Results 111 to 120 of about 103,571 (282)
The Origin of Efficiency in III‐Nitride Micro‐Light‐Emitting Diodes
Advanced Science, EarlyView.The images show panchromatic cathodoluminescence of III‐V materials, which reveal that AlGaInP red wafers, having fewer defects, support longer carrier diffusion lengths. Meanwhile, the density of defects increases with longer emission wavelengths in the InGaN system, illustrating how generated carriers pass through the material and how defects limit ...
Jeong‐Hwan Park +11 more
wiley +1 more source
Development of a Nb‐Based Semiconductor‐Superconductor Hybrid 2DEG Platform
Advanced Electronic MaterialsSemiconductor‐superconductor hybrid materials are used as a platform to realize Andreev bound states, which hold great promise for quantum applications.
Sjoerd Telkamp +14 more
doaj +1 more source
Advanced Science, EarlyView.Ferroelectric phase stability in Hf₀.5Zr₀.5O2 films is enhanced by confinement to the (111) crystal orientation, as demonstrated by first‐principles calculations and experiments. Polarization approaching its maximum value is achieved through selective ferroelectric switching paths, which are further tuned by oxygen vacancies and cation doping to ...
Fatoye Sawyerr +14 more
wiley +1 more source
Advanced Science, EarlyView.Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami +5 more
wiley +1 more source
Strain Programming of Oxygen Octahedral Symmetry in Perovskite Oxide Thin Films
Advanced Materials InterfacesThe collective rotations of oxygen octahedra play an important role in determining the physical properties of functional perovskite oxides. The epitaxial strain can serve as an effective means to modify the oxygen octahedral symmetry (OOS), i.e., oxygen ...
Yunkyu Park +12 more
doaj +1 more source
Advanced Science, EarlyView.We show that interfacial oxygen at the MgO/Fe interface can be transformed from an uncontrolled variable into a tunable design parameter for spintronic junctions. Momentum microscopy provides direct access to the momentum‐ and spin‐resolved electronic structure beneath the insulating MgO layers, revealing how oxygen intercalation reshapes buried Fe ...
David Maximilian Janas +14 more
wiley +1 more source
Advanced Science, EarlyView.Hyperfine coupling to 29Si$^{29}{\rm Si}$ and 73Ge$^{73}{\rm Ge}$ nuclear spins limits hole spin‐qubit coherence in Ge heterostructures. We demonstrate device‐grade, nuclear‐spin‐free 70Ge$^{70}{\rm Ge}$/28Si70Ge$^{28}{\rm Si}^{70}{\rm Ge}$ quantum wells grown on industrial SiGe buffers with minimal use of enriched precursors.
Patrick Daoust +11 more
wiley +1 more source
JPhys MaterialsHerein, we describe a comparative study of the ferroelectric properties of epitaxial Hf _0.5 Zr _0.5 O _2 films grown on La _0.67 Sr _0.33 MnO _3 /SrTiO _3 (100) and La _0.67 Sr _0.33 MnO _3 /DyScO _3 (110) across a temperature range of 32–298 K for the ...
J W Adkins +4 more
doaj +1 more source
Energy‐Resolved Femtosecond Dynamics of Plasmon‐Induced Hole Injection at Au/GaN Heterointerfaces
Advanced Science, EarlyView.We reveal the spectral signature of ultrafast nonthermal hot‐hole transfer at plasmonic heterointerfaces, which reshapes hot‐carrier relaxation dynamics and significantly enhances hydrogen evolution, providing a mechanistic basis for optimizing hot‐carrier utilization in photocatalysis.
Yuying Gao +8 more
wiley +1 more source
Multi‐Physical Field Modulated P‐Bit Device Based on VO2 Thin Film
Advanced Science, EarlyView.We have proposed a VO2‐based P‐bit device where synergistic multi‐physical field modulation enables real‐time tunability of randomness. Besides introducing a new phase‐change material‐based device approach for high‐performance P‐bits, this study also demonstrates a synergistic multi‐physical field modulation strategy that opens new opportunities for ...
Bowen Sun +10 more
wiley +1 more source