Results 241 to 250 of about 138,462 (342)

Epitaxy and Phase Stability of 2D Hexagonal Gallium Telluride on Silicon

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
Two‐stage amorphization as a function of annealing temperature of continuous, strain‐free, high‐crystalline‐quality 2D hexagonal gallium telluride on silicon obtained by van der Waals epitaxy. Controlling crystal quality during epitaxial growth is essential for the advancement of novel materials with industrial relevance.
Andrea Pianetti, Stefano Cecchi, Michael Hanke, Jonathan J. Finley, Fabrizio Arciprete, Raffaella Calarco, Eugenio Zallo   +6 more
wiley   +1 more source

Epitaxy of Emerging Materials and Advanced Heterostructures for Microelectronics and Quantum Sciences. [PDF]

Small Methods
Lee Y, Choi SH, Kim H, Yoo J.
europepmc   +1 more source

Study on N-polar gallium nitride growth by tri-halide vapor phase epitaxy

, 2019
直 竹川
openalex   +1 more source

Indium Gallium Arsenic Phosphide-Based Optoelectronics Grown By Gas Source Molecular Beam Epitaxy

, 2017
G.-J. Shiau
openalex   +1 more source

Scalable Synthesis of Ultrathin Silica Nanosheets for Applications in Thermal‐Management Aerogels and Flexible Composite Films

Rare Metals, EarlyView.
ABSTRACT Silica nanosheets (SiO2 NSs) hold great promise for advanced thermal protection applications because of their exceptional thermal and chemical stability. However, their development has been hindered by challenges in scalable synthesis and structural integration for specialized applications.
Qun‐Yao Yuan, Yuan‐Fan Gu, Rong‐Rong Cheacharoen, Jie Zhao   +3 more
wiley   +1 more source

SIMS Investigation of Al Diffusion Across Interfaces in AlGaN/GaN and AlN/GaN Heterostructures. [PDF]

Nanomaterials (Basel)
Laifi J, Hasaneen MF, Bchetnia A.
europepmc   +1 more source

Growth Conditions and Interfacial Misfit Array in SnTe (111) films Grown on InP (111)A Substrates by Molecular Beam Epitaxy [PDF]

Qihua Zhang, Maria Hilse, Wesley Auker, Jennifer L. Gray, Stephanie Law   +4 more
openalex   +1 more source

Tantalum‐Driven Interfacial Reconstruction Enables Ultra‐Low Contact Resistance in TiAlTa/Au GaN HEMTs

Rare Metals, EarlyView.
ABSTRACT The transformative potential of gallium nitride high electron mobility transistors (GaN HEMTs) in advancing carbon‐neutral power systems remains bottlenecked by contact resistance (Rc) at the metal–semiconductor (M‐S) interface, a critical determinant of switching losses and frequency response.
Ji‐Zhou Zhang, Xiao‐Yue Liu, Te Xu, Jiang‐Wen Wang, Yuan‐Hong Shi, Shi‐Dai Tian, Xiang Zhang, Wei‐Guo Hu, Jun‐Yi Zhai   +8 more
wiley   +1 more source

Epitaxial Growth of β‑Ga₂O₃ Thin Films on α‑Al₂O₃ Substrates via Two-Step Metal-Organic Chemical Vapor Deposition: Influence of Growth Temperature on Crystallinity and Interface Formation. [PDF]

ACS Omega
Chen WC, Wang WL, Chiu KA, Chen HP, Lin YW, Yin CE, Chang L, Chen FZ.   +7 more
europepmc   +1 more source

Residual Al Adatoms Driven Epitaxy of AlGaN QWs for High‐Performance UV LEDs [PDF]

Tai Li, Zhaoying Chen, Tao Wang, Wei Luo, Renchun Tao, Z X Yuan, Tongxin Lu, Yucheng Guo, Ye Yuan, Shangfeng Liu, Junjie Kang, Ping Wang, Bowen Sheng, Fang Liu, Qi Wang, Shengqiang Zhou, Bo Shen, Xinqiang Wang   +17 more
openalex   +1 more source