Results 101 to 110 of about 103,571 (282)

Optical Characterization of AlAsSb Digital Alloy and Random Alloy on GaSb

Crystals, 2017
III-(As, Sb) alloys are building blocks for various advanced optoelectronic devices, but the growth of their ternary or quaternary materials are commonly limited by spontaneous formation of clusters and phase separations during alloying.
Bor-Chau Juang, Baolai Liang, Dingkun Ren, David L. Prout, Arion F. Chatziioannou, Diana L. Huffaker   +5 more
doaj   +1 more source

Spectroscopy studies of straincompensated mid-infrared QCL active regions on misoriented substrates [PDF]

, 2014
In this work, we perform spectroscopic studies of AlGaAs/InGaAs quantum cascade laser structures that demonstrate frequency mixing using strain-compensated active regions.
Cheng, Emily, Grayer, Justin, Meyer, Charles, Roberts, Denzil, Triplett, Gregory Edward   +4 more
core   +1 more source

GaN Mid‐IR Plasmonics: Low‐Loss Epsilon‐Near‐Zero Modes

Advanced Optical Materials, EarlyView.
This work reports the first comprehensive experimental study of heavily doped GaN as an epsilon‐near‐zero (ENZ) material, including the demonstration of a plasmonic ENZ mode in GaN thin films on Si, and establishes GaN as a viable platform for mid‐IR ENZ‐based plasmonics. ATR measurements and TMM modelling enable detailed analysis of the hybrid surface
Julia Inglés‐Cerrillo, Maria Villanueva‐Blanco, Benjamin Damilano, Stéphane Vézian, Miguel Montes Bajo, Adrian Hierro   +5 more
wiley   +1 more source

Multi‐Dielectric Metasurfaces for Ultrabright, Tunable Structural Color and Reconfigurable Optical Filtering with Extraordinarily Large Color Span

Advanced Optical Materials, EarlyView.
Structural color generation is an emerging field for digital display and printing applications. This report presents a novel truncated‐cone design and the first use of GaP sandwiched between two layers of TiO2, demonstrating ultra‐bright, tunable colors with a record color gamut.
Md Rumon Miah, Yavuz Selim Aydın, Hilmi Volkan Demir   +2 more
wiley   +1 more source

Atomic‐Scale Epitaxy for Tailoring Crystalline GeSbTe Alloys Into Bidimensional Phases

Advanced Materials Interfaces
In this study, we establish an accurate growth diagram—describing the phase, composition, and atomic stacking of Ge‐Sb‐Te alloys (GST)—that can be used as a prediction tool for thin film deposition.
Valeria Bragaglia, Fabrizio Arciprete, Simone Prili, Yukihiko Takagaki, Antonio Massimiliano Mio, Riccardo Mazzarello, Jos Emiel Boschker, Raffaella Calarco   +7 more
doaj   +1 more source

Harnessing Ultrafast Optical Pulses for 3D Microfabrication by Selective Tweezing and Immobilization of Colloidal Particles in an Integrated System

Advanced Photonics Research, Volume 6, Issue 5, May 2025.
Microfabrication using nano‐ to micron‐sized blocks has transformative potential for next‐gen electronics, optoelectronics, and materials. Traditional methods are limited by scalability and precision. STIC, a single‐laser system for precise colloid manipulation and immobilization using femtosecond lasers, is introduced that enables efficient 3D ...
Krishangi Krishna, Jieliyue Sun, Wenyu Liu, Robert H. Hurt, Kimani C. Toussaint Jr.   +4 more
wiley   +1 more source

Solar Hydrogen Production with Metal/III–V Semiconductor Junction Monolithically Integrated on Si

ChemElectroChem
GaAs is an excellent candidate for high‐performance photoelectrochemical water splitting due to its appropriate band‐edge and bandgap energies, as well as its excellent transport properties.
Hanh Vi Le, Rozenn Bernard, Ludovic Largeau, Gilles Patriarche, Sylvain Febvre, Fatima Merhi, Bienvenu Boulingui Koumba, Antoine Létoublon, Christophe Levallois, Fauzia Jabeen, Sylvie Harel, Angus Rockett, Xerxes K. Steirer, Tony Rohel, Karine Tavernier, Julie Le Pouliquen, Yoan Léger, Nicolas Bertru, Bruno Fabre, Gabriel Loget, Charles Cornet   +20 more
doaj   +1 more source

Direct Growth of Transparent Boron Nitride Neutron Shielding Layer for Space Window

Advanced Science, EarlyView.
Direct growth of sp2‐sp3 hybridized BN (HBN) on quartz, enabled by an h‐BN buffer, produces transparent and stable films up to 80 µm thick with high transmittance and strong neutron shielding, making HBN a promising candidate for space windows in long‐term lunar missions.
Dobin Kim, Geunpil Kim, Hwijoon Jeong, Sk Mujaffar Hossain, Satadeep Bhattacharjee, Minjae Isaac Kwon, Yeunjeong Lee, Chanhee Yang, Yeong Seok Ham, Taek‐Soo Kim, Hyowon Moon, Inkyu Park, Seung‐Cheol Lee, Jinhwan Kim, Jongbum Kim, Jaehyun Park   +15 more
wiley   +1 more source

Borophene: Crucial Challenges and the Way Forward

Advanced Science, EarlyView.
This review explores the challenges and progress in borophene research, focusing on synthesis strategies, structural properties, and potential applications. It highlights key experimental breakthroughs, discusses theoretical insights into borophene's unique features, and addresses pathways for overcoming stability and scalability issues.
Zhixuan Li, Jeyaraman Sankar, Prashant Kumar, Ajayan Vinu   +3 more
wiley   +1 more source

Formation of MOS-transistors with isolation of active elements by oxiden porous silicon [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2009
The superthin functional layers of MOS-transistors require qualitative isolation of active elements. The new method of formation of epitaksial structures for technology «silicon - on-isolator» is offered on the basis of porous silicon.
Novosyadlyi S. P., Vivcharuk V. M.
doaj