Results 1 to 10 of about 138,462 (342)
Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots
In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental methods.
Demid S. Abramkin +10 more
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The origin of the contrast appearing in STM images at the boundary between diverse ordered structures is studied using the example of two structures, (7 × 7)N and (8 × 8), formed in the system of a two-dimensional silicon nitride layer on the Si(111 ...
Vladimir Mansurov +5 more
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Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration
The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural ...
Mikhail O. Petrushkov +12 more
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Besides high-power light-emitting diodes (LEDs) with dimensions in the range of mm, micro-LEDs (μLEDs) are increasingly gaining interest today, motivated by the future applications of μLEDs in augmented reality displays or for nanometrology and sensor ...
Stefan Wolter +11 more
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Lattice modulation strategies for 2D material assisted epitaxial growth
As an emerging single crystals growth technique, the 2D-material-assisted epitaxy shows excellent advantages in flexible and transferable structure fabrication, dissimilar materials integration, and matter assembly, which offers opportunities for novel ...
Qi Chen +7 more
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Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A
We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature.
Artur Tuktamyshev +6 more
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Remote epitaxy has opened novel opportunities for advanced manufacturing and heterogeneous integration of two-dimensional (2D) materials and conventional (3D) materials.
Xuejing Wang +3 more
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The integration of different electronic materials systems together has gained increasing interest in recent years, with the III-nitrides being a favorable choice for a variety of electronic applications.
Caroline E. Reilly +7 more
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Induced Ferromagnetism in Epitaxial Uranium Dioxide Thin Films
Actinide materials have various applications that range from nuclear energy to quantum computing. Most current efforts have focused on bulk actinide materials.
Yogesh Sharma +15 more
doaj +1 more source
Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si [PDF]
Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates.
Dubrovskii, Vladimir G. +8 more
core +2 more sources

