Results 41 to 50 of about 14,758 (228)
Here, a biointerface membrane engineered with site‐specific interfacial properties is developed. During implantation between gingival and bone defect, the membrane creates a pro‐osteogenic microenvironment, precisely modulates cellular activities at each biointerface, and facilitates the orchestration of complex healing events, ultimately leading to ...
Yuwei Zhu +13 more
wiley +1 more source
This study proposes an AlGaN/GaN current aperture vertical electron transistor (CAVET) featuring a double superjunction (SJ) to enhance breakdown voltage (BV) and investigates its electrical characteristics via technology computer-aided design (TCAD ...
Jong-Uk Kim +3 more
doaj +1 more source
A phototransistor is described in which there is included as a part of its integral structure an auxiliary diode in the form of an added base-collector junction.
Mccann, D. H.
core +1 more source
Very high performance 50 nm T-gate III-V HEMTs enabled by robust nanofabrication technologies [PDF]
In this paper, we review a range of nanofabrication techniques which enable the realization of uniform, high yield, high performance 50 nm T-gate III-V high electron mobility transistors (HEMTs). These technologies have been applied in the fabrication of
Boyd, E. +8 more
core +1 more source
Frontier Advances of Emerging High‐Entropy Anodes in Alkali Metal‐Ion Batteries
Recent advances in microscopic morphology control of high‐entropy anode materials for alkali metal‐ion batteries. Abstract With the growing demand for sustainable energy, portable energy storage systems have become increasingly critical. Among them, the development of rechargeable batteries is primarily driven by breakthroughs in electrode materials ...
Liang Du +14 more
wiley +1 more source
To enhance the electrical safe operation area (eSOA) of laterally diffused metal oxide semiconductor (LDMOS) transistors, a novel reduced surface electric field (Resurf) structure in the n-drift region is proposed, which was fabricated by ion ...
Lianjie Li +3 more
doaj +1 more source
A novel active quenching circuit for single photon detection with Geiger mode avalanche photodiodes
In this paper we present a novel construction of an active quenching circuit intended for single photon detection. For purpose of evaluation, we have combined this circuit with a standard avalanche photodiode C30902S to form a single photon detector.
Brown +16 more
core +1 more source
Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors [PDF]
We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, diamond), relative to silicon, for power electronics applications.
Chow T. Paul +4 more
core +2 more sources
Gold bipyramids can act as efficient plasmonic nanoheaters, but they often reshape during laser heating. This study shows that oxygen nanobubbles drive oxidative etching and that surface ligands control stability. CTAB‐ and citrate‐coated particles blunt and lose optical performance, whereas polystyrene sulfonate preserves shape and heating by ...
Irene López‐Sicilia +7 more
wiley +1 more source
Application of large area SiPMs for the readout of a plastic scintillator based timing detector [PDF]
In this study an array of eight 6 mm x 6 mm area SiPMs was coupled to the end of a long plastic scintillator counter which was exposed to a 2.5 GeV/c muon beam at the CERN PS. Timing characteristics of bars with dimensions 150 cm x 6 cm x 1 cm and 120 cm
Betancourt, C. +12 more
core +5 more sources

