Results 1 to 10 of about 6,733 (201)

The ESD Robustness and Protection Technology of P-GaN HEMT [PDF]

open access: yesMicromachines
This work first analyzes the failure behaviors of P-GaN HEMTs with different gate structures (Schottky gate vs. Ohmic gate) under both forward and reverse ESD stresses.
Yijun Shi   +5 more
doaj   +2 more sources

Graphene-Based ESD Protection for Future ICs [PDF]

open access: yesNanomaterials, 2023
On-chip electrostatic discharge (ESD) protection is required for all integrated circuits (ICs). Conventional on-chip ESD protection relies on in-Si PN junction-based device structures for ESD.
Cheng Li   +5 more
doaj   +2 more sources

A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection [PDF]

open access: yesMicromachines, 2023
To cope with the much narrower ESD design window in 28 nm CMOS technology, a novel diode-triggered silicon-controlled rectifier with an extra discharge path (EDP-DTSCR) for ESD protection is proposed in this paper.
Zeen Han   +6 more
doaj   +2 more sources

Exploration of a Novel Electric-Fuse Device with a Simple Structure of Ni Metal on a SiO2 Dielectric for Electrostatic Discharge Protection under a Human Body Model [PDF]

open access: yesMicromachines
On-chip electrostatic discharge (ESD) protection poses a challenge in the chip fabrication process. In this study, a novel electric fuse (E-fuse) device featuring a simple structure of Ni metal on a SiO2 dielectric for ESD protection was proposed, and ...
He Guan   +4 more
doaj   +2 more sources

Field-Circuit Co-Simulation Method for Electrostatic Discharge Investigation in Electronic Products

open access: yesIEEE Access, 2021
Electrostatic discharge (ESD) plays an important role in the hard or soft failure of electronic products due to its high voltage, strong electric field, instantaneous high current, and a wide spectrum electromagnetic radiation.
Lanlan Yang   +4 more
doaj   +1 more source

Design for EMI/ESD Immunity for Flexible and Wearable Electronics

open access: yesIEEE Journal of the Electron Devices Society, 2023
Proliferation of flexible, wearable and portable electronics come with new challenges of system reliability. Particularly, flexible and wearable electronics cause more frequent and are more susceptible to electromagnetic interference (EMI) effects and ...
Zijin Pan   +4 more
doaj   +1 more source

Methodology of testing positive attitudes to electrostatic discharges — measuring position [PDF]

open access: yesBiuletyn Wojskowej Akademii Technicznej, 2020
One of the most common causes of damage to electronic devices is electrostatic discharge — ESD for short. They arise during the normal use of the equipment by the operator who in adverse conditions (dry air and electrifying materials) can charge ...
Kamil Białek   +2 more
doaj   +1 more source

The Role of Inorganic Fillers in Electrostatic Discharge Composites

open access: yesInorganics, 2022
The occurrence of uncontrolled electrostatic discharge (ESD) is among the major causes of damage in unprotected electronic components during industrial processes.
Roberto Nisticò   +4 more
doaj   +1 more source

Analyze Scalable Sudoku-Type DTSCR ESD Protection Array Structures in 22nm FDSOI

open access: yesIEEE Journal of the Electron Devices Society, 2021
This paper reports the design and analysis of scalable Sudoku-type diode-triggered silicon-controlled rectifier (DTSCR) electrostatic discharge (ESD) protection structures fabricated in a foundry 22nm fully-depleted silicon-on-insulator (FDSOI ...
Cheng Li   +5 more
doaj   +1 more source

Self-Induced Localized Electric-Field-Enhanced Electrostatic Electron Emission in Polypropylene Surface-Based Roll-to-Roll Manufacturing

open access: yesIEEE Access, 2020
The roll-to-roll (RtR) Manufacturing can produce a large amount of electrostatic charges. In terms of industrial safety, a large amount of energy can be released via electrostatic discharge (ESD) that can cause severe shocks, which can be a risk to ...
Khomsan Ruangwong   +2 more
doaj   +1 more source

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