oxide layer has been proposed to improve the tradeoff between the breakdown voltage (BV) and specific on-resistance (
Qi Li +8 more
doaj +1 more source