Results 11 to 20 of about 103,571 (282)
Control of InGaAs facets using metal modulation epitaxy (MME) [PDF]
, 2014 Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs adjacent to patterned features.
Baraskar, Ashish K. +8 more
core +3 more sources
Investigation of laser ablated ZnO thin films grown with Zn metal target: a structural study [PDF]
, 2004 High quality ZnO thin films were gown using the pulsed laser deposition technique on (0001) Al$_2$O$_3$ substrates in an oxidizing atmosphere, using a Zn metallic target.
A. Fouchet +6 more
core +2 more sources
Aging in epitaxial ferroelectric PbTiO3 films [PDF]
Journal of Advanced Dielectrics, 2016 Ability of epitaxial perovskite oxide ferroelectric films to maintain a poled polarization state on a long-term scale is crucial for advanced devices employing such films.
Jari Hannu +4 more
doaj +1 more source
Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si [PDF]
, 2016 Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates.
Dubrovskii, Vladimir G. +8 more
core +2 more sources
Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys [PDF]
, 2013 GaN materials alloyed with group V anions form the so-called highly mismatched alloys (HMAs). Recently, the authors succeeded in growing N-rich GaNAs and GaNBi alloys over a large composition range by plasma-assisted molecular beam epitaxy (PA-MBE). Here,
Detert, D. +10 more
core +1 more source
Tunable Bragg polaritons and nonlinear emission from a hybrid metal-unfolded ZnSe-based microcavity
Scientific Reports, 2017 Strong light-matter interaction in Bragg structures possesses several advantages over conventional microcavity system. These structures provide an opportunity to incorporate a large number of quantum wells without increasing the mode volume.
SK. Shaid-Ur Rahman +4 more
doaj +1 more source
Journal of Telecommunications and Information Technology, 2001 Recent and encouraging developments in Schot- tky and MOS gated Si/SiGe field effect transistors are sur- veyed. Circuit applications are now beginning to be investi- gated.
Terrence E. Whall , Evan H. C. Parker
doaj +1 more source
CVD growth of high speed SiGe HBTs using SiH4
Journal of Telecommunications and Information Technology, 2000 The growth of high frequency HBT structures using silane-based epitaxy has been studied. The integrity of SiGe layers in the base and the control of the collector profile using As- or P-doping grown at 650 oC have been investigated.
Henry H. Radamson +2 more
doaj +1 more source
Cumhuriyet Science Journal, 2021 The aim of the study is to understand the effects of NH3 flow rate in the initial part of high temperature (HT) GaN growth on structural and optical characteristics of the HT-GaN layer grown on dome shaped sapphire susbtrate by Metal Organic Chemical ...
İsmail Altuntas
doaj +1 more source
Freestanding epitaxial SrTiO 3 nanomembranes via remote epitaxy using hybrid molecular beam epitaxy
Science Advances, 2022 The epitaxial growth of functional oxides using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining freestanding epitaxial nanomembranes for scientific study, applications, and economical reuse of substrates.
Hyojin Yoon +14 more
openaire +2 more sources