Results 91 to 100 of about 103,571 (282)

Microwave Absorption for Detection of Dirac Fermions in SnTe Films

Advanced Materials Interfaces, EarlyView.
Microwave absorption can detect Dirac fermions in samples exposed to the atmosphere. Results showed that although topological surface states are robust against environmental degradation, they are not detectable by electrical transport measurements. Hence, microwave absorption can detect Dirac fermions even in samples whose surfaces have deteriorated ...
Wellington P. do Prado, Jorge A. Navarro‐Giraldo, Muhammad Tahsin, Vinicius T. Santana, Eduardo Abramof, Paulo H. O. Rappl, Suelen de Castro, Marcelos L. Peres, Petr Neugebauer   +8 more
wiley   +1 more source

Reduction of thermal conductivity by nanopillar inclusion in thermoelectric vertically aligned nanocomposites

JPhys Energy
The phonon-glass electron-crystal paradigm has guided thermoelectric research in recent years. However, the inherent conflict between atomic disorder reducing phonon conduction, and the order required to maintain high electron mobility, creates a ...
Marijn W van de Putte, Jasman Singh Gambhir, Nicolas Gauquelin, Alexandros Sarantopoulos, Daniel Monteiro Cunha, Johan Verbeeck, Gertjan Koster, Francisco Rivadulla, Mark Huijben   +8 more
doaj   +1 more source

Properties of epitaxial, (001)- and (110)-oriented (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 films on silicon described by polarization rotation

Science and Technology of Advanced Materials, 2016
Epitaxial (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 (PMN-PT) films with different out-of-plane orientations were prepared using a CeO2/yttria stabilized ZrO2 bilayer buffer and symmetric SrRuO3 electrodes on silicon substrates by pulsed laser deposition.
Muhammad Boota, Evert P. Houwman, Matthijn Dekkers, Minh D. Nguyen, Kurt H. Vergeer, Giulia Lanzara, Gertjan Koster, Guus Rijnders   +7 more
doaj   +1 more source

Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

Crystals, 2017
Epitaxial growth of diamond films on different facets of synthetic IIa-type single crystal (SC) high-pressure high temperature (HPHT) diamond substrate by a microwave plasma CVD in CH4-H2-N2 gas mixture with the high concentration (4%) of nitrogen is ...
Evgeny E. Ashkinazi, Roman A. Khmelnitskii, Vadim S. Sedov, Andrew A. Khomich, Alexander V. Khomich, Viktor G. Ralchenko   +5 more
doaj   +1 more source

Exploring the Potential of Microwave Annealing for Enhancing Si‐based GeSn Lasers

Advanced Materials Technologies, EarlyView.
We explore low‐thermal‐budget microwave annealing to enhance the performance of group‐IV GeSn lasers on Si. Microwave annealing under optimal conditions can simultaneously relax unwanted compressive strain and enhance the material quality of the GeSn active layer, thereby reducing the threshold and increasing the laser operating temperature.
Yue‐Tong Jheng, Cheng‐Feng Liu, Ruei‐Jhang Wang, Yu Cheng, Lung‐Yi Hsu, Yonder Berencén, Shengqiang Zhou, Hanh Thi‐Thu Tran, Guo‐En Chang   +8 more
wiley   +1 more source

Advancing the Growth of GaN on AlScN and AlYN by Metal–Organic Chemical Vapor Deposition

Advanced Physics Research
High electron mobility transistors (HEMT) based on Al1‐xScxN/GaN and Al1‐xYxN/GaN heterostructures promise increased device performance and reliability due to the high sheet charge carrier density and the possibility to grow strain‐free layers on GaN ...
Isabel Streicher, Niklas Wolff, Teresa Duarte, Oliver Rehm, Patrik Straňák, Lutz Kirste, Mario Prescher, Xuyun Guo, Valeria Nicolosi, Lutz Baumgarten, Martina Müller, Lorenz Kienle, Stefano Leone   +12 more
doaj   +1 more source

Investigation of Defect Propagation in 4H-SiC: From Substrate to Epitaxial Layers

Applied Sciences
Silicon carbide (SiC) is the leading wide bandgap semiconductor for high-power and high-temperature electronics, but the high defect density still limits device performance.
Francesco Maria Fiorino, Francesco Ruffino, Alberto Catena   +2 more
doaj   +1 more source

Growth of Ordered Graphene Ribbons by Sublimation Epitaxy

Crystals, 2018
Ordered graphene ribbons were grown on the surface of 4° off-axis 4H-SiC wafers by sublimation epitaxy, and characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman).
Shuxian Cai, Xingfang Liu, Xin Zheng, Zhonghua Liu   +3 more
doaj   +1 more source

High‐Throughput Screening of REBCO Superconducting Thin Films Fabricated Via Combinatorial Inkjet Printing and TLAG Process

Advanced Materials Technologies, EarlyView.
A methodological framework is presented for combinatorial REBCO thin films fabricated by drop‐on‐demand inkjet printing with controlled Rare Earth composition gradients. Automated, synchrotron‐based, and local characterization techniques produce comprehensive property maps that correlate composition and TLAG process parameters with superconducting ...
Emma Ghiara, Zeyu Wu, Mahel Voulhoux, Ona Mola Bertran, Vittorio Bertini, Carla Torres, Aiswarya Kethamkuzhi, Guilherme Theophilo Telles, Victor Fuentes, Elzbieta Pach, Cornelia Pop, Eduardo Solano, Kapil Gupta, Takanobu Kiss, Xavier Obradors, Teresa Puig   +15 more
wiley   +1 more source

Epitaxy

Citation: 'epitaxy' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.09487 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms ...
openaire   +2 more sources