Results 111 to 120 of about 138,462 (342)

Atomic‐Scale Epitaxy for Tailoring Crystalline GeSbTe Alloys Into Bidimensional Phases

Advanced Materials Interfaces
In this study, we establish an accurate growth diagram—describing the phase, composition, and atomic stacking of Ge‐Sb‐Te alloys (GST)—that can be used as a prediction tool for thin film deposition.
Valeria Bragaglia, Fabrizio Arciprete, Simone Prili, Yukihiko Takagaki, Antonio Massimiliano Mio, Riccardo Mazzarello, Jos Emiel Boschker, Raffaella Calarco   +7 more
doaj   +1 more source

Giant Berry‐phase‐Driven X‐Ray Beam Translations in Strain‐Engineered Semiconductor Crystals

Advanced Materials, EarlyView.
Due to the Berry‐phase effect, X‐rays propagating in deformed crystals undergo large translations, interesting for X‐ray optics applications. Here, the lattice expansion observed upon H irradiation of dilute‐nitride semiconductors is exploited to engineer the deformation landscape of selectively hydrogenated GaAsN epilayers.
Marco Felici, Giorgio Pettinari, Michela Fratini, Luisa Barba, Simone Birindelli, Gaetano Campi, Silvia Rubini, Tobias Schülli, Mario Capizzi, Antonio Polimeni   +9 more
wiley   +1 more source

Solar Hydrogen Production with Metal/III–V Semiconductor Junction Monolithically Integrated on Si

ChemElectroChem
GaAs is an excellent candidate for high‐performance photoelectrochemical water splitting due to its appropriate band‐edge and bandgap energies, as well as its excellent transport properties.
Hanh Vi Le, Rozenn Bernard, Ludovic Largeau, Gilles Patriarche, Sylvain Febvre, Fatima Merhi, Bienvenu Boulingui Koumba, Antoine Létoublon, Christophe Levallois, Fauzia Jabeen, Sylvie Harel, Angus Rockett, Xerxes K. Steirer, Tony Rohel, Karine Tavernier, Julie Le Pouliquen, Yoan Léger, Nicolas Bertru, Bruno Fabre, Gabriel Loget, Charles Cornet   +20 more
doaj   +1 more source

Optical investigations of surface processes in GaP heteroepitaxy on silicon under pulsed chemical beam epitaxy conditions [PDF]

, 1996
U. Rossów, N. Dietz, K. J. Bachmann, D. E. Aspnes   +3 more
openalex   +1 more source

Spectral Tuning of Hyperbolic Shear Polaritons in Monoclinic Gallium Oxide via Isotopic Substitution

Advanced Materials, EarlyView.
Spectral tuning of highly directional hyperbolic shear polaritons is realized via isotopic substitution of 16O to 18O in monoclinic β$\beta$‐phase gallium oxide. A red‐shift of almost 40 cm−1 is experimentally demonstrated with near‐field imaging, corroborated by the permittivity change extracted from far‐field experiments and density functional theory.
Giulia Carini, Mohit Pradhan, Elena Gelžinytė, Andrea Ardenghi, Saurabh Dixit, Maximilian Obst, Aditha S. Senarath, Niclas S. Mueller, Gonzalo Álvarez‐Pérez, Katja Diaz‐Granados, Ryan A. Kowalski, Richarda Niemann, Felix G. Kaps, Jakob Wetzel, Raghunandan Balasubramanyam Iyer, Piero Mazzolini, Mathias Schubert, J. Michael Klopf, Johannes T. Margraf, Oliver Bierwagen, Martin Wolf, Karsten Reuter, Lukas M. Eng, Susanne C. Kehr, Joshua D. Caldwell, Christian Carbogno, Thomas G. Folland, Markus R. Wagner, Alexander Paarmann   +28 more
wiley   +1 more source

Structure of AlN on Si (111) Deposited with Metal Organic Vapor Phase Epitaxy [PDF]

, 1999
Eric Rehder, M. Zhou, L. Zhang, Nathan Perkins, S.E. Babcock, T. F. Kuech   +5 more
openalex   +1 more source

Performance Constraints of All‐Perovskite Tandem Solar Cells in Low‐Intensity, Low‐Temperature Environments

Advanced Materials, EarlyView.
All‐perovskite tandem solar cells are evaluated under low‐intensity and low‐temperature (LILT) conditions relevant to space environments. Distinct loss regimes emerge, where weaker entropic mixing causes halide segragation below ≈240 K going along with a strong current imbalance, while poor electron transport in C60 dominates.
Sercan Ozen, Etienne Beier, Francisco Peña‐Camargo, Jarla Thiesbrummel, Gianluca Boccarella, Paria Forozi Sowmeeh, Martin Stolterfoht, Dieter Neher, Kai Oliver Brinkmann, Thomas Riedl, Felix Lang   +10 more
wiley   +1 more source

Formation of MOS-transistors with isolation of active elements by oxiden porous silicon [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2009
The superthin functional layers of MOS-transistors require qualitative isolation of active elements. The new method of formation of epitaksial structures for technology «silicon - on-isolator» is offered on the basis of porous silicon.
Novosyadlyi S. P., Vivcharuk V. M.
doaj  

Auger electron and x-ray photoelectron spectroscopy of monocrystalline layers of KTa1−xNbxO3 grown by liquid-phase epitaxy [PDF]

, 1991
R. Gutmann, J. Hulliger, Roland Hauert, Eva Maria Moser   +3 more
openalex   +1 more source

From Thin Films to Nanodots: Bottom‐Up Integration of Fe3O4 on Nb:STO for Functional Oxide Nanostructures

Advanced Materials, EarlyView.
Scalable bottom‐up fabrication of Fe3O4 nanodots on Nb:SrTiO3 using anodic alumina templates enables long‐range ordered arrays with diameters down to 30 nm. STEM highlights the epitaxial growth of Fe3O4 films on Nb:SrTiO3. Complementary polarized neutron reflectometry (PNR) and X‐ray magnetic circular dichroism (XMCD) measurements on continuous films ...
Yifan Xu, Connie Bednarski‐Meinke, Yen‐Po Liu, Erkai Wang, Asma Qdemat, Peijia Yuan, Lilian Maria Vogl, Patrick Schöffmann, Thomas Saerbeck, Chenyang Yin, Gerhard Dehm, Felix Gunkel, Regina Dittmann, Oleg Petracic, Mai Hussein Hamed   +14 more
wiley   +1 more source