Results 121 to 130 of about 103,571 (282)

Tuning Defects in Ni‐Doped Maghemite for Enhanced Solar Driven Oxygen Evolution: Insights From Operando X‐Ray Spectroscopies

Advanced Science, EarlyView.
ABSTRACT Maghemite (γ$\gamma$‐Fe2${\rm Fe}_2$O3${\rm O}_{3}$) is a promising non‐precious‐metal‐containing photocatalyst for water oxidation (OER). Despite being less studied than Hematite, it offers similar corrosion resistance and a favorable band structure, along with higher conductivity and the advantage of an adaptable spinel structure.
Francesco Paparoni, Hélène Magnan, Antoine Barbier, Andrea Zitolo, AndreaDi Cicco, Javad Rezvani, Emiliano Fonda   +6 more
wiley   +1 more source

Graphene-based optical modulators for next generation datacom

, 2019
C
Alessandri, Chiara, Asselberghs, Inge, Brems, Steven, Huygebaert, Cedric, Pantouvaki, Marianne, Van Campenhout, Joris, Van Thourhout, Dries   +6 more
core   +1 more source

Dynamic Hydrogen‐Bonding Nanonetworks and Asymmetric Dual‐Interface Built‐In Electric Fields Cooperatively Mediate Proton‐Coupled Electron Transfer for C─H Activation

Advanced Science, EarlyView.
The general strategy for constructing proton–electron dual‐transport‐channel photocatalysts (hollow Co3S4/Sv‐chalcogenide/Ti3C2 nanoreactors) is developed. Theses ternary‐component nanoreactors feature dynamic hydrogen‐bonding nanonetworks as proton‐transport channels and asymmetric dual‐interface BIEFs as electron‐transport channels, serving as a ...
Yi‐Wen Han, Run‐Yu Liu, Yu Chen, Lei Ye, Tian‐Jun Gong, Xue‐Bin Lu, Ning Yan, Yao Fu   +7 more
wiley   +1 more source

Thick layers liquid-phase epitaxy method

Технологія та конструювання в електронній апаратурі, 2013
On the basis of the authors' model of mass transfer, a new method for thick layers epitaxy has been developed. The method provides for the growth of different parts of the layers in two-layer systems obtained from the solution-melt and allows to control ...
S. N. Dranchuk, V. A. Zavadskiy, V. A. Mokritskiy   +2 more
doaj  

Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware

Advanced Science, EarlyView.
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal, Yeong‐Her Wang, Sanjay Kumar, Themis Prodromakis   +3 more
wiley   +1 more source

Synaptic κ‐Ga2O3 Photodetectors for Privacy‐Enhancing Neuromorphic Computing

Advanced Science, EarlyView.
We report on a single‐element neuromorphic sensor based on the persistent photoconductivity (PPC) of κ‐phase Ga2O3 capable of sensing ultraviolet light and harnessing intrinsic data privacy. The approach establishes a materials‐enabled pathway toward compact, intelligent, and privacy‐enhancing optoelectronic hardware for next‐generation edge systems ...
Yanqing Jia, Heming Lin, Hongliang Chang, Wenqing Niu, Yue Wang, Hang Lu, Abdullah AlQuwayzani, Yara Banda, Long Chen, Qingxiao Wang, Bambar Davaasuren, Mohamed Ben Hassine, Tien Khee Ng, Boon S. Ooi   +13 more
wiley   +1 more source

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes

Advanced Electronic Materials, EarlyView.
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Epitaxial Growth of p‐Type β‐Ga2O3 Thin Films and Demonstration of a p–n Diode

Advanced Electronic Materials, EarlyView.
This study demonstrates p‐type conductivity in β‐Ga2O3 via Te–Mg co‐doping using MOCVD. The films show tunable hole concentrations up to 1.78×1017 cm−3, and a fabricated p–n diode exhibits rectifying behavior. Density functional theory reveals that Te introduces an intermediate band, lowering the Mg acceptor ionization energy and enabling p‐type ...
Chuang Zhang, Hanzhao Song, Chee Keong Tan   +2 more
wiley   +1 more source

Domain structures in ferroelectric epitaxial WO3 thin films [PDF]

BIO Web of Conferences
Van Der Veer Ewout, Feringa Stijn, Eckstein Jack, Kooi Bart, Noheda Beatriz   +4 more
doaj   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
wiley   +1 more source