Results 11 to 20 of about 14,758 (228)
A Breakdown Voltage Multiplier for High Voltage Swing Drivers [PDF]
, 2007 A novel breakdown voltage (BV) multiplier is introduced that makes it possible to generate high output voltage swings using transistors with low breakdown voltages. The timing analysis of the stage is used to optimize its dynamic response.
Hajimiri, Ali, Mandegaran, Sam
core +1 more source
Equivalent model and limit for the SOI lateral power device using high-k dielectric
Results in Physics, 2019 This paper presents a simple and clear equivalent model to investigate the SOI lateral power device using high-k dielectric (HK device). The proposed model can accurately characterize the electric field and facilitate the obtainment of optimal breakdown ...
Jiafei Yao +5 more
doaj +1 more source
Simulation, design and fabrication of large area implanted silicon two-dimensional position sensitive radiation detectors [PDF]
, 1991 The fabrication process of a two-dimensional position sensitive radiation detector (2-D PSD) with a 4 cm2 active area is presented. Critical steps in the fabrication are emphasised.
Aïte, K. +3 more
core +2 more sources
IEEE Journal of the Electron Devices Society, 2022 Breakdown capability of ${\beta }$ -Ga2O3/GaN heterojunction-based vertical p-n power diodes with mesa edge termination (ET) was comprehensively investigated using TCAD simulation.
Dinusha Herath Mudiyanselage +2 more
doaj +1 more source
Financial consulting in Ukraine [PDF]
, 2013 Implantation-free 4H-SiC bipolar junction transistors with multiple-shallow-trench junction termination extension have been fabricated. The maximum current gain of 40 at a current density of 370 A/cm(2) is obtained for the device with an active area of 0.
Antoniuk, Yulia +3 more
core +2 more sources
Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination
IEEE Journal of the Electron Devices Society, 2020 Gallium nitride (GaN)-based power devices enable high power density and high switching frequency for power electronics systems. For the emerging vertical GaN devices, the electric field crowding around the edge of the main junction could result in ...
Yuxin Liu, Shu Yang, Kuang Sheng
doaj +1 more source
Numerical investigation on L-shaped vertical field plate in high-voltage LDMOS
Results in Physics, 2019 In this work, an L-shaped vertical field plate (LVFP) is introduced in high-voltage lateral double-diffused MOSFET (LDMOS). The LVFP is embedded in an oxide trench that penetrates into the drift region. Compared with the conventional vertical field plate
Yue Hu +5 more
doaj +1 more source
Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs [PDF]
, 2019 The edge termination design strongly affects the ability of a power device to support the desired voltage and its reliable operation. In this paper we present three appropriate termination designs for 10kV n-IGBTs which achieve the desired blocking ...
, +9 more
core +1 more source
Advances in Condensed Matter Physics, 2015 In order to achieve a high breakdown voltage (BV) for the SOI (Silicon-On-Insulator) power device in high voltage ICs, a novel high voltage n-channel lateral double-diffused MOS (LDMOS) with a lateral variable interface doping profile (LVID) placed at ...
Jingjing Jin +7 more
doaj +1 more source
Micromachines, 2023 In this paper, the transient breakdown voltage (TrBV) of a silicon-on-insulator (SOI) laterally diffused metal-oxide-semiconductor (LDMOS) device was increased by introducing a step P-type doping buried layer (SPBL) below the buried oxide (BOX).
Xiaoming Yang +4 more
doaj +1 more source