Results 31 to 40 of about 14,758 (228)

Performance analysis of a novel trench SOI LDMOS with centrosymmetric double vertical field plates

Results in Physics, 2019
A novel trench SOI LDMOS with centrosymmetric double vertical field plates structure (CDVFPT SOI LDMOS) is proposed in this paper. The 2-D device simulator MEDICI is used to investigate the characteristics of the proposed structure.
Jianmei Lei, Shengdong Hu, Dong Yang, Ye Huang, Lidong Chen, Jingwei Guo, Chang Liu, Tao Liu, Yuan Wang   +8 more
doaj   +1 more source

Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation

Micromachines, 2022
A novel VDMOS with Step Floating Islands VDMOS (S-FLI VDMOS) is proposed for the first time in this letter, in order to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp).
Dongyan Zhao, Yubo Wang, Yanning Chen, Jin Shao, Zhen Fu, Baoxing Duan, Fang Liu, Xiuwei Li, Tenghao Li, Xin Yang, Mingzhe Li, Yintang Yang   +11 more
doaj   +1 more source

Realization of High Current Gain for Van der Waals MoS₂/WSe₂/MoS₂ Bipolar Junction Transistor

Nanomaterials
Two-dimensional (2D) materials have attracted great attention in the past few years and offer new opportunities for the development of high-performance and multifunctional bipolar junction transistors (BJTs). Here, a van der Waals BJT based on vertically
Zezhang Yan, Ningsheng Xu, Shaozhi Deng
doaj   +1 more source

A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile

IEEE Journal of the Electron Devices Society, 2021
In this article, we investigate a 4H-SiC super- junction (SJ) MOSFET structure with a charge-imbalance doping-profile. According to our numerical simulations and comparisons with the conventional SiC VDMOS (C-VDMOS) and SiC SJ VDMOS (SJ-VDMOS) devices ...
Hao Huang, Ying Wang, Cheng-Hao Yu, Zhao-Huan Tang, Xing-Ji Li, Jian-Qun Yang, Fei Cao   +6 more
doaj   +1 more source

An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method

IEEE Journal of the Electron Devices Society, 2020
To elaborate on the relationship between sophisticated 2-D doping profile of drift region and device's breakdown behavior, a unified analytical model for the SOI LDMOS is developed in this paper.
Kemeng Yang, Yufeng Guo, Jun Zhang, Jiafei Yao, Man Li, Ling Du, Xiaoming Huang   +6 more
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

Chip
GaN power electronic devices, such as the lateral AlGaN/GaN Schottky barrier diode (SBD), have received significant attention in recent years. Many studies have focused on optimizing the breakdown voltage (BV) of the device, with a particular emphasis on
Ru Xu, Peng Chen, Xiancheng Liu, Jianguo Zhao, Tinggang Zhu, Dunjun Chen, Zili Xie, Jiandong Ye, Xiangqian Xiu, Fayu Wan, Jianhua Chang, Rong Zhang, Youdou Zheng   +12 more
doaj   +1 more source

Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks

Micromachines, 2022
Due to the complexity of the 2D coupling effects in AlGaN/GaN HEMTs, the characterization of a device’s off-state performance remains the main obstacle to exploring the device’s breakdown characteristics. To predict the off-state performance of AlGaN/GaN
Jing Chen, Yufeng Guo, Jun Zhang, Jianhua Liu, Qing Yao, Jiafei Yao, Maolin Zhang, Man Li   +7 more
doaj   +1 more source

An improved method for determining the inversion layer mobility of electrons in trench MOSFETs [PDF]

, 2003
For the first time trench sidewall effective electron mobility (/spl mu//sub eff/) values were determined by using the split capacitance-voltage (CV) method for a large range of transversal effective field (E/sub eff/) from 0.1 up to 1.4 MV/cm.
Heuvel, M.G.L. van den, Hijzen, E.A., Hueting, R.J.E., Zandt, M.A.A. in 't   +3 more
core   +3 more sources

Conductive Bonding and System Architectures for High‐Performance Flexible Electronics

Advanced Functional Materials, EarlyView.
This review outlines bonding technologies and structural design strategies that support high‐performance flexible and stretchable electronics. Bonding approaches such as surface‐activated bonding and anisotropic conductive films, together with system‐level architectures including buffer layers and island‐bridge structures, possess distinct mechanical ...
Kazuma Nakajima, Kenjiro Fukuda
wiley   +1 more source