Results 131 to 140 of about 103,571 (282)
Wafer‐Scale Bi2O2Se‐on‐Insulator Thin Films for Integrated Electronics
Wafer‐scale, thickness‐controlled semiconducting Bi2O2Se thin films were grown on 2‐inch insulating sapphire substrates via magnetron sputtering using quasi‐van der Waals epitaxy. The uniform films enable large‐scale fabrication of top‐gated TFT arrays with stable enhancement‐mode operation and functional inverter, NAND, and NOR logic gates.
Xi Chen +4 more
wiley +1 more source
Topological Materials and Related Applications
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti +9 more
wiley +1 more source
Carrier Transport and Electrical Bandgaps in Epitaxial CrN Layers
ABSTRACT The transport properties and electrical bandgap of nominally undoped ≈$\approx$75‐nm‐thick CrN layers simultaneously grown on AlN(0001) and AlN(112¯$\bar{2}$2) templates using plasma‐assisted molecular beam epitaxy are investigated. The layers grown on AlN(0001) and AlN(112¯$\bar{2}$2) exhibit (111) and (113) surface orientations, respectively.
Duc V. Dinh +3 more
wiley +1 more source
A flexible InGaP/GaAs/InGaAs triple‐junction platform encapsulated with ultrathin glass enables unassisted electrocatalysis and space applications by providing robust protection against chemically aggressive and radiation‐rich environments. This work establishes a unified III–V multijunction photovoltaic platform that bridges space photovoltaics and ...
Sukkyu Hong +10 more
wiley +1 more source
Advancements in Graphdiyne‐Based Multiscale Catalysts for Green Hydrogen Energy Conversion
This review systematically explores the fundamental characteristics of graphdiyne (GDY), cutting‐edge field of GDY‐based multiscale catalysts within sustainable energy conversion systems.Special emphasis is placed on the structure‒property relationships in different reactions.
Qian Xiao, Lu Qi, Siao Chen, Yurui Xue
wiley +1 more source
This article outlines how artificial intelligence could reshape the design of next‐generation transistors as traditional scaling reaches its limits. It discusses emerging roles of machine learning across materials selection, device modeling, and fabrication processes, and highlights hierarchical reinforcement learning as a promising framework for ...
Shoubhanik Nath +4 more
wiley +1 more source
This study explores the epitaxial growth of high‐quality La‐doped BiFeO3 (BLFO) thin films at 550 °C using magnetron sputtering. The films exhibit good ferroelectric properties and low leakage current. A BLFO/CoFeB heterostructure is constructed, achieving an exchange bias field exceeding the coercive field at room temperature.
Zhiqin Zhou +10 more
wiley +1 more source
Advances in Regulating Strategies and Applications of Ferroelectric Materials
To meet the demand for precise control of performance in nanoelectronic devices, this paper systematically reviews the latest advances in controlling ferroelectric properties through strategies such as external field modulation, low‐dimensional confinement, interface engineering, and topological structure design.
Jianying Ji, Cong Liu, Dan Luo, Zhou Li
wiley +1 more source
Twist Engineering of Hybrid 2D van der Waals‐Transition Metal Oxide Membranes
The integration of transition metal oxide membranes with 2D van der Waals materials offers exciting opportunities to study new interfacial phenomena. These interactions can create complex moiré patterns that change the materials' properties. Understanding these interactions, influenced by symmetry and distortion, poses significant challenges and ...
Mar Garcia Hernandez +4 more
wiley +1 more source
Substrate-field-modulated remote-van der Waals hybrid epitaxy in transition metal dichalcogenide heterostructures. [PDF]
Handriani LS +8 more
europepmc +1 more source

