Unveiling Controlled Growth of Single‐Crystalline Layered Sb 2 Te 3 Via Van Der Waals Epitaxy for Visible‐Light Photodetectors and Optoelectronic Synapses [PDF]
Shanglin Yang +6 more
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Advanced Science, EarlyView.A thin topological insulator (Bi2Te3) inserted between two single magnetic septuple layers of MnBi2Te4 is shown to convert the intrinsic antiferromagnetic interlayer coupling into robust ferromagnetism. As the Bi2Te3 spacer thickness increases from 1 to 4 quintuple layers, the weakening coercivity, Curie temperature, and interlayer coupling reveal ...
Enayet Hossain +10 more
wiley +1 more source
Atomically Resolved Electron Reflectivity at a Metal/Semiconductor Interface
Advanced Science, EarlyView.An atomically flat interface is achieved in the incoherent Al/Ge heterostructure using molecular beam epitaxy (MBE). Scanning tunneling microscopy (STM) reveals a laterally periodic modulation of electron reflectivity with atomic resolution at the commensurate Al/Ge interfacial lattice, originating from the local electronic states.
Ding‐Ming Huang +5 more
wiley +1 more source
High-Yield Fabrication of Entangled Photon Emitters for Hybrid Quantum Networking Using High-Temperature Droplet Epitaxy [PDF]
, 2017 Francesco Basso Basset +9 more
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Imperfection in Semiconductors Leading to High Performance Devices
Advanced Science, EarlyView.Crystalline perfection is typically pursued in semiconductors to enhance device performance. However, through modeling and experimental work, we show that defects can be strategically employed in a specific detection regime to increase sensitivity to extreme values. GaN diodes are demonstrated to effectively detect high‐energy proton beams at fluxes as
Jean‐Yves Duboz +8 more
wiley +1 more source
ORIENTATIONAL EPITAXY IN ADSORBED MONOLAYERS
, 1977 Anthony D. Novaco, J. P. McTague
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Erratum: “Optical properties of nearly stacking-fault-free m-plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates” [Appl. Phys. Lett. 92, 091912 (2008)] [PDF]
, 2008 Shigefusa F. Chichibu +5 more
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Gallium Nitride Semiconductor Resonant Tunneling Transistor
Advanced Science, EarlyView.Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu +15 more
wiley +1 more source
Unraveling Band‐Tail Effects on Temperature‐Dependent Emission in GaAsBi via Photoluminescence
Advanced Science, EarlyView.An innovative dual‐spectroscopy approach resolves the debate over GaAsBi's emission temperature sensitivity. By combining temperature‐dependent photoluminescence and transmission spectroscopy, the method decouples the contributions of band‐tail states from the intrinsic band‐edge behavior.
Bing Yan +6 more
wiley +1 more source
Advanced Science, EarlyView.In situ observation of VLS growth in a confined microreactor reveals various growth modes of monolayer TMDCs, including abnormal ribbon growth and particle‐driven growth. The confined space and precursor balance influence droplet behavior and growth dynamics, offering new insights into the controlled synthesis of TMDCs via the VLS mechanism.
Hiroo Suzuki +6 more
wiley +1 more source