Results 91 to 100 of about 138,462 (342)

Role of Liquid Composition in the Transient Liquid Assisted Growth of Superconducting YBa2Cu3O7‐δ Films

open access: yesAdvanced Materials, EarlyView.
The Y supersaturation in the [Ba‐Cu(I/II)‐O] transient liquid composition is the driving force toward YBCO nucleation and growth in TLAG. Tuning the initial (Ba:Cu) molar ratio in the ink composition determines the YBCO epitaxial nucleation through supersaturation control.
Lavinia Saltarelli   +12 more
wiley   +1 more source

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

open access: yesBeilstein Journal of Nanotechnology, 2018
In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy.
Alexey D. Bolshakov   +9 more
doaj   +1 more source

Microscopic Insights into Magnetic Warping and Time‐Reversal Symmetry Breaking in Topological Surface States of Rare‐Earth‐Doped Bi2Te3

open access: yesAdvanced Materials, EarlyView.
Magnetic doping of the topological insulator Bi2Te3 with erbium adatoms induces out‐of‐plane magnetism and breaks time‐reversal symmetry, opening a Dirac gap and driving a Fermi surface transition from hexagonal to star‐of‐David geometry. Microscopy, spectroscopy, and magnetic dichroism reveal atomically controlled magnetic interactions that tailor the
Beatriz Muñiz Cano   +18 more
wiley   +1 more source

Reduction of thermal conductivity by nanopillar inclusion in thermoelectric vertically aligned nanocomposites

open access: yesJPhys Energy
The phonon-glass electron-crystal paradigm has guided thermoelectric research in recent years. However, the inherent conflict between atomic disorder reducing phonon conduction, and the order required to maintain high electron mobility, creates a ...
Marijn W van de Putte   +8 more
doaj   +1 more source

Properties of epitaxial, (001)- and (110)-oriented (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 films on silicon described by polarization rotation

open access: yesScience and Technology of Advanced Materials, 2016
Epitaxial (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 (PMN-PT) films with different out-of-plane orientations were prepared using a CeO2/yttria stabilized ZrO2 bilayer buffer and symmetric SrRuO3 electrodes on silicon substrates by pulsed laser deposition.
Muhammad Boota   +7 more
doaj   +1 more source

Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

open access: yesCrystals, 2017
Epitaxial growth of diamond films on different facets of synthetic IIa-type single crystal (SC) high-pressure high temperature (HPHT) diamond substrate by a microwave plasma CVD in CH4-H2-N2 gas mixture with the high concentration (4%) of nitrogen is ...
Evgeny E. Ashkinazi   +5 more
doaj   +1 more source

Decoupling of epitaxy‐related trapping effects in AlGaN/GaN metal–insulator semiconductor high‐electron‐mobility transistors [PDF]

open access: green, 2016
Martin Huber   +7 more
openalex   +1 more source

Resonant Interlayer Coupling in NbSe2‐Graphite Epitaxial Moiré Superlattices

open access: yesAdvanced Materials, EarlyView.
Combining angle‐resolved photoemission spectroscopy and density functional theory derived calculations, this work reveals strong interlayer coupling and moiré replicas of the graphite π states in molecular‐beam epitaxy grown van der Waals heterostructures of monolayer‐NbSe2/graphite, with implications for its collective phases that form. Abstract Moiré
Shu Mo   +11 more
wiley   +1 more source

Advancing the Growth of GaN on AlScN and AlYN by Metal–Organic Chemical Vapor Deposition

open access: yesAdvanced Physics Research
High electron mobility transistors (HEMT) based on Al1‐xScxN/GaN and Al1‐xYxN/GaN heterostructures promise increased device performance and reliability due to the high sheet charge carrier density and the possibility to grow strain‐free layers on GaN ...
Isabel Streicher   +12 more
doaj   +1 more source

Growth of Ordered Graphene Ribbons by Sublimation Epitaxy

open access: yesCrystals, 2018
Ordered graphene ribbons were grown on the surface of 4° off-axis 4H-SiC wafers by sublimation epitaxy, and characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman).
Shuxian Cai   +3 more
doaj   +1 more source

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